• No results found

resonant tunneling diode

GaAs based resonant tunneling diode (RTD) epitaxy on Si for highly sensitive strain gauge applications

GaAs based resonant tunneling diode (RTD) epitaxy on Si for highly sensitive strain gauge applications

... years, resonant tunneling diode (RTD) has attracted growing interest on the applications of highly sensitive strain ...the resonant tunneling current of the RTD tuned by the external ...

6

Effect of self assembled InAs islands on the interfacial roughness of optical switched resonant tunneling diode

Effect of self assembled InAs islands on the interfacial roughness of optical switched resonant tunneling diode

... Embedding a quantum dot [QD] layer between the double barriers of resonant tunneling diode [RTD] is proved to be an effective method to increase the sensitivity of QD-RTD single-photon detector. ...

5

Mid infrared GaSb based resonant tunneling diode photodetectors for gas sensing applications

Mid infrared GaSb based resonant tunneling diode photodetectors for gas sensing applications

... present resonant tunneling diode photodetectors with a GaAsSb/AlAsSb double barrier structure covering the fingerprint absorption region of various gases in the mid-infrared wavelength ...the ...

12

Photocurrent voltage relation of resonant tunneling diode photodetectors

Photocurrent voltage relation of resonant tunneling diode photodetectors

... the resonant tunneling diode (RTD) quantum efficiency gðVÞ, the lifetime of photogenerated and accumulated charge carriers sðVÞ, and the RTD current-voltage relation in the dark determines best ...

6

Sensitivity of resonant tunneling diode photodetectors

Sensitivity of resonant tunneling diode photodetectors

... RTD photocurrent‐voltage relation is a nonlinear function, which can be described by three voltage‐ dependent parameters: the RTD current‐voltage characteristics in the dark , the RTD quantum efficiency , and the mean ...

17

p type doped AlAsSb/GaSb resonant tunneling diode photodetector for the mid infrared spectral region

p type doped AlAsSb/GaSb resonant tunneling diode photodetector for the mid infrared spectral region

... A novel photodetector concept that provides gain at relatively small operating voltages is proposed, demonstrated, and examined. The investigated samples are based on p-type doped AlAsSb/GaSb DBQW RTDs with an integrated ...

29

Al-rich AlGaN/AlN-based double barrier resonant tunneling diodes

Al-rich AlGaN/AlN-based double barrier resonant tunneling diodes

... (TUNNETT) diode 105,106 , and resonant tunneling diode 107,108 (RTD) are utilized as oscillators for THz ...Gunn diode is below ...and tunneling for ...by resonant ...

231

Spin injection in n-type resonant tunneling diodes

Spin injection in n-type resonant tunneling diodes

... non-magnetic resonant tunneling diodes (RTDs) be- cause the spin polarization of carriers in the structure can be voltage-controlled which is very useful for device applications ...GaAs/AlGaAs ...

6

Cavity enhanced resonant tunneling photodetector at telecommunication wavelengths

Cavity enhanced resonant tunneling photodetector at telecommunication wavelengths

... GaAs/AlGaAs resonant tunneling diode (RTD) with GaInNAs absorption layer for telecommunication light sensing with a sensitivity of 10 3 A/W, with the RTD serving as internal am- plifier of weak ...

5

Tunneling Effects in DNA bases Adenine and Guanine

Tunneling Effects in DNA bases Adenine and Guanine

... as Resonant Tunneling Diode ...a resonant tunneling diode (RTD) [3] or a device with a negative differential molecular ...

5

Simulating nanoscale semiconductor devices

Simulating nanoscale semiconductor devices

... a resonant tunneling diode ...quantum tunneling effects present in an RTD can be exploited to induce and sustain THz frequency current ...

14

Design of Broadband Non-Foster Circuits based on Resonant Tunneling Diodes

Design of Broadband Non-Foster Circuits based on Resonant Tunneling Diodes

... A non-Foster circuit (NFC) based on the resonant tunneling diode (RTD) is proposed for application to broadband impedance matching of electrically small antennas (ESAs). NFCs have traditionally been ...

7

Room Temperature NDR Performance of GaInAs based SE-RTBT

Room Temperature NDR Performance of GaInAs based SE-RTBT

... emitter resonant tunneling bipolar transistor (SE-RTBT) is facing problem due to thermal transfer of electrons over barrier which causes diminishing negative differential resistance (NDR) ...Therefore ...

6

Efficient minimization Techniques for threshold Logic Gate

Efficient minimization Techniques for threshold Logic Gate

... (CTLG), resonant tunneling diode (RTD), single electronics transistor based threshold gate (SET), Charge Recycling (CR) CMOS threshold logic gate and Memristor Threshold Logic and also analysis ...

8

Generation and Shaping of Soliton Like Pulses along Resonant Tunneling Diodes NMOS Varactors Lattice

Generation and Shaping of Soliton Like Pulses along Resonant Tunneling Diodes NMOS Varactors Lattice

... underlying characteristic of the RTD is a nonlinear N- shaped current-voltage relationship with a negative dif- ferential resistance (NDR) in the active region even at millimetre wave frequencies. It is regarded as the ...

6

A New Active Soft Switching Technique for Pulse Width Modulated Full Bridge DC-DC Converters

A New Active Soft Switching Technique for Pulse Width Modulated Full Bridge DC-DC Converters

... off. Circuit conditions during this interval are depicted in Fig. 7. Resonant inductor current raises linearly during this interval until it reaches reflected load current in the primary. All the rectifier diodes ...

6

HIGH FREQUENCY SWITCHING OF MULTI SEGMENT PSEUDO RESONANT BOOST COVERTER FOR ELECTRIC DRIVES S. Vinod Kumar 1, Dr.S. Sujitha2

HIGH FREQUENCY SWITCHING OF MULTI SEGMENT PSEUDO RESONANT BOOST COVERTER FOR ELECTRIC DRIVES S. Vinod Kumar 1, Dr.S. Sujitha2

... Renewable energy sources, such as offshore wind farms, require high voltage gains in order to interface with power transmission networks. Previously, these conversions are normally made using bulky, complex, and costly ...

10

On the generalized Hartman effect presumption in semiconductors and photonic structures

On the generalized Hartman effect presumption in semiconductors and photonic structures

... To see the effect of varying the size of the SL on the PT, one has to be sure that such variation will still keep the wavelength inside a photonic band gap. It was shown that by increasing the number of cells, for fixed ...

6

The Analysis of Parameter Limitation in Diode-Clamped Resonant Gate Drive Circuit

The Analysis of Parameter Limitation in Diode-Clamped Resonant Gate Drive Circuit

... N megahertz frequency converter design, resonant gate drive (RGD) circuit network is normally chosen due to its ability in resulting lower power loss, high efficiency and speed. The effect of RGD on overall ...

6

Resonant two-site tunneling dynamics of bosons in a tilted optical superlattice

Resonant two-site tunneling dynamics of bosons in a tilted optical superlattice

... The presented result can be easily extended to the case of not only unit filling, but any uniform integer filling. The main difference in spin models then will be due to the Bose enhancement factor of tunneling ...

13

Show all 2670 documents...

Related subjects