GaAs substrate
Magnetotransport in an aluminum thin film on a GaAs substrate grown by molecular beam epitaxy
... In conclusion, we have performed magnetotransport measurements on an aluminum thin film grown on a GaAs substrate. A crossover from electron- to hole- dominant transport can be inferred from both longitudi- ...
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Influence of GaAs Substrate Orientation on InAs Quantum Dots: Surface Morphology, Critical Thickness, and Optical Properties
... the GaAs substrate. As mentioned earlier, different oriented substrate surfaces are characterized by different chemical potentials thus affecting the kinetics of adsorp- tion, migration, desorption, ...
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Low bandgap GaInAsSb thermophotovoltaic cells on GaAs substrate with advanced metamorphic buffer layer
... on GaAs with IMF arrays have been ...on GaAs substrates using IMF techniques but exhibited an EQE of only ~ 40% ...on GaAs substrate for TPV ...
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Surface morphology abd optical properties of self assembled in GaAs nanostructures grown GaAs substrate using MOVCD
... From Figure 2e, it can be seen that sample with Ino.sGao sAs grown for 4.0 seconds shows almost a similar surface where growth of islands with non-uniform size distribution takes place..[r] ...
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Structural Analysis of Highly Relaxed GaSb Grown on GaAs Substrates with Periodic Interfacial Array of 90° Misfit Dislocations
... the substrate is lapped down to *10 lm and ion milled to 30 nm, resulting in a net thickness of 45 nm that includes the 15-nm IMF-grown GaSb epitaxial ...on GaAs substrate for comparison with the ...
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Magnetophotoluminescence study of the influence of substrate orientation and growth interruption on the electronic properties of InAs/GaAs quantum dots
... the explanation of this large increase in , we refer to our earlier work, 2 where for InAs QDs grown on a 共 311 兲 B GaAs substrate, it was found that the exciton is not completely confined in the dot for ...
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Lateral Ordering of InAs Quantum Dots on Cross hatch Patterned GaInP
... a GaAs substrate has been shown to be promising in ordering InAs QDs ...a GaAs substrate. Non-relaxed GaInP layers grown on GaAs substrates have been success- fully used as templates ...
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Atomic column scanning transmission electron microscopy analysis of misfit dislocations in GaSb/GaAs quantum dots
... the GaAs substrate) leads to the intensity ...the GaAs capping layer, which is something ...the substrate when the critical thickness is ...
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Electrical and Optical Properties of Au Catalyzed GaAs Nanowires Grown on Si (111) Substrate by Molecular Beam Epitaxy
... single-crystal GaAs is used as a homogeneous substrate for growing GaAs semiconductor nanowires [11, ...single-crystal GaAs substrate is expensive and difficult to integrate into the ...
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A Photomixer Driven Terahertz Dipole Antenna with High Input Resistance and Gain
... A photomixer driven THz antenna has been considered in the presence of a thick GaAs substrate. A considerably large input resistance of ∼ 3 . 3 kΩ has been achieved by inserting an isolating layer between ...
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III-V semiconductor nanowire for solid oxide fuel cells
... Solid oxide fuel cells (SOFC) have much promise as efficient devices for the direct conversion of the energy stored in chemical fuels into electricity. The development of highly robust SOFC that can operate on a range of ...
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High Performance V-Band GaAs Low Noise Amplifier with Modified Coplanar Waveguide EBG Transmission Lines Technology
... The values of the required inductances in the circuit are smaller than those provided by standard spiral inductors and we have therefore opted for the TLine approach. Conventional coplanar microstrip, and grounded ...
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Bipolar Effects in Photovoltage of Metamorphic InAs/InGaAs/GaAs Quantum Dot Heterostructures: Characterization and Design Solutions for Light Sensitive Devices
... the GaAs substrate and related interfaces on the photo- electric spectra of InAs/InGaAs/GaAs QD structures have not been explored in ...the substrate influence, the photoresponse is affected ...
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Fabrication of Nanostructured Objects by Thermal Vacuum Deposition of Ge Films onto (100)GaAs Substrates
... non-annealed GaAs substrate (sample #4) turns out to be amorphous as well (though with some portion of crystalline phase) and the film deposited at the same temperature on non-annealed Si substrate ...
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Photoelastic properties of zinc blende (AlGa)N in the UV: picosecond ultrasonic studies
... E 0 are quite close to the values measured using picosecond ultrasonics. A more significant difference is observed for the extinction coefficients κ : the values of κ measured by ellipsometry are, in general, higher as ...
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Single photon emission from single InGaAs/GaAs quantum dots grown by droplet epitaxy at high substrate temperature
... Torr beam equivalent pressure for a relatively short time to crystallize the indium droplets into InGaAs QDs. The time for QD formation was determined by RHEED. The QDs were capped with a 50-nm GaAs barrier layer ...
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The Simultaneous Determination of Thickness and Complex Refractive Index of a Thin Film on a Substrate
... Therefore, in this thesis I focus my attention on simultaneously extracting the thickness (equivalent to the growth rate) and complex refractive index (equivalent to the composition) of thin layers deposited on a ...
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Surface morphology and lateral distribution of self-assembled in0.5Ga0.5AS nanostructures grown on gaAs (100) substrate
... have different size, density and uniformity and can be grouped into small and large dots. The size of small dots decreases with steadily increasing of the buffer layer thickness. Surface morphology was influenced by the ...
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Dynamics of Optically Generated Carriers in Si (100) and Si (111) Substrate Grown GaAs/AlGaAs Core Shell Nanowires
... in GaAs/AlGaAs CSNWs grown on Si (100) and Si (111) substrates were ...measure GaAs core’s carrier recombination ...of GaAs generates current surge, which is associated with the drift of photoexcited ...
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Fabrication and Characteristics of High Quality AlGaAs Film Grown on Al 2O3 Substrate
... transparent substrate in order to fabricate higher efficiency optical devices ...absorbing substrate with a transparent substrate through a post-wafer bonding process ...
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