InAs/GaSb
Metalorganic chemical vapor deposition growth of InAs/GaSb type II superlattices with controllable Asx Sb1 xinterfaces
... InAs/GaSb superlattices (SLs) are important for long- wavelength infrared (IR) applications because of their broken gap type II band alignment with the conduction band minimum of InAs lying below the ...
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Interplay of exciton condensation and the quantum spin Hall effect in InAs/GaSb bilayers
... We study the phase diagram of the inverted InAs = GaSb bilayer quantum wells. For a small tunneling amplitude between the layers, we find that the system is prone to the formation of an s -wave exciton ...
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Spin-orbit interaction in InAs/GaSb heterostructures quantified by weak antilocalization
... (Received 1 November 2016; revised manuscript received 6 March 2017; published 10 April 2017) We study the spin-orbit interaction (SOI) in InAs/GaSb and InAs quantum wells. We show through ...
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Spin orbit interaction in InAs/GaSb heterostructures quantified by weak antilocalization
... The Rashba spin-orbit interaction (SOI) has been stud- ied in 2DEGs in several InAs and InGaAs quantum-well (QW) heterostructures [21–28]. The SOI gives rise to the conventional spin-Hall effect (SHE), which is ...
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Growth Optimization, Strain Compensation and Structure Design of InAs/GaSb Type II Superlattices for Mid Infrared Imaging
... of InAs/GaSb T2SLs grown by MBE aiming for fabricating mid-wavelength infrared (MWIR) FPA ...the GaSb layer, at the InAs/GaSb and GaSb/InAs interfaces and their ...
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Optical tuning of the charge carrier type in the topological regime of InAs/GaSb quantum wells
... of InAs/GaSb double quantum wells can be tuned from electronlike to holelike without needing any external electric ...of InAs/GaSb double quantum wells may amend for leakage currents in this ...
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Electrical Properties of Midwave and Longwave InAs/GaSb Superlattices Grown on GaAs Substrates by Molecular Beam Epitaxy
... photodetector. InAs/GaSb T2SL is traditionally grown on lattice-matched GaSb ...over, GaSb substrates are not “epi-ready” and their growth surfaces contain many macroscopic defects ...in ...
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Deconvolution of Rashba and Dresselhaus spin-orbit coupling by crystal axis dependent measurements of coupled InAs/GaSb quantum wells
... and InAs/GaSb both have a zinc-blende crystal structure throughout their active regions, in which bulk inversion symmetry is ...the InAs/GaSb coupled quantum well system adds another layer of ...
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Observation of linear and quadratic magnetic field dependence of magneto photocurrents in InAs/GaSb superlattice
... the InAs/GaSb type II supperlattice has some advantages in investigat- ing spin transport and fabricating spintronic devices for its properties of large SOI in InAs and GaSb, relatively high ...
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In plane optical anisotropy of InAs/GaSb superlattices with alternate interfaces
... the InAs and GaSb share no common atoms (NCA) across the interface (IF), these IFs have to be controlled by both InAs-like, both GaSb-like or alternating InAs- and GaSb- ...of ...
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Growth and fabrication of InAs/GaSb type II superlattice mid wavelength infrared photodetectors
... the InAs/GaSb superlattice [SL] was firstly introduced by Sai-Halasz et ...the InAs/GaSb SL has received more and more attentions for infrared detec- tion due to its unique advantages over ...
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Long Period InAs/GaSb Type II Superlattices for Terahertz Application
... short-period InAs/GaSb type-IISLs with the layer widths around 21/24 angstrom, a strong photo-response signal can be observed in the MIR band- width and the cut-off wavelength can be tuned effectively by ...
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Spin-orbit interaction in InAs/GaSb heterostructures quantified by weak antilocalization
... in InAs/GaSb and InAs quantum wells using weak ...the InAs/GaSb heterostruc- ture reported here, is the Elliott-Yafet mechanism, which also contributes in our InAs ...
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InAs/GaSb superlattice interband cascade light emitting diodes with high output power and high wall plug efficiency
... In this work, 2-stage and 5-stage mid-infrared superlattice interband cascade light emitting diodes (ICLEDs) were fabricated and studied at different temperatures.. The ICLEDs were comp[r] ...
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Simulation of III-V Material Based Steep Slope Tunnel FET for RF Harvester Application
... devices InAs/GaSb and InGaAs/InP TFET at Vgs ...The InAs/GaSb TFET achieved a maximum current value is ...with InAs/GaSb TFET of ...of InAs/GaSb HTFET, although it ...
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Self Catalyzed Growth of Vertical GaSb Nanowires on InAs Stems by Metal Organic Chemical Vapor Deposition
... high-quality GaSb nanowires on InAs stems using metal-organic chemical vapor deposition (MOCVD) on Si (111) ...vertical InAs/GaSb heterostructure nanowires, the two-step flow rates of the ...
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Proposal for the detection and braiding of Majorana fermions in a quantum spin Hall insulator
... FIG. 1. (Color online) Left panel: Andreev quantum dot, created by a gate electrode at the edge of a quantum spin Hall (QSH) insulator in a perpendicular magnetic field B. A current I is passed between metallic and ...
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Effect of growth temperature on the morphology and phonon properties of InAs nanowires on Si substrates
... bulk InAs (111) substrate for comparison, the spectrum of which is shown in Figure ...bulk InAs materials, two Raman peaks are clearly observed: one is located around ...of InAs NWs. Except the ...
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Photoluminescence quenching mechanisms in type II InAs/GaInSb QWs on InAs substrates
... an InAs substrate were investigated from the point of view of room temperature emission in the mid- and long-wavelength infrared ...such InAs substrate-based type II structures is related to the escape of ...
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GaSb based solar cells for multi junction integration on Si substrates
... Si, GaSb and InAsSb peaks can clearly be identified. The position of the GaSb peak corresponds to a 101% relaxed GaSb ...the GaSb FWHM at 295 arcsec, close to the values mentioned in the ...
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