high-dose ion implantation
Fabrication of Nanoporous Silicon By Ag+ Ion Implantation
... The first data on a novel technique for p-Si fabrication on silicon wafers combined with AgNPs, which are nucleated and growth inside P-Si walls, using low energy high dose ion implantation ...
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Optimization of ion implantation using trim software for the formation of shallow n+/p junction in germanium substrate
... its high drive current capability along with lower leakage ...involving ion implantation ...of ion implantation parameters such as energy and ...
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Ion implantation of CdTe single crystals
... the dose in the case of Si sample. For dose 6·10 14 1/cm 2 the channeling spectrum is comparable with the spectrum of random ...by high mobility of interstitial Te and enhanced recombination of ...
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InAs Diodes Fabricated Using Be Ion Implantation
... the high temperature processing of InAs stated above; in addition, a large variety of dopants and more intricate doping profiles are ...achievable. Ion implantation of the light group IIa elements, ...
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Chemical Modification of Titanium Nitride Films via Ion Implantation
... With high resolution SEM, the surface morphology, as well as grain size, were ...Al dose, XRD peak of TiN (111) was shifted to a higher ...lower implantation dose, the TiN peak became a little ...
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Tantalum/ Nitrogen and n-type WO3 semiconductor/FTO structures as a cathode for the future of nano devices
... and high-speed thermal printing head as well as thin film ...processing, high resistivity and narrow process window continue to limit the usability of these films as thin film resistors in Silicon IC ...by ...
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The enhanced anticoagulation for graphene induced by COOH+ ion implantation
... + implantation introduced functional carboxyl groups into the surfaces of ...+ implantation could also enable it to exhibit attractive anticoagulation ...the ion implantation in this study is ...
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A preparation approach of exploring cluster ion implantation: from ultra thin carbon film to graphene
... monitoring implantation dose ...from high voltage at decelerated filed, an isolation transformer was introduced to guarantee ...incident ion and the sub- strate. The overall layout, similar to ...
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110GHz fT Silicon Bipolar Transistors Implemented using Fluorine Implantation for Boron Diffusion Suppression
... fluorine implantation can be used to suppress boron diffusion in the base of a double polysil- icon silicon bipolar transistor and hence deliver a record of 110 ...Secondary ion mass spectroscopy (SIMS) and ...
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High-energy, high-dose O implantation in Si
... an implantation-induced vacancy excess as detected by DCXRD ...of ion-atom and atom-atom contribute to the vacancy ...Hence, implantation to high doses as well as implant conditions that ...
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Ion Radiation Detection Using Implanted Ultrahigh Molecular Weight Polyethylene Structures (UHMWPE)
... with high energy ions originated from their ability to register nuclear tracks and the applications of polymers as particle detectors or as membranes, which are widely described in the literature [4] [5] ...to ...
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Ion Implantation Induced Martensite Nucleation in SUS301 Steel
... In ion implantation technique, the distribution of trans- formed phase depends on accelerating energy, so it is possible to produce martensite phase in surface region with ...to implantation with ...
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Investigation of defects formed by ion implantation of H2+ into silicon
... at high fluences maintain their p-type behavior up until approximately 450°C, at which point a predominance of n-type traps, called thermal donors, compensate and invert the semiconductor ...
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Characterization of ion implanted antimony
... Table 5: Summary of Ion Implanted Buried Layer Process Parameters Process Parameter Version A Version B 600 250 140 50 Implantation Screen Oxide Thickness A Implantation Energy keV Impla[r] ...
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Surface Property Modification of Polylactic Acid by Ion Implantation
... acid surfaces causes surface roughness and an increase in contact angle, and, in turn, the increased.. 44.[r] ...
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The ion implantation induced properties of one dimensional nanomaterials
... the ion species and implant energy ...the ion source after Ar + ion ...the ion incident direction at low implant energy; in this situation, the damaged region was only the side of nanowires ...
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Ion-implantation and analysis for doped silicon slot waveguides
... ions/cm 2 , followed by an anneal to activate the erbium, as detailed later in this section. Both species were implanted at 30 degrees to the surface normal to reduce the implanta- tion depth and to give a more uniform ...
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Channeling in Semiconductors and its Application to the Study of Ion Implantation
... The influence of channeling on particle trajectories is most strikingly observed in the significant reduction in the energy loss of the particles passing through [r] ...
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Optimization of Manufacturing of Operational Amplifier Manufactured by Using Field effect Heterotransistor to Decrease Their Dimensions
... Dependences of optimal annealing time are presented on Figs. 4 for diffusion and ion types of doping, respectively. It should be noted, that it is necessary to anneal radiation defects after ion ...
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Effect of fluorine implantation dose on boron thermal diffusion in silicon
... that suppression of boron thermal diffusion is only seen for the highest F + dose of 1.4 ⫻ 10 15 cm −2 . Trapping of intersti- tials at dislocation loops in the deep fluorine peak can there- fore also be ...
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