GaAs quantum-well laser
Phonon-Assisted Population Inversion of a Single InGaAs/GaAs Quantum Dot by Pulsed Laser Excitation
... InGaAs/GaAs quantum dots embedded in the intrinsic region of an n-i-Schottky diode ...Ti:sapphire laser with repetition rate of ...the quantum dot under an applied electric-field, leading to a ...
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Phonon-Assisted Population Inversion of a Single InGaAs/GaAs Quantum Dot by Pulsed Laser Excitation
... a laser-field, the exciton-phonon interaction leads to non-exponential pure-dephasing of the excitonic dipole, as observed in time-resolved four-wave mixing experiments ...strong laser, both dressed states ...
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Room temperature passive mode locked laser based on InAs/GaAs quantum dot superlattice
... In this communication, we report on a room- temperature study a ten-layer system of tunnel-coupled In(Ga)As/GaAs QD. As shown in [7,8], the structure with ten tunnel-coupled layers of In(Ga)As/GaAs QDs ...
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Photoelectric Properties of InAs/GaAs Quantum Dot Photoconductive Antenna Wafers
... In conclusion, we presented a detailed study of the IR photoconductivity in self-assembled InAs/GaAs quantum dots. A compact semiconductor QD laser was used as a narrowband coherent pump source. We ...
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The Role of Parameter Variations in the Static and Dynamic Characteristics of Quantum Dot Lasers by Using Circuit-Level Modeling
... the laser behaviors and it is found that for a self-assembled InGaAs-GaAs quantum dot Laser, the laser coverage factor increment can increases the laser threshold current, the ...
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Excitation energy dependent nature of Raman scattering spectrum in GaInNAs/GaAs quantum well structures
... Micro-Raman spectra (100 to 3200 cm −1 ) of the samples were recorded using a Jasco NRS 3100 micro-Raman spectrometer (Jasco Corporation, Tokyo, Japan), equipped with 532 nm (green) and 785 nm (red) diode lasers, whereas ...
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Observation of the transition from lasing driven by a bosonic to a fermionic reservoir in a GaAs quantum well microcavity
... The effect of the in-plane electric field on PL is illustrated in Fig. 3(c) which shows line spectra at 𝑘 ∥ = 0 for increasing bias at a constant excitation power of 21.4mW when polariton and photon lasers are comparably ...
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Crystallographic Orientation-dependent Optical Properties of InGaSb/GaAs Quantum Well Architecture
... A quantum well (QWs), literally a potential well with only discrete energy values, comprised of Gallium Arsenide (GaAs) and of related III-V materials exhibits appreciable current conducting ...
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Effects of an intense, high frequency laser field on bound states in Ga1 − xInx Ny As1 − y/GaAs double quantum well
... GaInNAs/GaAs quantum well (QW) lasers have been attracting significant scientific interest mainly due to their applications in 1.3- or 1.55-μm optical fiber communica- tion [6-12]. These lasers are ...
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Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1 3 μm Quantum Dot Lasers
... 1.3-μm quantum dot (QD) laser was de- veloped; however, there has been no distinct development or progress on quantum dot growth since then up till ...1.3-μm quantum dot laser has once ...
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Temperature-dependent modulated reflectance of InAs/InGaAs/GaAs quantum dots-in-a-well infrared photodetectors
... The PR/PT spectra were measured using a double- monochromator system, as depicted in Fig. 1, which pro- vided better signal-to-noise ratios under measurement condi- tions (compared to the conventional use of a low-pass ...
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The Capacitance Modulated by the Convolution between Optical and Electrical Signals Using the GaAsN/GaAs Quantum Well
... Nd laser at a wavelength of 532 nm, and the admittance spectroscopy was detected using an Agilent HP4194A impedance ...pulsed laser diode with a wavelength of 905 nm ...
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Anisotropic in plane spin splitting in an asymmetric (001) GaAs/AlGaAs quantum well
... 8-nm-wide GaAs quantum well, the other sloping barrier grown with content of Al changing from ...5-nm GaAs layer to avoid the oxidation of ...Ti-sapphire laser (approximately 120 fs, 76 ...
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MBE grown GaAsBi/GaAs multiple quantum well structures : structural and optical characterization
... rst quantum well (QW). The nominal well thickness in every sample was 8 ...each well/barrier interface for 1 min to allow excess Bi ...
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Ultrashort electromagnetic pulse control of intersubband quantum well transitions
... double GaAs/AlGaAs quantum well structure, taking into account the ultrashort nature of the applied field, and show that high-efficiency population inversion is possible for specific pulse ...
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... Semiconductor lasers have become ubiquitous de- vices in today’s modern high-tech society. They can be found in familiar devices such as bar-code scanners used in supermarkets, laser printers in offices, compact ...
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Observation of microwave induced resistance oscillations in a high mobility two dimensional hole gas in a strained Ge/SiGe quantum well
... More careful examination of the data in Fig. 3(a) also reveals an extra photoresistance feature which occurs close to the cyclotron resonance (cf. ↓). While the exact origin of this feature is unclear at this point, its ...
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Electron Microscopy Studies of Non Local Effects' Impact on Cathodoluminescence of Semiconductor Laser Structures
... Spatially and spectrally resolved cathodoluminescence (CL) studies performed in a scanning electron microscope (SEM) or a scanning transmission electron microscope (STEM) are widely applied to determine the luminescence ...
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Decoherence and Entanglement Simulation in a Model of Quantum Neural Network Based on Quantum Dots
... of GaAs, QDs for quantum neural networks were first proposed by ...of quantum dot molecules interacting with each other only by means of their shared phonon ...achievable quantum dot based QNN ...
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Picosecond acoustics in single quantum wells of cubic GaN/(Al,Ga)N
... semiconductor quantum wells (QWs) ...nitride quantum wells are performed on multiple QWs based on wurtzite (hexagonal) h -GaN and its ...or GaAs-based phononic chips, thus, allowing us to perform ...
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