GaAs-based quantum well lasers
A physical model of quantum cascade lasers: Application to GaAs, GaN and SiGe devices
... the mechanism of double-phonon resonance depopulation (2LO QCL) of the lower laser level, (success- fully implemented in continuous wave room-temperature InP-based mid-infrared QCL [11, 32]), has been grown at the ...
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Ultrasmall microdisk and microring lasers based on InAs/InGaAs/GaAs quantum dots
... region based on InAs/InGaAs/GaAs quantum dots emitting around ...of quantum dots providing high confinement energy both for electrons and ...
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Influence of doping density on electron dynamics in GaAs/AlGaAs quantum cascade lasers
... set. Based on the space and energy shift invariance, they were afterwards used to create the states of all other ...are based on electron-phonon, electron-electron, and electron- impurity ...
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Photoelectric Properties of InAs/GaAs Quantum Dot Photoconductive Antenna Wafers
... InAs/GaAs quantum dot photoconductive antenna in the wavelength region between 1140 nm and 1250 nm at temperatures ranging from 13 K to 400 K is ...with quantum dot semiconductor lasers to ...
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Gain optimization in optically pumped AlGaAs unipolar quantum-well lasers
... laser, based on intersubband transitions in quantum wells (QWs) by Kazarinov and Suris in 1971 [1], there has been considerable research effort in this ...unipolar lasers have been proposed, and some ...
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Stimulated Emission in AlxGa1-xAs -GaAs Single and Multiple Quantum Well Heterostructure.
... Molecular beam epitaxy (MBE) is a term used to denote the epitaxial growth of compound semiconductor films by a process involving the reaction of one or more thermal molecular beams with a crystalline surface under ...
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Self-consistent solutions to the intersubband rate equations in quantum cascade lasers: Analysis of a GaAs/AlxGa1-xAs device
... cascade lasers have been the focus of much research since they were developed in ...been based on a InGaAs/AlInAs structure so that the growth could be lattice matched to InP ...been based on a ...
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Linewidth enhancement factor and modulation bandwidth of lattice matched 1 5 micron InGaAsN/GaAs quantum well lasers
... InGaNAs quantum well materials are determined from experimental results published in the ...semiconductor lasers which have spectrally and spatially more stable modal properties under high-speed ...
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Optically pumped intersublevel midinfrared lasers based on InAs-GaAs quantum dots
... m GaAs substrate with an Al mirror deposited on its bottom, and the quantum-dot active layer grown on its top would then be covered by another 2 m of GaAs spacer be- fore depositing the upper Al ...
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Electrically pumped continuous-wave III–V quantum dot lasers on silicon
... nm GaAs spacer layers of the last SLSs, the dislocation density is reduced to the order of 10 5 cm -2 beyond the measurement capability of .... Based on the developed template, a standard 5- layer QD laser ...
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Anisotropic in plane spin splitting in an asymmetric (001) GaAs/AlGaAs quantum well
... In general, the spin splitting of electron or hole at B > 0 in semiconductor is described by a finite Zeeman split- ting energy and characterized by the effective g-factor, which is necessary for the spin manipulation ...
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Crystallographic Orientation-dependent Optical Properties of InGaSb/GaAs Quantum Well Architecture
... The growth of crystal orientated QW structure except [0 0 1] orientation is efficiently attainable by modernized crystal growth techniques such as molecular beam epitaxy and metal- organic chemical vapor deposition. The ...
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Experimental verification of the very strong coupling regime in a GaAs quantum well microcavity
... The diamagnetic shifts of both polariton branches were measured at several different detunings for both microcavity samples. The total shifts at 5T are summarized in Fig. 4(a) for the 1 QW-sample and in Fig. 4(b) for the ...
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Temperature and electron density dependence of spin relaxation in GaAs/AlGaAs quantum well
... or well above ...asymmetric GaAs QW have been presented in Figure ...asymmetric GaAs/AlGaAs QWs is shown in Figure ...symmetric GaAs/AlGaAs QW is in general longer than the asym- metric one at ...
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A study of photomodulated reflectance on staircase like, n doped GaAs/Alx Ga1−xAs quantum well structures
... Experimental results on reflectivity (R), PL, and PR spectra of ANA14 and IQE14 structures are given in Figure 3. Calculated PR spectra are also included in the figure. The R spectra are given just for information and ...
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A THEORETICAL EVALUATION OF VARIATION OF BINDING ENERGY OF THE GROUND STATE FOR A DONOR IN QUANTUM WELL IN THE PRESENCE OF TITLED MAGNETIC FIELD
... square well potential under the influence of externally applied titled magnetic field is obtained by using a variational ...of GaAs quantum well were studied as a function of the well ...
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Optical Gain and Confinement in Gaas/Algaas Structure Quantum Well Lasers
... a quantum well structure, the two dimensional nature of the density of states changes the gain ...a quantum well is constant in the whole ...as well, causing a considerable ...
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Ultra High Purity Gallium and Indium for Emerging Iii-V Epitaxial Nanoelectronics Materials Technologies: An Overview
... (HMETs), lasers, light emitting diodes (LEDs), detectors, solar cells ...of GaAs and InP devices coupled with lattice match and tailorable material properties of GaAs ternary and quaternary ...
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MBE grown GaAsBi/GaAs multiple quantum well structures : structural and optical characterization
... rst quantum well (QW). The nominal well thickness in every sample was 8 ...each well/barrier interface for 1 min to allow excess Bi ...
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Reversed Effects of Quantum Well Numbers and Temperature on Optical Power and Wavelength of a Designed Ultraviolet Semiconductor Laser Based on GaN/InGaN
... At higher temperatures, carrier velocity and lattice scattering increase more and more. Therefore carriers hit more to each other and to lattice atoms. It staves off their fast moving so that their mobility falls ...
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