plasma deposited C films
Post annealed gallium and aluminum co doped zinc oxide films applied in organic photovoltaic devices
... microwave plasma-annealed GAZO films were used as the electrode to produce hybrid OPV ...coupled plasma system for oxygen plasma treatment to make the surface of the GAZO films ...was ...
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Transmission Electron Microscopic Studies of LiNb0 5Ta0 5O3 Films Deposited on Sapphire Substrates by Thermal Plasma Spray CVD (Microstructure of LiNb0 5Ta0 5O3 Films Deposited by Thermal Plasma Spray CVD)
... LNT films were grown on LN substrates by LPE, but the crystallinity of the films degraded at x > 0 ...LNT films (0 < x < 1) on Si(111) substrates by sol–gel ...highly c- axis oriented ...
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Phase change properties of GeSbTe thin films deposited by plasma enchanced atomic layer depositon
... ALD- deposited GST films is slower than that of PVD-deposited GST films, which is supposedly due to the ...N, C impurities in ALD-deposited GST films are known to increase ...
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Influence of argon plasma on the deposition of Al2O3 film onto the PET surfaces by atomic layer deposition
... oxide films deposited by ALD and plasma pretreated ALD, as shown in Figure ...oxide films deposited by PA-ALD, as shown in Figure ...cracks deposited by plasma pretreated ...
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Investigations into plasma deposited linalyl acetate thin films for applications in organic electronics
... compatibility, plasma deposited layers of glycidyl methacrylate were investigated and shown to improve the adhesion of subsequently deposited copper layers under certain processing parameters ...
235
Tribological Behavior of Binary B C Films Deposited by Sputtering PBII Hybrid System
... In this article, the authors report on the use of Radio Frequency (RF) Magne- tron Sputtering combined with Plasma-Based Ion Implantation (PBII) tech- nique to synthesize the Boron-Carbon (B-C) ...
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The electrical properties of plasma-deposited thin films derived from pelargonium graveolens
... thin films. The electrical properties of films derived from Pelargonium graveolens (geranium) were investigated in metal–insulator–metal (MIM) ...polymer-like films were deposited using ...
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Gettering of interstitial iron in silicon by plasma enhanced chemical vapour deposited silicon nitride films
... with plasma-enhanced chemical vapour deposited (PECVD) silicon nitride ...nitride films during annealing over a wide temperature range from 250 C to 900 C, via a segrega- tion gettering ...
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Formation of Poly Si Films on Glass Substrates by Using Microwave Plasma Heating and Fabrication of TFT’s on the Films
... hydrogen plasma. When transition metals were exposed to hydrogen plasma, the temperatures in- creased to above ...tungsten films deposited on amorphous silicon films on glass sub- ...
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Characterisation of thin film silicon films deposited by plasma enhanced chemical vapour deposition at 162MHz, using a large area, scalable, multi tile electrode plasma source
... 20% and at rates of up to 15Å/s. Of particular interest for this electrode topology is the material across the inter-tile gap. Here we present measurements of the deposition uniformity across the inter-tile gap as well ...
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Surface Passivation of Silicon Using HfO2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition System
... the c-Si substrate, forming an inter- facial layer [18, 19]. In Region C, when the etching time increased above 175 s, the Si signal drastically increased up to more than 60%, corresponding to the surface ...
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Thermochemical stability of silicon-oxygen-carbon alloy thin films: A model system for chemical and structural relaxation at SiC-SiO2 interfaces
... Thin films of hydrogenated ~ Si,C ! O x approximately 200 nm in thickness were deposited on fused quartz and high resistivity ~ 15 V cm ! p-type Si wafers in an ultrahigh vacuum ~ UHV ! multichamber ...
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Morphological, structural and photoresponse characterization of ZnO nanostructure films deposited on plasma etched silicon substrates
... deposited films. 300 W power of RF (13.56MHz) generator , for Plasma Enhanced Chemical Vapor Deposition (PECVD), has been employed to etch silicon substrates with two times (5 and 30 min) where the ...
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Automated control of plasma ion-assisted electron beam-deposited TiO2 optical thin films
... the plasma source cathode and anode regions. Other plasma source features include axially displaced anode and cathode electrodes with decoupled magnetic fields in the anode and cathode regions, enabling ...
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Synthesis of highly transparent ultrananocrystalline diamond films from a low pressure, low temperature focused microwave plasma jet
... the films [26]. The film grown at 30 Torr/460°C consisted of pure diamond nanocrystallites (3 to 8 nm) without any thermal damage to the substrate, which retained a high degree of diamond purity ...diamond ...
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DLC Film Fabricated by a Composite Technique of Unbalanced Magnetron Sputtering and PIII
... Chemical structure of the surface layer of the substrate was determined using Glancing X-ray diffraction analysis (GXRD), with Cu K α diffraction, voltage 40 kV, current 40 mA. Raman spectroscopy (EQUINO-X55 FT-Raman ...
5
Study of Iridium (Ir) Thin Films Deposited on to SiO2 Substrates
... Ir optical constants provided by other sources, taken on different sample forms (either bulk or thin films), and under different ambient conditions, can be found in the literature Palik's handbook in particular ...
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Synthesis and Characterization of Cu Doped TiO2 Thin Films to Protect Agriculturally Beneficial Rhizobium and Phosphobacteria from UV Light
... was deposited on ultra-cleaned glass substrates by dip coating process at room temperature with the drawing speed of 45 mm for 30 ...thin films of various thicknesses and named as C54, C74 and C94 ...
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The Effect of Deposition Temperature of Pb(Zr,Ti)O3(PZT)Thin Films with Thicknesses of around 100 nm on the Piezoelectric Response for Nano Storage Applications
... samples deposited to 300˚C show (001) preferred orientation because the intensity ratio values are high ...thin films deposited at various temperature (not heat-treated), and Figure 5 shows ...
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PEALD Grown Crystalline AlN Films on Si (100) with Sharp Interface and Good Uniformity
... thin films deposited at 300 °C with different thick- ...AlN films display a higher degree of crystallization with increasing of ...AlN films promote crystallization in (002) plane with ...
6