metal-insulator-metal
Plasmon Enhanced Symmetric Mode Generation in Metal Insulator Metal Structure with Kerr Nonlinear Effect
... with metal- insulator-metal (MIM) configuration have gained an increasing research interest due to their ability to squeeze SPP field into dielectric core below diffraction limit which enables MIM ...
5
Active Metal Insulator Metal Plasmonic Devices
... resonators exhibit color filtering across the entire visible spectrum. Devices were fabricated using silver bonding and layer transferred lithium niobate as discussed in Chapter 5. Full field elec- tromagnetic ...
166
Field-enhanced direct tunneling in ultrathin atomic-layer-deposition-grown Au-Al2O3-Cr metal-insulator-metal structures
... reproducible metal-oxide thin films over large surface areas, making it particularly promising with regard to mass fabrication of capacitors and devices based on ...example, ...
12
Dielectric Characteristics of Barium Strontium Titanate Based Metal Insulator Metal Capacitor for Dynamic Random Access Memory Cell
... the Metal-Insulator-Metal (MIM) capacitor structure is designed and fabricated with barium strontium titanate (BST) oxide material as the capacitor dielectric material and silver as both top and ...
9
Si:SrTiO3 Al2O3 Si:SrTiO3 multi dielectric architecture for metal insulator metal capacitor applications
... constant >100 (ultra high-k) even in the form of ultra-thin layers. 8 Along with a low bandgap of 3.2 eV, it has a paraelectric phase above 105 K. 9,10 However, crystalline layers of STO suffer from high leakage ...
18
Landau Damping Induced Limits in Nanogap Metal Insulator Metal Plasmonic Waveguides and Cavities
... cancels out the increased confinement under the Landau Damping model, explaining why very little increase is seen. Note that at extremely small gaps some improvement is seen due to the breakdown of the assumptions used ...
88
Integrated Metal-Insulator-Metal Plasmonic Nano Resonator: an Analytical Approach
... the metal-dielectric interface, the propagation modes in MIM structure are created as a result of the coupling between the interfaces’ ...the metal-dielectric interface and to achieve the field continuity ...
12
Self compliance RRAM characteristics using a novel W/TaOx /TiN structure
... simple metal-insulator-metal (M-I-M) struc- ture, fast switching speed, long endurance, stable data retention, low power operation, and high scalability po- tential ...
6
Flatland Photonics: Circumventing Diffraction with Planar Plasmonic Architectures
... confinement. Metal-dielectric channels [23, 116, 24] and metal-insulator-metal slot structures [178, 38, 36, 138] have formed the basis for subwave- length plasmonic waveguides, ...
220
Dynamic structural colur in thin film stacks and patterned nanoparticle arrays
... in metal-insulator-metal (MIM) thin film stacks[30], with strong interference effects causing particular wavelengths to be constructively and deconstructively interfered, resulting in portions of the ...
244
Enhanced low voltage nonlinearity in resonant tunneling metal–insulator–insulator–metal nanostructures
... [5] insulator layers are currently the focus of attention for the development of next-generation antenna-coupled infrared detectors [7] and optical rectennas ...Complementary Metal Oxide Semiconductor ...
6
Enhanced low voltage nonlinearity in resonant tunneling metal-insulator-insulator-metal nanostructures
... [5] insulator layers are currently the focus of attention for the development of next-generation antenna-coupled infrared detectors [7] and optical rectennas ...Complementary Metal Oxide Semiconductor ...
18
Design And Characterization Of Silicon-On-Insulator (SOI) Metal - Oxide- Semiconductor Field Effect Transistor (MOSFET)
... This project is focused on designing the device structure and determined the characterization of Silicon - On - Insulator (SOI) MOSFET. Besides that, this project was conducted by using Silvaco TCAD simulation ...
24
Newtype single-layer magnetic semiconductor in transition-metal dichalcogenides VX 2 (X = S, Se and Te)
... with the HSE energy gaps of 1.1, 1.2, and 0.6 eV, respectively. he gap size and even the metal-insulator transitions are tunable via controlling the ambient parameters such as changing the number of layers ...
12
Resistance Switching Devices Based on Amorphous Insulator-Metal Thin Films
... contacting metal-rich clusters are indeed needed for bulk percolation, but whether any cluster exists or not is immaterial for nanometallicity and ...dispersed metal atoms can tunnel to span a sufficiently ...
525
Absence of Disorder-Driven Metal-Insulator Transitions in Simple Holographic Models
... not disorder-driven: i) saturates at a finite value for fixed T independent of the disorder strength (e.g. [39]); ii) insulating behavior in these models is caused by the depletion of charge carriers as T ! 0. Hence, ...
7
Electrical behavior of MIS devices based on Si nanoclusters embedded in SiOx Ny and SiO2 films
... in metal-insulator- semiconductor (MIS) devices fabricated with such sili- con-rich oxide layers either deposited by (1) plasma- enhanced chemical vapor deposition technique [12] or by (2) magnetron ...
6
Annual summary research report in metallurgy for July 1958–June 1959
... yttrium metal lanthanum metal ce rium metal neodymium metal praseodymium metal gadolinium metal lute tium metal erbium metal ytterbium metal samarium metal terbium metal dysprosium metal[r] ...
142
Semi annual summary research report in engineering for January–June 1959
... yttrium metal lanthanum metal cerium metal neodymium metal praseodymium metal gadolinium metal lutetium metal erbium metal ytterbium metal samarium metal terbium metal dysprosium metal h[r] ...
30
Chemistry semi annual summary research report for January–June, 1959
... yttrium metal lanthanum metal cerium metal neodymium metal praseodymium metal gadolinium metal lutetium metal erbium metal ytterbium metal samarium metal terbium metal dysprosium metal h[r] ...
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