dielectric interfaces
Electrolytes at spherical dielectric interfaces
... and dielectric constant ⑀ ⬘ that is immersed in a continuous medium of dielectric constant ⑀ containing dis- solved ...planar dielectric interfaces 19–21 or the potential of mean force between ...
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Bonding constraint-induced defect formation at Si-dielectric interfaces and internal interfaces in dual-layer gate dielectrics
... internal dielectric interfaces between SiO 2 and alternative high-K dielectric ...high-K dielectric is reduced by the dielectric constant ...
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Interfacial strain-induced self-organization in semiconductor dielectric gate stacks. II. Strain-relief at internal dielectric interfaces between SiO2 and alternative gate dielectrics
... systems, interfaces between: 共 i 兲 SiO 2 and 共 ii 兲 ZrO 2 , HfO 2 , and Zr and Hf silicate alloys exhibit a strain-induced self-organization after annealing to temperatures of ⬃ 600– 800 °C producing a diphasic ...
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Anisotropic Bond Model of Nonlinear Optics and Applications to Silicon and Silicon-Dielectric Interfaces.
... The simplified bond-hyperpolarizibility model (SBHM) of SHG was recently de- veloped by Powell, Wang, and colleagues. The significant advantage here is that the entire theory of NLO is formulated at the atomic level, ...
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Three-Dimensional Electromagnetic Diffraction by a Slot System with Parallel Plane Dielectric Interfaces
... plane interfaces between dielectrics and ...parallel dielectric interfaces independently, one from the other, which essentially simplify the total solution of diffraction ...
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Performance enhancement of Ionic structure in liquids confined by dielectric interfaces (A nanoconfinement framework)
... As described above, most of the parallel programming techniques applied to simulations and science applications are focused on pure MPI, pure OpenMP and hybrid OpenMp- MPI programming models. Moreover, hybrid techniques ...
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Husimi functions at dielectric interfaces: Inside outside duality for optical systems and beyond
... In this paper we introduce four Husimi representations H j inc,em of the wave function, which are appropriate quasiprobabilities at dielectric interfaces. They correspond to the intensity I j inc,em = H j ...
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Photoemission investigation of the electronic properties of Ga-face GaN (0001)-dielectric interfaces
... Currently, GaN-based heterostructure devices are based on GaN thin films grown on sapphire or silicon carbide substrates. Selected GaN wafer technologies require the removal of the substrate from the GaN for device ...
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Simplified bond-hyperpolarizability model of second harmonic generation: Application to Si-dielectric interfaces
... The wavelength dependencies of the real parts of the non- zero contributions all follow essentially the same trend, de- creasing monotonically with increasing wavelength. We con- sider first the back bonds, for which ...
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Suppression of boron transport out of p(+) polycrystalline silicon at polycrystalline silicon dielectric interfaces
... In addition, the B-atom blocking capability is improved by performing the 900 °C RTA prior to the deposition of the polycrystalline Si gate electrode as indicated by the C – V data in Fig. 3 共 b 兲 . Annealing of the ...
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Intrinsic limitations on ultimate device performance and reliability at (i) semiconductor-dielectric interfaces and (ii) internal interfaces in stacked dielectrics
... bonded to the Si atoms at the Si–dielectric interface. In ad- dition for a 90 s plasma-nitridation treatment 9,14 the nitrogen atom concentration of 7.5 ⫾ 0.5 ⫻ 10 14 cm ⫺ 2 is equivalent to one nitrogen atom per ...
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Infrared and dielectric properties of nickel aluminium ferrite
... ferrites. Dielectric parameters have high value at low frequency due to the fact that on the application of alternating electric field electrons pile up at poorly conducting grain boundary as they reach ...the ...
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A new framework for ubiquitous context-aware healthcare applications
... SCFs Interfaces, called Extended Set of SCFs Interfaces, integrates not only the core network SCFs Interfaces but also the Sensor Networks SCFs Interfaces that enable the ubiquitous healthcare ...
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Unit IV.pdf
... Interfaces can be used to declare a set of constants that can be used in different classes. This is similar to creating header files in C+ + to contain a large number of constants. Since such interfaces do ...
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Interfaces
... • Consider making an abstract to hold these common variables. – Include set/get methods too[r] ...
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Interfaces
... In addition to default methods, you can define static methods in interfaces. (A static method is a method that is associated with the class in which it is defined rather than with any object. Every instance of the ...
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Improving the Dielectric Properties of High Density Polyethylene by Incorporating Clay Nanofiller
... the dielectric properties of polyethylene (PE) ...the dielectric properties, such as dielectric constant, dissipation factor, dielec- tric breakdown, and insulation resistance, of the prepared ...
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Bone like Material, Synthesis, Optimization and Characterization
... CP with HAp phase is one of most bone-like materials that similar to the inorganic part of human bone [8-9]. About 70% of the mass of living bone has chemical constitution of HAp. In addition HAp implant usually shows ...
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Growth, Structural, Optical, Mechanical and Dielectric Characterization of Diammonium Hydrogen Phosphate (DAHP) Single Crystals
... Second harmonic generation (SHG) for the material of this work was confirmed using Nd: YAG laser. The UV-Visible spectrum show that the grown crystals have wide optical transparency in the entire visible region. The ...
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Ferroelectric BaTiO3/SrTiO3 multilayered thin films for room temperature tunable microwave elements
... (BTO/STO) heterostructures with artificial multilayer and/or superlattice structures have achieved a great en- hancement on physical properties compared to the single- crystal epitaxial films of BTO, STO, and BST ...
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