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hot electron

Micron-scale mapping of megagauss magnetic fields using optical polarimetry to probe hot electron transport in petawatt-class laser-solid interactions

Micron-scale mapping of megagauss magnetic fields using optical polarimetry to probe hot electron transport in petawatt-class laser-solid interactions

... that hot electron transport in metals (such as Al) is less prone to filamentation, compared to materials such as ...the hot electron distribution remains relatively smooth and almost beam-like ...

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Modelling hot electron generation in short pulse target heating experiments

Modelling hot electron generation in short pulse target heating experiments

... and electron beam driven fast ignition schemes, rely on the interaction of a short pulse high intensity laser with dense material to generate a flux of energetic ...this electron source are well known in ...

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Modeling of Noise and Resistance of Semimetal Hg1 xCdxTe Quantum Well used as a Channel for THz Hot Electron Bolometer

Modeling of Noise and Resistance of Semimetal Hg1 xCdxTe Quantum Well used as a Channel for THz Hot Electron Bolometer

... of electron concentration (at the stable concen- tration of background charged impurities in the well) leads to strong increase of mobility and appropriate reduction of resistance due to two simultaneous ...

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On Hot Electron Transport in Si(100) 2DEG at Low Lattice Temperature

On Hot Electron Transport in Si(100) 2DEG at Low Lattice Temperature

... calculate electron temperature and hot electron mobility at low lattice temperatures in semiconductor inversion layer where the electrons are quantized to form a two-dimensional electron gas ...

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STUDY OF INFLUENCE OF SCATTERING ON HOT ELECTRON USING MONTE CARLO METHOD

STUDY OF INFLUENCE OF SCATTERING ON HOT ELECTRON USING MONTE CARLO METHOD

... become hot electrons in the drain. The hot electrons are reflected back into the source-end, causing an increase in the injection barrier at the source ...of hot electrons from the drain back into ...

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Transient hot electron dynamics in single layer TaS2

Transient hot electron dynamics in single layer TaS2

... A much more surprising result of the optical excitation is that the entire dispersion is shifted to higher bind- ing energies by > ⇠ 100 meV whereas the position of the Fermi edge remains constant, as seen clearly by ...

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Geomagnetic storms driven by ICME  and CIR dominated solar wind

Geomagnetic storms driven by ICME and CIR dominated solar wind

... average hot electron and hot ion density, as a function of epoch time, for 283 storms between 1990 and ...of hot electron and hot ion temperature and density and bin each ...

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Novel scintillator-based x-ray spectrometer for use on high repetition laser plasma interaction experiments

Novel scintillator-based x-ray spectrometer for use on high repetition laser plasma interaction experiments

... acts with an underdense or overdense plasma, a relativistic population of electrons is generated. These electrons can cre- ate x-rays that have a short pulse duration and small source size and are highly penetrating due ...

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Absolute instability modes due to rescattering of stimulated Raman scattering in a large nonuniform plasma

Absolute instability modes due to rescattering of stimulated Raman scattering in a large nonuniform plasma

... of hot electrons. As shown in Fig. 4(b), the electron energy distribution tends to be saturated after t = 3000τ, and the maximum electron energy is still less than 200keV at t = ...that hot ...

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Top Hat HELLISH VCSOA for optical amplification and wavelength conversion for 0 85 to 1 3μm operation

Top Hat HELLISH VCSOA for optical amplification and wavelength conversion for 0 85 to 1 3μm operation

... Top-Hat hot electron light emission and lasing in semiconductor heterostructure (HELLISH)-vertical cavity semiconductor optical amplifier (VCSOA) is a modified version of a HELLISH-VCSOA ...

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LO-Phonon Emission Rate of Hot Electrons from an On-Demand Single-Electron Source in a GaAs/AlGaAs Heterostructure

LO-Phonon Emission Rate of Hot Electrons from an On-Demand Single-Electron Source in a GaAs/AlGaAs Heterostructure

... on-demand, hot single electron sources has opened up a new energy domain in which to study fundamental electron behaviour in the solid state ...of hot electrons in GaAs systems is the energy ...

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Efficient transport of femtosecond laser-generated fast electrons in a millimeter thick graphite

Efficient transport of femtosecond laser-generated fast electrons in a millimeter thick graphite

... The angular distribution of the fast electrons, trans- ported through the 1 mm-thick graphite, was measured (experimental setup in Fig. 1(b)) by an IP, wrapped in a 33 µm-thick aluminium foil. This foil stops the fol- ...

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Ga0 35In0 65 N0 02As0 08/GaAs bidirectional light emitting and light absorbing heterojunction operating at 1 3 μm

Ga0 35In0 65 N0 02As0 08/GaAs bidirectional light emitting and light absorbing heterojunction operating at 1 3 μm

... Vertical-cavity semiconductor optical amplifiers (VCSOAs) at 1.3 μm are key photonic components in optical com- munication systems [1-4]. Dilute nitride III-V alloy se- miconductors and in particular GaInNAs/GaAs quantum ...

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Study of electron and proton isochoric heating for fast ignition

Study of electron and proton isochoric heating for fast ignition

... MeV hot electron temperature, a resistivity of 10 −6 Ohm m (the peak value which occurs at 30 to 100 eV) and requiring a 100 m scale length, gives ...

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Predicting hot spots in protein interfaces based on protrusion index, pseudo hydrophobicity and electron-ion interaction pseudopotential features

Predicting hot spots in protein interfaces based on protrusion index, pseudo hydrophobicity and electron-ion interaction pseudopotential features

... identifying hot spot (shown in Table 1 and Supplementary Table ...for hot spot ...KFC2 hot spot model [20] and DBSI DNA-binding site model ...

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Fabrication and characterization of solution processed methanofullerene based organic field effect transistors

Fabrication and characterization of solution processed methanofullerene based organic field effect transistors

... measured electron mobility ␮ is more than three orders higher than electron mobilities reported previ- ously for PCBM-based OFETs with calcium 共 Ca 兲 electrodes and poly 共 4-vinyl phenol 兲 共 PVP 兲 as a ...

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The development of electrical plasma diagnostics for HiPIMS discharges

The development of electrical plasma diagnostics for HiPIMS discharges

... secondary electron emission as argon ions do. As a result, the secondary electron emission and the resultant discharge current tend to decrease when the gas rarefaction develops during a HiPIMS ...

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Application of Combustion Hot Spot Analysis to Process Furnace with Arbor Coils

Application of Combustion Hot Spot Analysis to Process Furnace with Arbor Coils

... Despite numerous advantages, it is essential to note that the Lobo-Evans model is not able to locate the hot spots on the tubes or cannot consider the effects of burner layout in the variations of heat flux ...

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Adhesive Force Improvement of Lamination with 18 8 Stainless Steel and CFRP Separately Irradiated by Electron Beam Prior to Assembly and Hot Pressing

Adhesive Force Improvement of Lamination with 18 8 Stainless Steel and CFRP Separately Irradiated by Electron Beam Prior to Assembly and Hot Pressing

... Although the sheet electron beam generation is in a vacu- um, the irradiated sample has been kept under protective ni- trogen at atmospheric pressure. The distance between sample and window is 35 mm. To prevent ...

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Consequences of Hot Air and/or γ   Rays on Hair Hygiene Post the Application of Protein Conditioner in Rats: Urea, Creatinine, Scanning Electron Micro

Consequences of Hot Air and/or γ Rays on Hair Hygiene Post the Application of Protein Conditioner in Rats: Urea, Creatinine, Scanning Electron Micro

... Most of hair cosmetics contain significant huge amounts of chemicals mainly, formaldehyde. In the present study, urea and creatinine levels, which are significant indicators for renal function, were increased among the ...

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