Magnetic tunnel junctions
Field sensing in MgO double barrier magnetic tunnel junctions with a superparamagnetic Co50Fe50 free layer
... Magnetic tunnel junctions (MTJs) with crystalline MgO barriers have been extensively studied due to their high tun- neling magnetoresistance (TMR) and potential for applica- tions in spin torque ...
5
Exchange biased magnetic tunnel junctions with antiferromagnetic epsilon Mn3Ga
... bottom-pinned synthetic antiferromagnet magnetic tunnel junctions with MgO barriers, which show up to 150% tunneling magnetoresistance at room temperature. Exchange bias fields as high as 150 mT can ...
5
Superparamagnetism in MgO based magnetic tunnel junctions with a thin pinned ferromagnetic electrode
... MgO-based magnetic tunnel junctions have been fabricated with a thin Co 40 Fe 40 B 20 共 CoFeB 兲 layer in the pinned synthetic antiferromagnetic CoFe/Ru/CoFeB ...the magnetic anisotropy ...
5
Chemical and structural analysis on magnetic tunnel junctions using a decelerated scanning electron beam
... evaluate magnetic tunnel junctions and have revealed their different magnetoresistance ratios caused by the presence of materials formed at the junction ...
20
Prediction of large bias dependent magnetoresistance in al l oxide magnetic tunnel junctions with a ferroelectric barrier
... many magnetic data storage technologies, in particular since extremely large tunneling magnetoresistance (TMR) was ...producing magnetic tunnel junctions (MTJs) with large TMR was initially ...
5
Magnetically soft, high moment grain refined Fe films: application to magnetic tunnel junctions
... and magnetic properties of thin Fe layers has been employed to construct all Fe-electrode magnetic tunnel junctions that displayed the tunneling magnetoresistance (TMR) ...in magnetic ...
5
Temperature dependence of shot noise in double barrier magnetic tunnel junctions
... (Received 17 January 2018; revised manuscript received 28 February 2018; published 20 March 2018) Shot noise reveals spin dependent transport properties in a magnetic tunnel junction. We report measurement ...
6
A Two-Band Tight-Binding Model of Spin-Polarized Transport in Magnetic Tunnel Junctions
... in magnetic tunnel junctions [9-11] revealed the details of TMR and GMR mechanisms in ballistic ...MgO-based magnetic tunnel junctions was investigated in two-band free electron ...
10
The effect of magnetic annealing on barrier asymmetry in Co40Fe40B20/MgO magnetic tunnel junctions
... magnetic tunnel junctions (MTJs) emerged as a promising component for magnetic sensors and magnetic random access memory ...MgO tunnel barriers in magnetic tunnel ...
5
Very low 1/f barrier noise in sputtered MgO magnetic tunnel junctions with high tunneling magnetoresistance
... century, magnetic tunnel junctions (MTJs) with crystalline MgO barriers have become an active area of research, 1–4 following predictions by theory of a large magnetoresistance with bcc Fe or CoFe ...
5
Conductance enhancement due to interface magnons in electron beam evaporated MgO magnetic tunnel junctions with CoFeB free layer deposited at different pressure
... Magnetic tunnel junctions (MTJs) with the core structure of an insulating layer sandwiched between two ferromagnetic layers have the potential to be widely used as the key element in read heads of ...
6
Computational design of usual magnetic tunnel junctions
... amorphous magnetic tunnel junctions (MTJ) and measured the cur- rent in both the parallel and anti-parallel configuration of the magnetic moments of the iron and cobalt electrodes (see in ...
206
Tunneling processes in asymmetric double barrier magnetic tunnel junctions with a thin top MgO layer
... barrier magnetic tunnel junctions with a thin top MgO ...normal tunnel-like behavior, while the resistance in the parallel state shows metallic-like transport, indicating the presence of ...
6
Bias voltage dependence of inverted magnetoresistance on the annealing temperature in MgO based magnetic tunnel junctions
... In this work, we fix the thickness of the non-magnetic metal Ru (0.85 nm) in the sandwich CoFe/Ru/CoFeB, and change the thickness of the pinned CoFeB electrode in the SAF from 0.5 to 1.5 nm. Because of the ...
5
Annealing of CoFeB/MgO based single and double barrier magnetic tunnel junctions: Tunnel magnetoresistance, bias dependence, and output voltage
... The TMR bias voltage dependence of DMTJs after an- nealing at different temperatures is summarized in Figs. 7共a兲 and 7共b兲. Annealing at a low temperature of 200 ° C results in values of V 1/2 + = 1.88 V and V 1/2 − = ...
7
MgO based magnetic tunnel junctions and their applications
... the magnetic alignment o f the ...the magnetic alignment (see Table ...nonmagnetic tunnel junctions [17]. The way the electrons tunnel through the barrier depending on the layer ...
156
Effect of insertion layer on electrode properties in magnetic tunnel junctions with a zero moment half metal
... applied magnetic field and bias ...the magnetic field applied perpendicular to the sample ...thinnest tunnel barrier was observed with Ta ...the tunnel barrier thickness is close to the ...
8
Evidence for boron diffusion into sub-stoichiometric MgO (001) barriers in CoFeB/MgO-based magnetic tunnel junctions
... Evidence of boron diffusion into the MgO barrier of a CoFeB/MgO based magnetic tunnel junction has been identified using analytical scanning transmission electron microscopy (STEM) and X-ray photoelectron ...
8
Annealing effect on tunneling magnetoresistance in MgO based magnetic tunnel junctions with FeMn exchange bias layer
... The MgO-based FeMn-MTJs with t = 1.5 nm were selected for detailed study. It is found that the magnetic reversals in the unpatterned M-H and patterned R-H samples show little difference in this stack. This is ...
5
Spin polarized tunneling in hybrid magnetic tunnel junctions comprising C60
... Since the discovery of the giant magnetoresistance (GMR) effect in 1988, for which the Nobel Prize in Physics 2007 was awarded to Peter Grünberg and Albert Fert, spintronics has received a great deal of interest. The ...
71