GaN light emitting diodes
Planar micro- and nano-patterning of GaN light-emitting diodes : guidelines and limitations
... of GaN light-emitting diodes can be patterned by etch-free current aperturing methods which exploit the thin and highly resistive nature of the p-doped layer in these ...
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Influence of helium ion bombardment on the optical properties of ZnO nanorods/p GaN light emitting diodes
... ZnO NRs were grown on p-GaN substrates by the vapor-liquid-solid (VLS) mechanism. Gold nano parti- cles are used as catalyst for the growth. A thin film of gold with thickness of approximately 4 nm was depos- ited ...
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Electroluminescence of ordered ZnO nanorod array/p GaN light emitting diodes with graphene current spreading layer
... The highly ordered ZnO nanorod arrays on the p-GaN substrate were then used to construct LED devices with graphene as the current spreading layer, and the sche- matic structure of the device is illustrated in ...
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Enhanced performance of photonic crystal GaN light emitting diodes with graphene transparent electrodes
... The GaN-based light-emitting diodes (LED) have re- cently attracted considerable interest because of advan- tages in low energy consumption, high brightness, and long ...low light ...
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Beam divergence measurements of InGaN/GaN micro-array light-emitting diodes using confocal microscopy
... InGaN/GaN light-emitting diodes (micro-LEDs) with potential applications from scientific instrumentation to micro-displays has created an urgent need for controlled manipulation of the ...
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Investigation of Nanoscale Photonic Crystal Arrays on Gallium Nitride Blue Light emitting Diodes
... the light intensity, compared with those different ...blue GaN light-emitting diodes with the emitting wavelength of 463 ...
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The origin of the red emission in n ZnO nanotubes/p GaN white light emitting diodes
... ZnO nanostructures grown by low temperature (<100° C) growth techniques such as aqueous chemical growth (ACG) have low crystal quality with lattice and surface defects. The post-growth annealing is an effective tool ...
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Ultraviolet/blue light emitting diodes based on single horizontal ZnO microrod/GaN heterojunction
... p-type GaN layer was grown on a (0001) sapphire sub- strate with hole concentration and mobility of 10 17 cm −3 and 10 cm 2 /V-s, respectively, was used as the hole injec- tion ...p-type GaN film to serve ...
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Substrate Free InGaN/GaN Nanowire Light Emitting Diodes
... The fabricated membrane LEDs were electrically charac- terized in a Janis probe station coupled to a Keithley 2636 source meter. The electrical potential was applied to the bottom metal contact connected to the p-doped ...
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Capability of GaN based micro-light emitting diodes operated at an injection level of kA/cm2
... roughly divided into three categories, including internal nonradiative losses, electron leakage and junction temperature [3]. Many remedies have been reported, such as double heterostructure (DH) active layer [4], ...
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Enhancement in Light Extraction Efficiency of GaN Based Light Emitting Diodes Using Double Dielectric Surface Passivation
... tively passivates the surface of the LED, which not only improves the electrical property of the LED by effectively reducing surface leakage as described before, but also re- duces probability of nonradiative ...
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Novel thin GaN LED structure adopted micro abraded surface to compare with conventional vertical LEDs in ultraviolet light
... the light extraction efficiency, the surfaces of the V-LEDs are abraded to enable extra scattering capability ...ultraviolet light-emitting diodes (NTG-LEDs) that include such designs and were ...
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The fabrication of white light emitting diodes using the n ZnO/NiO/p GaN heterojunction with enhanced luminescence
... The room temperature EL of the fabricated LEDs under forward bias at a constant current of 15 mA is shown in Figure 5. Figure 5a shows the EL response for the n-type ZnO nanorods/p-type GaN-developed LED in the ...
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Fabrication of InGaN/GaN MQWs Vertical Blue Light-Emitting Diodes Using Laser Lift-Off Technique
... thermal annealing system. The thickness of electroplated copper was ~ 150 µm. Before, laser lift-off (LLO) process, the backside of the LED sample (sapphire) was polished for getting smooth surface to avoid the ...
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Growth and Characterization of GaN and AlGaN Thin Films and Heterostructures and the Associated Development and Evaluation of Ultraviolet Light Emitting Diodes
... typical asymmetric, nonlinear behavior. The curves of the annealed samples were also non-linear; however, they were symmetric due to interfacial reactions that have been reported 25 to occur among Ni, Au, and either ...
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Characteristics of GaN-based light emitting diodes with different thicknesses of buffer layer grown by HVPE and MOCVD
... the MOCVD-GaN and HVPE-GaN buffer layers is ∼12 μm and ∼30 μm, respectively, which was estimated by scanning electron microscope (SEM) images and CL mapping of the sample cross-sections. We have noticed ...
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Efficiency improvement of GaN based ultraviolet light emitting diodes with reactive plasma deposited AlN nucleation layer on patterned sapphire substrate
... where L is the EL luminescence, I is the driving current, and P is a constant indicating the contribution of non- radiative recombination to overall recombination bal- ance. A higher value of P constant indicates a ...
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Enhancement of light output power of GaN based light emitting diodes with photonic quasi crystal patterned on p GaN surface and n side sidewall roughing
... guiding light from LED top surface and n-side roughing onto the LED top direction [14,21,24] to increase more light output ...the light emit- ted from LED scattered by top PQC pattern and guided onto ...
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Optoelectronic Properties of GaN Based Light Emitting Diodes with Different Mesa Structures
... lighting-emitting diodes with six mesa struc- tures are ...the GaN/InGaN lighting-emitting diodes can be greatly improved by reducing the current ...cient light-emitting ...
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Growth and Fabrication of GaN/InGaN Violet Light Emitting Diode on Patterned Sapphire Substrate
... violet light emitting diodes (LEDs), emitting at 430 nm, have been grown on conventional single side polished (SSP) and patterned sapphire substrates ...The light output from LED ...
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