InGaAs/GaAs quantum dots
Ultrasmall microdisk and microring lasers based on InAs/InGaAs/GaAs quantum dots
... Microrings and microdisks with a semiconductor AlGaAs pedestal were fabricated. The active region of the lasers was based on InAs/InGaAs/GaAs quantum dots emitting near 1.3 μm with high ...
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Single photon emission from single InGaAs/GaAs quantum dots grown by droplet epitaxy at high substrate temperature
... investigations are necessary to get better understanding of the mechanisms responsible for the line broadening. Autocorrelation measurements have also been per- formed to demonstrate single-photon generation under cw ...
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Temperature-dependent modulated reflectance of InAs/InGaAs/GaAs quantum dots-in-a-well infrared photodetectors
... Temperature-dependent (3–300 K) PR spectroscopy was used to study optical transitions within dots-in-a-well photo- detector structures. Cumulative analysis of PR, phototrans- mittance, and ...
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Effect of detuning on the phonon induced dephasing of optically driven InGaAs/GaAs quantum dots
... driven quantum dot and its phononic environment, and present experiments showing how the LA-phonons modify the absorption spectrum of a picosecond laser ...
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Energy state of InGaAs quantum dots on SiO2 patterned vicinal substrate
... and 3.2 ML, respectively. The growth thickness and temperature of GaAs cap layer for PL were 100 nm and 500°C, respectively. The structural and optical properties were investigated by SEM and μ-PL. μ-PL ...
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InGaAs/GaAs Quantum Dot Solar Cells by Metal Organic Chemical Vapour Deposition
... of quantum dots into single junction p-i-n solar cell can produce below bandgap light absorption and generate extra photocurrent and consequently improves the short circuit current density ...the ...
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Exciton Dynamics in Stacked InGaAs/GaAs Quantum Rings Under Resonant Excitation
... We report systematic temperature-dependent measurements of photoluminescence spectra in self-assembled InGaAs/GaAs quantum rings (QRs) under resonant excitation condition. We have studied the rise in ...
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Submonolayer InGaAs/GaAs quantum dot solar cells
... of quantum structures have been proposed to obtain the optimal energy bandgap and current matching for multijunction solar cells ...as quantum wells (QWs) and quantum dots (QDs), can introduce ...
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Interband Photoconductivity of Metamorphic InAs/InGaAs Quantum Dots in the 1 3–1 55 μm Window
... maintain photosensitivity comparable to the GaAs-based ones [5]. However, such metamorphic structures are sel- dom studied in photoelectric measurements with a lat- eral geometry, where the photocurrent proceeds ...
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Photoconductivity Relaxation Mechanisms of InGaAs/GaAs Quantum Dot Chain Structures
... the GaAs spacers and the InGaAs, which causes photo- ...in GaAs spacers due to carrier trapping by deep ...of InGaAs quantum dots is characterized by the presence of some defect ...
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Energy Levels of InGaAs/GaAs Quantum Dot Lasers with Different Sizes
... cubic InGaAs quantum dots (QDs) surrounded by ...in InGaAs-GaAs interfaces, as well as in smaller ...bulk GaAs and come down into the QD separate ...
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Interplay Effect of Temperature and Excitation Intensity on the Photoluminescence Characteristics of InGaAs/GaAs Surface Quantum Dots
... In contrast, the SQDs are intimately contacted with the surface states [17, 20]. At low temperature, there is strong competition between SQDs and surface states for receiving photon generated carriers from the ...
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Long nuclear spin polarization decay times controlled by optical pumping in individual quantum dots
... single InGaAs/ GaAs quantum dot in the regime of optically induced nuclear spin bistability in magnetic field of 1 – 3 ...single InGaAs dots at B ext 艋 ...
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Correlating Photoluminescence and Structural Properties of Uncapped and GaAs-Capped Epitaxial InGaAs Quantum Dots
... uncapped InGaAs QDs is shown in ...with GaAs to form InGaAs ...for GaAs and ...the InGaAs QDs are ellipsoidal in shape with a pre- ferred elongation in the direction perpendicular to ...
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Dynamic nuclear polarization in InGaAs/GaAs and GaAs/AlGaAs quantum dots under nonresonant ultralow-power optical excitation
... semiconductor quantum dots: In- GaAs/GaAs and ...InP/GaInP quantum dots ...the InGaAs/GaAs dots this nuclear spin polarization mechanism is particularly pro- ...
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Ultra High Purity Gallium and Indium for Emerging Iii-V Epitaxial Nanoelectronics Materials Technologies: An Overview
... In MOVPE, a major replacement effort for the highly toxic As- and P- sources and perfection of safety issues has been underway for some time, but hydride sources remain dominant due to cost considerations. Oxygen ...
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The Role of Parameter Variations in the Static and Dynamic Characteristics of Quantum Dot Lasers by Using Circuit-Level Modeling
... the quantum well, and then relax inside the ...the quantum well area) and inside the dots in two radiative or non-radiative ...the quantum dot, charge neutrality exists and ...
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Radiative Recombination Mechanisms of Large InAs/GaAs Quantum Dots
... these dots, one electron-hole pair will rapidly relax into a ground state exciton, and Pauli blocking in the ground state will force (for appropriate spin) the second exciton into the excited state, increasing the ...
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Post-growth spectral tuning of InGaAs/GaAs quantum dot infrared photodetectors
... in quantum dot infrared photodetectors (QDIPs) results in interesting ...a GaAs substrate because the lattice constant of the former is about 7% larger than the ...
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Nonparabolic band effects in GaAs/AlxGa1 xAs quantum dots and ultrathin quantum wells
... function spillover they are approximated as flat boxes with average lateral sizes of 16 nm width and 44 nm length. The wave-function penetration is smaller than for the wells since the dots are thicker, and comes ...
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