InGaAs-GaAs:Si
Energy Levels of InGaAs/GaAs Quantum Dot Lasers with Different Sizes
... cubic InGaAs quantum dots (QDs) surrounded by ...in InGaAs-GaAs interfaces, as well as in smaller ...bulk GaAs and come down into the QD separate ...
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Dynamic nuclear polarization in InGaAs/GaAs and GaAs/AlGaAs quantum dots under nonresonant ultralow-power optical excitation
... These seemingly contradicting results can be explained if we take into account the role of anisotropic electron- hole exchange (Coulomb) interaction which has no signif- icant effect in case of InGaAs dots. ...
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Exciton Dynamics in Stacked InGaAs/GaAs Quantum Rings Under Resonant Excitation
... nm GaAs spacer ...of GaAs is used to partially cap the seed pyramidal ...of InGaAs due to the initial alloying effect of the original InAs dot and the 2 nm thick GaAs capping layer ...
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InGaAs/GaAs Quantum Dot Solar Cells by Metal Organic Chemical Vapour Deposition
... In addition, quantum dot volume is relatively small to get sufficient absorption for QD solar cells to work effectively. In general, stacking multiple QD layers is essential to enhance the total QDs volume and hence ...
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Temperature dependent Raman investigation of rolled up InGaAs/GaAs microtubes
... due to the lattice mismatch between the InGaAs and the GaAs layers. Raman measurements were performed in the backscattering geometry using the 514.5 nm line of an Ar + laser and the 632.8 nm line of a HeNe ...
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Photoconductivity Relaxation Mechanisms of InGaAs/GaAs Quantum Dot Chain Structures
... the InGaAs, while GaAs is transparent in the spectral range ...the InGaAs potential well in various ways, such as thermal emission, Poole-Frenkel emission [22, 23], or tunneling ...in InGaAs ...
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Ultrasmall microdisk and microring lasers based on InAs/InGaAs/GaAs quantum dots
... Microrings and microdisks with a semiconductor AlGaAs pedestal were fabricated. The active region of the lasers was based on InAs/InGaAs/GaAs quantum dots emitting near 1.3 μm with high confinement energy ...
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The Role of Parameter Variations in the Static and Dynamic Characteristics of Quantum Dot Lasers by Using Circuit-Level Modeling
... self-assembled InGaAs-GaAs quantum dot Laser, the laser coverage factor increment can increases the laser threshold current, the external quantum efficiency, the output power and the modulation ...
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Post-growth spectral tuning of InGaAs/GaAs quantum dot infrared photodetectors
... and InGaAs/GaAs QW samples in order to understand the important parameters before studying QD ...Unlike GaAs/AlGaAs QWs, the InGaAs/GaAs QDs are highly strained due to the lattice ...
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Low Temperature Photoluminescence Measurement of Extremely Thin InGaAs/GaAs Multi Quantum Wells Grown by Molecular Beam Epitaxy
... Indium gallium arsenide (InGaAs) has been the focus of research interest because it can result in self assembled confined structures such as quantum dots during epitaxial growth. Indium gallium arsenide ...
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Quantum dot cascade laser
... using InGaAs/GaAs/InAs/InAlAs material system can realize controllable InAs QDs on tensile-strained InAlAs layers; second, the population inversion is achieved be- tween lower levels of coupled InAs QDs and ...
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Detecting Spatially Localized Exciton in Self Organized InAs/InGaAs Quantum Dot Superlattices: a Way to Improve the Photovoltaic Efficiency
... InAs/ GaAs QDs layer with a thin InGaAs strain-reduced ...InAs/ GaAs QDs SC which is of considerable practical and theoretical ...InAs/ InGaAs/GaAs QD heterostructures as shown by Ilahi ...
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Effect of detuning on the phonon induced dephasing of optically driven InGaAs/GaAs quantum dots
... Figure 1 presents a Rabi rotation measurement taken at 5 K. A circularly polarized Gaussian laser pulse excites the neu- tral exciton transition of a single InAs/GaAs quantum dot on- resonance. The photocurrent ...
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Submonolayer InGaAs/GaAs quantum dot solar cells
... and GaAs reference cell. Compared to the GaAs reference cell, the additional spectral response at 960 nm is observed for both SML QDSC and ...the GaAs bandgap ( 10%) is comparable to the sub-bandgap ...
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Rolled Up Nanotech: Illumination Controlled Hydrofluoric Acid Etching of AlAs Sacrificial Layers
... The ESE was used to position and control the roll up of tubes from strained InGaAs/GaAs bilayers. The patterning allowed us to create well-defined starting edges suitable for the illumination experiment (as ...
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Bipolar Effects in Photovoltage of Metamorphic InAs/InGaAs/GaAs Quantum Dot Heterostructures: Characterization and Design Solutions for Light Sensitive Devices
... Development of the light-sensitive devices requires in- depth study of the photoelectric properties. Photovoltage (PV) or photoconductivity (PC) studies is an ideal tool for the determination of the photoresponse as ...
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Design and characterization of high optical quality InGaAs/GaAs/AlGaAs-based polariton microcavities
... A typical microcavity structure consists of two distributed Bragg-reflector (DBR) mirrors forming a Fabry-P erot cavity containing several QWs. The DBR mirrors are formed by alternate layers of materials with contrasting ...
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Correlating Photoluminescence and Structural Properties of Uncapped and GaAs-Capped Epitaxial InGaAs Quantum Dots
... particularly InGaAs QDs grown on GaAs substrates, is crucial for both fundamental research and optoelectronic device ...of InGaAs QDs to correlate directly composition, strain and shape of QDs with ...
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Single photon emission up to liquid nitrogen temperature from charged excitons confined in GaAs based epitaxial nanostructures
... mature GaAs-based technology permits producing more sophisti- cated and multifunctional quantum systems, including pho- tonic waveguides, microcavities with exceptional parameters, or photonic integrated ...
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Characterization of 6 1 Å III V materials grown on GaAs and Si: a comparison of GaSb/GaAs epitaxy and GaSb/AlSb/Si epitaxy
... and dark current measurements, GaSb p-i-n structures grown on GaAs and Si substrates using IMF.. arrays were compared with an equivalent structure grown lattice matched on native GaSb..[r] ...
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