InGaN-based light emitting diodes
Enhancement of InGaN Based Light Emitting Diodes Performance Grown on Cone Shaped Pattern Sapphire Substrates
... enhance light extraction effciency, high-quality InGaN-based light emitting diodes (LED) was grown on cone-shaped patterned sapphire (CPSS) by using metal organic chemical vapor ...
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Optical and polarization properties of nonpolar InGaN-based light-emitting diodes grown on micro-rod templates
... with an output power of 1.3 mW at 20 mA. Furthermore, the external quantum eiciency (EQE) has been calcu- lated as a function of current as well, as shown in Fig. 4(c). In order to compare the eiciency performances of ...
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Influence of patterned sapphire substrates with different symmetry on the light output power of InGaN based LEDs
... the light output power (LOP) of InGaN-based light-emitting diodes (LEDs) grown on patterned sapphire substrates (PSSs) with different ...strain. Based on the ...
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Mechanism of enhanced light output in InGaN-based microlight emitting diodes
... Micro-light emitting diode 共 LED 兲 arrays with diameters of 4 to 20 m have been fabricated and were found to be much more efficient light emitters compared to their broad-area counterparts, with up ...
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The effect of free standing GaN substrate on carrier localization in ultraviolet InGaN light emitting diodes
... LEDs based on the InGaN/AlInGaN MQW epitaxial structure on undoped GaN/sapphire template was also conducted for ...substrate based on the photoluminescence (PL) wavelength of the UV-LED epi- taxial ...
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Temperature-dependent efficiency droop of blue InGaN micro-light emitting diodes
... Significant progress has been achieved in the application and physical understanding of GaN-based light emitting diodes (LEDs). However, their external quantum efficiency (EQE) shows a ...
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Optoelectronic Properties of GaN Based Light Emitting Diodes with Different Mesa Structures
... lighting-emitting diodes with six mesa struc- tures are ...lighting-emitting diodes can be greatly improved by reducing the current ...cient light-emitting area, and the ...
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Fabrication of InGaN/GaN MQWs Vertical Blue Light-Emitting Diodes Using Laser Lift-Off Technique
... solid-state light source, vertical–injection GaN–based light-emitting diodes (LEDs) [1-3] have been identified the most promising candidates for production of high power ...
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Light-Emitting Diodes in the Solid-State Lighting Systems
... the light output was not enough to illuminate an area ...the light output rose, while maintaining efficiency at acceptable levels ...LED based on indium gallium nitride (InGaN) ...
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Aging characteristics of blue InGaN micro-light emitting diodes at an extremely high current density of 3.5kAcm−2
... blue InGaN micro-LED device was fabricated using a commercial wafer on c-plane sapphire substrates from SuperNova ...of InGaN/GaN multiple quantum wells (MQWs), an AlGaN layer, and a p-GaN ...
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Size-dependent capacitance study on InGaN-based micro-light-emitting diodes
... In this work, we present, for the first time, a systematic study of the size-dependent capacitance in InGaN-based µLEDs under reverse and large forward bias, based on AC impedance measurements. µLED ...
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Substrate Free InGaN/GaN Nanowire Light Emitting Diodes
... Nitride light-emitting diodes (LEDs) have found numer- ous applications in our everyday life (general lighting, automotive headlamps, traffic signals, indicator lamps for electronic devices, ...
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Growth and Fabrication of GaN/InGaN Violet Light Emitting Diode on Patterned Sapphire Substrate
... GaN/InGaN based violet light emitting diodes (LEDs), emitting at 430 nm, have been grown on conventional single side polished (SSP) and patterned sapphire substrates ...The ...
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Determination of Planck’s Constant using Light Emitting Diodes
... of light emitting ...the light emitted by each LED. A measure of voltage drop across each light emitting diode was used to Planck’s con- stant by relating it to the energy ab- ...
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Title: AN OVERVIEW OF VISIBLE LIGHT COMMUNICATION SYSTEMS
... Visible light communication technology similar to wireless routers will enter our lives and complement the existing RF technology ...visible light communication technology which uses light ...
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Enhanced Performance of Quantum Dot Based Light Emitting Diodes with Gold Nanoparticle Doped Hole Injection Layer
... dot-based light-emitting diodes (QLEDs) comprising ZnCdSe/ZnS core-shell QDs as an emitting layer were enhanced by employing Au-doped poly(3,4-ethylenedioxythiophene)/polystyrene ...
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Strong photonic crystal behavior in regular arrays of core-shell and quantum disc InGaN/GaN nanorod light-emitting diodes
... Quantum disc nanorod samples were defined by the same NIL process and dry-etched from an epitaxial struc- ture comprising an n-type GaN layer, a 2nm thick single InGaN/GaN quantum well (SQW) with In fraction 15- ...
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Solvent immersion nanoimprint lithography of fluorescent conjugated polymers
... semiconducting light-emitting polymers make them attractive materials for inexpensive photonic and optoe- lectronic ...organic light-emitting diodes (OLEDs), 1,2 ...
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Growth and characterization of thin Cu phthalocyanine films on MgO(001) layer for organic light emitting diodes
... enable light to be emitted from the bottom of the struc- ...organic light-emitting diode (OLED) device performance ...organic light-emitting diodes (OLEDs) ...
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Characterization of Photophysical Properties of D AD Type Diketopyrrolopyrrole Based Molecules for Organic Light-Emitting diodes and Organic Solar Cells
... In the present work, we designed several D–π–A–π–D structure DPP-based small molecules for OSCs and OLEDs applications. These molecules consist of the electron deficient DPP as the core (acceptor), different ...
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