Samples and thermal annealing
Synthesis of Antimony Telluride Thin Films by Thermal Annealing
... Figure 5 shows the result of resistivity measurement by four-probe apparatus within the range of 40-100°C. It reveals that all three types of thin films have low electrical resistivity in the range of 4X10 -5 Ω-m. for ...
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Investigation of phase transformations of iron nanoparticles during thermal annealing
... FeCl 2 + 2FeCl 3 + 8NH 3 · H 2 O → Fe 3 O 4 + 8NH 4 Cl + 4H 2 O 2 M FeCl 2 was dissolved in 2 M HCl, 1 M FeCl3 in a molar ratio of 1:2. To the resulting solution, 50 ml of NH 4 OH (0.7 M) was added dropwise through the ...
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Thermal annealing and evolution of defects in neutron-irradiated cubic SiC
... 3C-SiCn samples, the Т6 spectrum has a much shorter spin-lattice relaxation time and can be readily picked out at higher level of the microwave ...studied samples 3C-SiCn are observed along with several ...
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Morphological, chemical, and electronic changes of the conjugated polymer PTB7 with thermal annealing
... (C)). Thermal annealing was performed by placing samples directly on a hot plate at the appropriate annealing temperature (120, 260, or 290°C) for 10-15 ...minutes. Samples were cooled ...
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Isolated Cobalt Nanoparticles Prepared on HOPG in Ultrahigh Vacuum Using Thermal Annealing
... Different ways of evaporation are used to create the nec- essary concentration of metal vapors: laser ablation [10], thermal evaporation [11], arc discharge, and evaporation in the plasma [12]. However, the use of ...
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Effect of rapid thermal annealing on the electrical properties of dilute GaAsPN based diodes
... rapid thermal annealing on the electrical properties of p ++ GaP/p - GaAsPN/n + GaP diodes were investigated by using Current – Voltage (I-V), Capacitance-Voltage (C-V) and Deep Level Transient Spectroscopy ...
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Preparation of Indium Tin Oxide Thin Film by Rapid Thermal Annealing Treatment
... show samples of RTA treatedat different selected ...the annealing temperature increase, the particle size change and increase the crystal growth because of the decrease of defects, and this result is ...
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A novel method for biopolymer surface nanostructuring by platinum deposition and subsequent thermal annealing
... Pt/PLLA samples was studied with ...with annealing exhibits the advantage of the PLLA-metal composite preparation, which can be easily manufactured and ...
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Effect of Thermal Annealing on the Structural, Optical, and Electrical Properties of a-Se Thin Films
... the samples was done on glass substrates by thermal evaporation technique under pressure range 10-5 - 10-6 Torr at room ...different annealing temperatures (323, and ...
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Hardening of an Al0.3CoCrFeNi high entropy alloy via high-pressure torsion and thermal annealing
... further thermal processing. Thermal annealing was carried out at temperatures of 573, 673, 773, 873 and 973 K for 1 h; these HEA samples are referred to as NC-573, NC-673, NC-773, NC-873 and ...
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Effect of Post Thermal Annealing on the Optical Properties of InP/ZnS Quantum Dot Films
... probably due to the inter-diffusion of atoms near the core-shell interface and leads to the decrease of InP core. For peak A, it can be fitted well from 95 to 200 K. After 200 K, it shows an increasing red shift ...
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Rapid thermal annealing and crystallization mechanisms study of silicon nanocrystal in silicon carbide matrix
... Figure 4 compares the XRD spectra of the samples with different Si concentrations after 1,100 C annealing. All the annealed samples show clear Bragg peaks from Si and b -SiC crystallization. In ...
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Effect of thermal annealing and carbon implantation on the functional properties of nanocomposite TiSiN coatings on steel
... 152 occurred extensively in the TiSiN coatings. These cracks formed a passage for corrosive agents to move through the coatings, leading to severe corrosion damage in the substrates. Finite element analysis was carried ...
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Polycrystalline Silicon Solar Cells Fabricated by Pulsed Rapid Thermal Annealing of Amorphous Silicon
... "squareness". Table 1 shows that the solar cells with i-layer that deposited at these three conditions have smaller R Sh , which means that more photocurrent is lost due to recombination. The increased possibility of ...
111
Thermal annealing behaviour on electrical properties of Pd/Ru Schottky contacts on n-type GaN
... From Fig. 1, the reverse leakage current value at – 2 V for the as-deposited contact is measured to be 3.79 10 6 A. For the samples annealed at 200 C, 300 C, 400 C, 500 C and 600 C the reverse leakage current ...
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Electrical Characterisation Of Ion Implanted Semi Insulating Indium Phosphide And Optimisation Of Rapid Thermal Annealing
... RESULTS Tables 1 and 2 show the values of the sheet resistivity, carrier concentration, Hall mobility and electrical activation measured for S + implants of 6 x 10 13 cm -2 and 1x10 14 cm -2 respectively, under the ...
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Enhanced Photoelectrochemical Behavior of H TiO2 Nanorods Hydrogenated by Controlled and Local Rapid Thermal Annealing
... rapid thermal an- nealing (RTA) is a standard semiconductor processing tech- nique where the processing parameters can be precisely controlled by a PC [10, ...oxidation, annealing and ...gas ...
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Effects of rapid thermal annealing on device characteristics of InGaAs/GaAs quantum dot infrared photodetectors
... Rapid thermal annealing was per- formed on the samples at temperatures ranging from 650 to 800 ° C for 30 s under Ar ...During annealing, the samples were sandwiched between two fresh ...
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Annealing studies of detector materials for uncooled thermal imaging
... RTP in argon between 600°C and 675°C met with mixed success in terms of device survivability. At a hold temperature of 600°C electrical testing showed the devices to have survived undamaged for up to 30s, except for a ...
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Study of Annealing and Hydrogenation Effect on Bilayer Mg-Co Thin Film by Thermal Vacuum
... of annealing and hydrogen on electrical properties of bilayer Mg/Co thin ...using thermal evaporation method at pressure 10-5 torr and Annealing of bilayer structure had been performed in vacuum at ...
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