GaN/InGaN multiple quantum wells
Effect of hydrogen treatment temperature on the properties of InGaN/GaN multiple quantum wells
... The InGaN/GaN blue emission MQW structures were grown on (0001) planar sapphire substrates by metal- organic chemical vapor deposition ...undoped GaN layer, and six pairs of InGaN/GaN ...
7
Optical and Structural Characterization of InGaN/GaN Multiple Quantum Wells by Epitaxial Lateral Overgrowth
... the InGaN well, keeping the other conditions exactly the ...the InGaN well, the indium content of which was approximately 10%, was stronger compared with that on the unmasked ...the InGaN well was ...
6
Strain Controlled Recombination in InGaN/GaN Multiple Quantum Wells on Silicon Substrates
... resents the PL lifetime. It is worth noted that not all decay curve can be perfectly fitted by above single expo- nential decay function. This has been widely discussed by several groups [31–34]. A reasonable assumption ...
7
Finite-Difference Time-Domain Simulations on Overgrown InGaN/GaN Multiple Quantum Well (MQW) Light Emitting Diode (LED).
... on GaN (wurtzite) nanostructures because the facets of GaN nanostructures expose their semi-polar and non-polar planes for the active layer ...Specifically, InGaN/GaN multiple ...
86
Cathodoluminescence studies of chevron features in semi-polar (11-22) InGaN/GaN multiple quantum well structures
... Epitaxial overgrowth of semi-polar III-nitride layers and devices often leads to arrowhead-shaped surface features, referred to as chevrons. We report on a study into the optical, structural, and elec- trical properties ...
6
Temporally and spatially resolved photoluminescence investigation of (11(2)over-bar2) semi-polar InGaN/GaN multiple quantum wells grown on nanorod templates
... Figure 1(a) gives the time-integrated PL (TIPL) spectra of all samples measured under identical conditions at 7 K, showing that the peak emission wavelength increases from 425 to 505 nm with increasing the indium ...
6
Reduction of Polarization Field Strength in Fully Strained c Plane InGaN/(In)GaN Multiple Quantum Wells Grown by MOCVD
... c-plane InGaN/(In)GaN multiple quantum well (MQW) structures grown on sapphire substrate by metal-organic chemical vapor deposition are investigated in this ...the quantum wells ...
6
Optical properties of GaN nanorods containing a single or multiple InGaN quantum wells
... InGaN/GaN nanorod light emitting diodes (LEDs) have recently attracted attention owing to the possibility that such nanostructures may accommodate strain to enhance the internal quantum efficiency by ...
5
Phosphor Free Apple White LEDs with Embedded Indium Rich Nanostructures Grown on Strain Relaxed Nano epitaxy GaN
... bridge GaN template, which includes threading dislocation reduction and strain relaxation in subsequent InGaN/GaN MQWs or InN quantum dots grown [22, ...of InGaN/GaN LEDs ...
7
Recombination Pathways in Green InGaN/GaN Multiple Quantum Wells
... of InGaN well by absorbing the incident UV photons, and then parts of excited carriers relax to the states near the bandgap edge by releasing excess en- ergy as ...in InGaN well layers is low because of the ...
6
Analysis of the stability of InGaN/GaN multiquantum wells against ion beam intermixing
... InGaN/GaN multiple quantum wells (MQWs) are the basis of many modern optoelectronic devices, including bright light emitting diodes, laser diodes, light displays, solar cells, ...
17
Efficiency of True-Green Light Emitting Diodes: Non-Uniformity and Temperature Effects
... of quantum well growth temperature on the recombination efficiency of InGaN/GaN multiple quantum wells that emit in the green and blue spectral ...
17
Surface Morphology Evolution Mechanisms of InGaN/GaN Multiple Quantum Wells with Mixture N2/H2 Grown GaN Barrier
... of InGaN layer [11, ...the quantum well (QW) can allevi- ate indium atom desorption to obtain high indium content, these methods also deteriorate the optical performance of InGaN/GaN ...
8
Quantum well engineering in InGaN/GaN core-shell nanorod structures
... in quantum well thickness for semi-polar [13] and the fact that the changed InN incorporation may make the growth conditions less optimised for one of the faces (in this case the ...
7
Electronic and Photonic Band Engineering for Novel Optoelectronic and Nanophotonic Devices
... with the commercialization of candela class GaN-based blue LEDs in 1993. The first yel- low/amber LED based on InGaN have been reported in 1995 [47]. Subsequently, the most commercially significant ...
115
Influence of stress on optical transitions in GaN nanorods containing a single InGaN/GaN quantum disk
... CL hyperspectral imaging and Monte Carlo simulations of the electron excitation volume have been performed on an InGaN SQD embedded in GaN nanorods formed by post- growth nanoimprint lithography and ICP ...
8
Fabrication of vertical GaN/InGaN heterostructure nanowires using Ni Au bi metal catalysts
... the InGaN layers in our CVD sys- tem. For this study, the InGaN shell is deposited to a thickness of 50 nm on the GaN nanowires for the con- venience of the compositional analysis of the shell by TEM ...
6
Ultra High Purity Gallium and Indium for Emerging Iii-V Epitaxial Nanoelectronics Materials Technologies: An Overview
... In MOVPE, a major replacement effort for the highly toxic As- and P- sources and perfection of safety issues has been underway for some time, but hydride sources remain dominant due to cost considerations. Oxygen ...
16
Intersubband absorption properties of high Al content Alx Ga1−xN/GaN multiple quantum wells grown with different interlayers by metal organic chemical vapor deposition
... the GaN/AlGaN heterostructure will surely influence ISB intensity since ISB absorption strongly relies on the net carrier density in the ...doped GaN templates can achieve high electron- sheet ...
6
Cathodoluminescence hyperspectral imaging of trench-like defects in InGaN/GaN quantum well structures
... This work studies the luminescence from trench defects of different types located side by side within a small region as seen in figure 3, with marked changes to the behaviour of the QWs and links it to structural ...
7