(GaIn)As/Ga(PAs) multiple quantum wells
Optical and Structural Characterization of InGaN/GaN Multiple Quantum Wells by Epitaxial Lateral Overgrowth
... InGaN/GaN multiple quantum wells (MQWs) grown by metal- organic vapor-phase epitaxy (MOVPE), epitaxial lateral overgrowth (ELO) on a patterned sapphire substrate was employed and the MQWs were ...
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Effect of hydrogen treatment temperature on the properties of InGaN/GaN multiple quantum wells
... InGaN/GaN multiple quantum wells (MQWs) were grown with hydrogen treatment at well/barrier upper interface under different temperatures. Hydrogen treatment temperature greatly affects the ...
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Surface Morphology Evolution Mechanisms of InGaN/GaN Multiple Quantum Wells with Mixture N2/H2 Grown GaN Barrier
... the quantum well (QW) can allevi- ate indium atom desorption to obtain high indium content, these methods also deteriorate the optical performance of InGaN/GaN multiple quantum wells (MQWs) by ...
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Strain Controlled Recombination in InGaN/GaN Multiple Quantum Wells on Silicon Substrates
... resents the PL lifetime. It is worth noted that not all decay curve can be perfectly fitted by above single expo- nential decay function. This has been widely discussed by several groups [31–34]. A reasonable assumption ...
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Intersubband absorption properties of high Al content Alx Ga1−xN/GaN multiple quantum wells grown with different interlayers by metal organic chemical vapor deposition
... content AlGaN/GaN MQW layer and the GaN tem- plates. The biaxial tensile strain in the MQW layer accu- mulates in the process of the MQW layering, grows thicker, and finally leads to crack formation [15,16]. Moreover, ...
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Optical and spin properties of localized and free excitons in GaBi ₓAs₁-ₓ /GaAs multiple quantum wells
... III- V dilute bismide semiconductor material has attracted much attention in recent years due to its potential applications for near infrared wavelength photonics and spintronics [1-20]. The incorporation of Bi has been ...
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Photoreflectance and surface photovoltage spectroscopy of beryllium-doped GaAs/AlAs multiple quantum wells
... AlAs multiple quantum well 共QW兲 structures designed for sensing terahertz 共THz兲 ...the quantum index has shown that an average half monolayer well width fluctuations is mostly predominant broadening ...
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Recombination Pathways in Green InGaN/GaN Multiple Quantum Wells
... The schematic picture of the PL process in this green MQW LED sample has been done to illustrate the above measured results systematically. As seen in Fig. 7, the electrons in the valence band are pumped onto conduc- ...
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Aperiodic Fibonacci Series Multiple Quantum Wells Lead to Topological Quantum Computation
... chain multiple quantum wells structures ...exotic quantum phases of matter that host quasiparticles with non-Abelian anyons partially due to the possibility of topological quantum ...
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Spin relaxation and carrier recombination in GaInNAs multiple quantum wells
... Spin relaxation in semiconductors, i.e. the mechanisms by which the electron- or hole-spin flips from an ’up’ to a ’down’ state or vice versa (detailed in chapter 2), is an interesting topic as it delves into the physics ...
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Phosphor Free Apple White LEDs with Embedded Indium Rich Nanostructures Grown on Strain Relaxed Nano epitaxy GaN
... Nanostructures and photonic crystals have been created by deposition into patterned substrates produced by conventional lithographic approaches such as e-beam lithography, interference lithography or X-ray lithography ...
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Efficiency of True-Green Light Emitting Diodes: Non-Uniformity and Temperature Effects
... of quantum well growth temperature on the recombination efficiency of InGaN/GaN multiple quantum wells that emit in the green and blue spectral ...
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Aperiodic and Asymmetric Multiple Quantum Well Photonic Devices: A Novel Transfer Matrix Based Model
... and Multiple Quantum Wells (MQW)s in particular, are gaining much importance due to their potential use in applications ranging from optoeltronics to high speed switching [1- ...of quantum ...
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Linewidth enhancement factor and modulation bandwidth of lattice matched 1 5 micron InGaAsN/GaAs quantum well lasers
... the large refractive index difference in this AlAs-GaAs based system makes it possible to fabricate monolithic Bragg reflectors with a small number of mirror pairs. For use as practical laser systems, a number of key ...
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Transport anisotropy in Ge quantum wells in the absence of quantum oscillations
... Ge quantum well revealed strong transport anisotropy in the quantum Hall regime when the magnetic field was tilted away from the sample normal ...that quantum oscillations are no longer ...
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Quantum interference effects in p Si1−xGex quantum wells
... This investigation was made possible by applying strong magnetic fields, which enabled SdHOs to be recorded in the region of small quantum numbers. By this means we could investigate the behavior of the ...
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Temperature Dependent High Speed Dynamics of Terahertz Quantum Cascade Lasers
... The exemplar laser modeled in this paper is a bound-to- continuum (BTC) type QCL, a device that is particularly chal- lenging to model and optimize due to the relatively large number of quantum-confined subbands ...
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Bismuth Quantum Dots in Annealed GaAsBi/AlAs Quantum Wells
... of quantum confinement effects in Bi-based ...The quantum size effect in bismuth nanoparticles was for the first time studied by electron energy loss spec- troscopy [32], and the semi-metal to semiconductor ...
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Quantum Conductance Staircase of Edge Hole Channels in Silicon Quantum Wells
... the quantum conductance staircase as distinguished from the internal ...with quantum point contact (QPC) inserted as a result of the local disorder in the δ-barriers heavily doped with boron (Figure ...the ...
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Quantum Supercurrent Transistors in Silicon Quantum Wells Confined by Superconductor Barriers
... Figure 1. A scheme of self-assembled silicon quantum wells (Si-QWs) obtained by varying the thickness of the oxide overlayer prepared on the Si (100) wafer. The white and black balls label the ...
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