Schottky barriers
Analysis of thermionic emission from electrodeposited Ni–Si Schottky barriers
... Ni–Si Schottky barriers are fabricated by electrodeposition using n on n + Si ...high-quality Schottky barrier with extremely low reverse leakage current is ...a Schottky barrier proposed by ...
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Schottky Barriers on Layered Anisotropic Semiconductor – WSe2 – with 1000 Å Indium Metal Thickness
... A model that physically justifies the temperature de- pendence of Schottky barriers is that proposed by Werner and Guttler [23]. This model assumes a spatial distribu- tion of the barrier height as ...
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Schottky Barriers Based on Nanoporous InP with Gold Nanoparticles
... causing an enhancement of many photophysical phe- nomena such as photoluminescence, infrared absorption, Raman scattering [10], and photocurrent of barrier structures (plasmonic photovoltaics) [11]. A photoelec- tric ...
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Graphite/InP and graphite/GaN Schottky barriers with electrophoretically deposited Pd or Pt nanoparticles for hydrogen detection
... Hydrogen detection performance of the diodes was measured by the time response of current after the ex- posure to hydrogen. The curve of the increasing current of a forward-voltage-biased diode was measured as a function ...
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Mechanism and control of current transport in GaN and AlGaN schottky barriers for chemical sensor applications
... For AlGaN/GaN based devices, there are some reports that show surface plays a key role in Schottky gate formation, control of carrier concentration in 2DEG layer, properties of passivati[r] ...
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Investigation of the Electronic -Properties of Al-CdTe-Au Schottky Diode
... The layers of aluminum were deposited by thermal vacuum evaporation using Balzer's coating unit model (BL 510) at pressure less than 10 -5 mbar on glass substrate with a thickness 200nm. The evaporation process was ...
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Some Electronic Properties of ZnO and SrTiO^3
... palladium, copper, and indium Schottky barriers were examined using photo- response, forward current versus voltage characteristics, thermal acti- vation energy, and c[r] ...
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The Role of Air Adsorption in Inverted Ultrathin Black Phosphorus Field Effect Transistors
... to Schottky barriers [15, ...then Schottky barriers are formed and conse- quently a small current; however, with the re-adsorption of the metastable oxygen on the BP surface, the p-type ...
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Schottky Field Effect Transistors and Schottky CMOS Circuitry
... MOSFET]), Schottky diodes, as opposed to p-n diodes in conventional MOSFETs, exist which inhibit current ...large Schottky barrier heights to electrons ( φ Bn ), tunneling current is the dominant current ...
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Modelling the inhomogeneous SiC Schottky interface
... Schottky barriers, formed at the interface between a metal and a low-doped semiconductor, are easily formed and highly prevalent, occurring in numerous electronic ...The Schottky diode operates with ...
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Junction investigation of graphene/silicon Schottky diodes
... the Schottky barriers between graphene and silicon have not been studied ...The Schottky barriers have been observed at bulk, highly ordered pyrolytic graphite/ silicon interfaces [10], but no ...
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What Do We Know About Technical Assistance? Enhancing the Science and Practice of Technical Assistance via a Research Synthesis
... work, Schottky barrier radiation detectors were fabricated on high quality n-type 4H-SiC epitaxial ...The Schottky barriers were formed on the epitaxial layers (Si-face) by depositing thin (~10 nm) ...
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Metal silicide/poly Si Schottky diodes for uncooled microbolometers
... Si Schottky barriers for the formation of sets of temper- ature sensors on bolometer membranes ...[8,10]. Schottky barrier bolometer arrays seem to be first proposed the- oretically for very sensitive ...
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Solution processed germanium nanowire positioned Schottky solar cells
... GeNW-positioned Schottky solar ...A Schottky contact between metal and a single GeNW was formed using asymmetric metal electro- des, and the photoresponse was demonstrated under laser ...GeNW ...
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Pressure contact multi chip packaging of SiC Schottky diodes
... II. P ROTOTYPE FOR EVALUATION OF PRESSURE CONTACTS A. Prototype design and single chip module characterization A multiple chip prototype for the evaluation of SiC using pressure contacts is shown in Fig. 1. The chip ...
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ELECTRICAL CHARACTERIZATION OF CHROMIUM/4H-SIC SCHOTTKY BARRIER DIODES
... to Schottky contacts have been carried out during the last two decades [4-10], the current transport and the temperature dependence of the barrier height in 4H-SiC Schottky diodes remain a topic of current ...
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Modeling of Sic Power Semiconductor Devices For Switching Converter Applications
... Thanks to recent progress in SiC technology, SiC JFETs, MOSFETs and Schottky diodes are now commercially available from several manufactories such as Cree, GeneSiC and Infineon. SiC devices hold the promise of ...
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Design, fabrication and characterization of gallium nitridebased circular schottky diode for hydrogen sensing
... MOS capacitors or FETs using Si-based material can be made as a gas sensor by using catalytically active materials as Schottky gate contacts [8]. However, in view of practical applications, there is a severe ...
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Schottky barrier height and electron affinity of titanium on AIN
... The III-nitride wide band gap semiconductors of AlN– GaN–InN have been considered for a wide range of elec- tronic and optoelectronic applications. Of this group, AlN exhibits the largest band gap with a value of 6.2 eV. ...
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Scalability of Schottky barrier metal-oxide-semiconductor transistors
... low Schottky barrier height ...erbium-silicided Schottky diode characteristics, incorporating trap states with Schottky barrier height and their effects on the elec- trical characteristics of ...
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