sapphire (100) substrate
Properties of GaN based light emitting diodes on patterned sapphire substrate coated with silver nanoparticles prepared by mask free chemical etching
... Figure 6 plots the light output power as a function of the injection current for the GaN-based LEDs with and without the PSS-ANP template. The light output power of all of the samples initially increased linearly with ...
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A Study of Specific Down Force Energy and Cutting Depth of Sapphire Substrate Affected by Different Dipping Temperatures of Slurry
... used, Sapphire substrates were used as the experimental material (diameter: ...the sapphire substrate for observation. The sapphire substrate surface configuration was measured before ...
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Growth and Fabrication of GaN/InGaN Violet Light Emitting Diode on Patterned Sapphire Substrate
... of 100 mA, the light output from the LEDs on PSS was ...of sapphire substrate provides different escape angles to light which results in higher light extraction ...
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High Responsivity in GaN Ultraviolet Photodetector Achieved by Growing on a Periodic Trapezoid Column-Shape Patterned Sapphire Substrate
... patterned sapphire substrate using metalorganic chemical vapor ...patterned sapphire substrate exhibits a lower dark current, a higher photocurrent, and a 476 % enhancement in the maximum ...
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Reduction of dislocation density of aluminium nitride buffer layer grown on sapphire substrate
... sapphire substrate. The Al polarity area is increasing compared to the N polarity area. We can also observe a threading dislocation line intersecting the inversion domain grain boundary, as shown in the BF ...
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Omnidirectional whispering gallery mode lasing in GaN microdisk obtained by selective area growth on sapphire substrate
... It is worth noting that, below the lasing threshold, two modes are located at 372.3 and 373.9 nm independently. However, the two modes merge into one sharp peak, and the relative intensity of the 373.9 nm mode is ...
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Efficiency improvement of GaN based ultraviolet light emitting diodes with reactive plasma deposited AlN nucleation layer on patterned sapphire substrate
... patterned sapphire substrate were flip chip bonded onto silicon submount by using Panasonic ultrasonic flip chip bonder (Panasonic, Kadoma, Osaka, ...
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Effects of Growth Conditions on Structural Properties of ZnO Nanostructures on Sapphire Substrate by Metal–Organic Chemical Vapor Deposition
... ratio on the ZnO structural properties were discussed. It was found that the chamber pressure has significant effects on the morphology of ZnO and could result in various structures of ZnO including pyramid-like, ...
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Study of the Dislocation and Luminescence Intensity Distributions of Gallium Nitride LED on the Carbon-Nanotubes Patterned Sapphire Substrate
... effectively reduced by various techniques [4-6]. The epitaxial lateral overgrowth (ELOG) technology developed by Kato et al. is an efficient method to eliminate the density of dislocation with a patterned dielectric mask ...
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Nanomechanical probing of the layer/substrate interface of an exfoliated InSe sheet on sapphire
... a sapphire substrate and to measure the values of f and Q for the nanomechanical acoustic phonon ...the substrate: we find that, acoustically, InSe layers with a thickness between 50 and 120 nm ...
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Structural, morphology and optical properties of Zn(1-x)CdxO solid solution grown on c-plane sapphire substrate
... plane sapphire substrates for the different flux ratios ...plane sapphire substrate as a function of the photon energy estimated by extrapolating linear part of ( α E) 2 to ...
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Substrate Free InGaN/GaN Nanowire Light Emitting Diodes
... encapsulated into PDMS layer. After metal deposition to p-GaN, a thick PDMS cap layer was spin-coated and the membrane was manually peeled from the sapphire substrate, flipped upside down onto a steel ...
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Optoelectronic Properties of GaN Based Light Emitting Diodes with Different Mesa Structures
... insulating sapphire substrate, so their P and N electrodes are on one side, which inevitably produce current crowd- ing effect [6-9] and result in an uneven distribution of current ， serious heating effect, ...
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High temperature MBE of graphene on sapphire and hexagonal boron nitride flakes on sapphire
... In this work, we investigated growth by MBE of graphene layers at extremely high substrate temperatures. The stand- ard dual chamber GENxplor was specially modified by Veeco to achieve growth temperatures of up to ...
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Carrier dynamics in InGaN/GaN on the basis of different In concentrations
... Abstract: InGaN/GaN samples grown on c-plane sapphire substrate with different In concentrations by metal organic chemical vapor deposition are demonstrated. The subsequent capping GaN layer growth opens a ...
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Metal organic vapour phase epitaxy growth of GaN wires on Si (111) for light emitting diode applications
... rocking (ω) scans. Figure 2a shows the Θ-2Θ diffraction pattern of the as-grown samples with a cobalt radiation source. The GaN (0001), AlN (0001) and Si (111) Bragg peaks are indexed, indicating a GaN wire growth ...
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High temperature MBE of graphene on sapphire and hexagonal boron nitride flakes on sapphire
... In this work, we investigated growth by MBE of graphene layers at extremely high substrate temperatures. The stand- ard dual chamber GENxplor was specially modified by Veeco to achieve growth temperatures of up to ...
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Synthesis and Characterization of GaN Rods Prepared by Ammono Chemical Vapor Deposition
... ove 500 nm was observed and assigned to defect-rich crystallites [24,25]. The broad band is composed of yel- low luminescence (YL) and red luminescence (RL). The former is caused by gallium vacancies while the red lu- ...
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Silicon self-assembled nanodots fabricated using a radio-frequency magnetron sputtering method
... Silicon nanodot is a promising nanostructured material for future single-electron devices in nanoelectronic system. The self-assembly growth of silicon nanodots on sapphire substrate was investigated, with ...
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Effect of Annealing Temperature and Atmosphere to Surface Solid Phase Reaction of Sapphire Substrates and Spin Coated Copper Nitrate Gel Films
... The structural properties of the films were analyzed using X-ray diffraction (XRD; D8 Discover, Bruker) in θ - 2 θ mode with Cu K α radiation. A Ni filter with a thickness of 0.12 mm was used to avoid observation of the ...
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