self-assembled InAs quantum dots
Electron and hole storage in self-assembled InAs quantum dots
... We present results on optically induced storage of electrons or holes in self-assembled InAs quantum dots (QDs). The measurements demonstrate that, following resonant photo-excitation ...
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Spin effects in InAs self assembled quantum dots
... semiconductor quantum dots (QDs) are also of high interest because electron spins can be used as a quantum bit [5] for quantum computing [6] and quantum communication ...with ...
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In situ accurate control of 2D 3D transition parameters for growth of low density InAs/GaAs self assembled quantum dots
... density self-assembled InAs ...sacrificial InAs layer to de- termine in situ the 2D-3D critical condition as a spotty pattern appears in ...the InAs sacrificial layer at 610°C, the ...
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Temperature dependence of the photoluminescence of self assembled InAs/GaAs quantum dots in pulsed magnetic fields
... simple model enabling us to extract information about the exciton wave-function. Our data clearly indicate a distinction between two different temperature regimes. At lower tem- peratures 共T ⬍ 80 K兲, the PL energy shift ...
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Analysis of the 3D distribution of stacked self assembled quantum dots by electron tomography
... surface amorphous layer. We have previously reported in detail the procedure to fabricate such needles from semiconductor materials [23]. In short, the method con- sists on protecting the surface of the bulk material by ...
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Terahertz optical sideband emission in self-assembled quantum dots
... nominally InAs self-assembled QDs separated by 50 nm wide GaAs barriers, thus preventing both structural and electronic coupling between the ...The dots are populated with electrons ...
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Wetting layer evolution and its temperature dependence during self assembly of InAs/GaAs quantum dots
... The commonly accepted thermodynamic understand- ing of the SK mode describes the QD formation on top of a WL of a certain thickness. However, it is not accur- ate in real situations. It has been reported that in the ...
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Optical characterization of In flushed InAs/GaAs quantum dots emitting a broadband spectrum with multiple peaks at ~1 μm
... In-flushed InAs quantum dots (QDs) grown on a GaAs substrate by molecular beam ...of self-assembled InAs QDs, we have tuned the emission wavelength of InAs QDs to the ~1 μ ...
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Probing the carrier transfer processes in a self assembled system with In0 3Ga0 7As/GaAs quantum dots by photoluminescence excitation spectroscopy
... of InAs QDs [12]; (v) growth on high-index-oriented GaAs substrate [13]; (vi) growth of InGaAs/GaAs quantum dot chains [14,15]; (vii) growth of strongly elongated InAs QDs on InP substrate ...of ...
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Growth parameters of InAs/GaAs quantum dots grown by MOVPE
... term quantum dot (QD) refers to zero dimensional structures that possess superior transport and optical ...the quantum well, the superior attributes of the quantum dot has encouraged further research ...
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AN EVALUATION OF ELECTRON ENERGY LEVELS IN A TRANSVERSE MAGNETIC FIELD FOR INAS/INP AND SELF-ASSEMBLED QUANTUM WIRES
... with quantum confined electronic states are probably uses in ...Low-dimensional quantum nano structured such as quantum well (QW), quantum wire (QWR) and quantum dots (QD) have ...
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Quantum box energies as a route to the ground state levels of self-assembled InAs pyramidal dots
... an improvement to the one, calculated by means of a differ- ent approach, reported in a previous article 16 !, and a 5 1 for the heavy holes. In this particular case ~i.e., Q 5 1), the heavy-holes ground state energies ...
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Symmetry of k·p Hamiltonian in pyramidal InAs/GaAs quantum dots: Application to the calculation of electronic structure
... pyramidal self-assembled InAs/GaAs quantum dots for different values of the period of the structure and in the presence of an external axial magnetic ...
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Effect of an in situ thermal annealing on the structural properties of self assembled GaSb/GaAs quantum dots
... the quantum dots which are near the surface of our ...in InAs/GaAs QDs has shown to reduce the density of threading dislocations and to have some effect on the size of the nanostructures ...
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Optical Properties of GaAs Quantum Dots Fabricated by Filling of Self Assembled Nanoholes
... on self-assembling mechanisms during epitaxial growth allow the integration of QD layers into semiconductor ...strain-induced InAs QDs grown on GaAs in the Stranski– Krastanov mode ...for ...
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Estimation of the Number of Quantum Dots Immobilized on an Ultra flat Au Surface
... The actual areas on which the QDs were immobilized were larger than the designed sizes of the dot, because of an overdose of the electron beam. In Fig. 5c, for exam- ple, although the designed size was 500 nm, QDs were ...
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Growth kinetics of MPS capped CdS quantum dots in self assembled thin films
... of quantum dots increases with the increasing heat treatment temperature and that small nanocrystals are dissolved with the in- creasing heat treatment temperature, and they are rede- posited on the larger ...
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Silicon self-assembled growth of quantum dots grown on corning glass (7059) substrate
... silicon quantum dot formation can be well described using a modification of the growth mode, with parameters predicted from the ...basic quantum dot structures. This self-assembly method can be ...
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Radiative Recombination Mechanisms of Large InAs/GaAs Quantum Dots
... The two samples analyzed here were grown in a Gen II MBE system on a semi-insulating GaAs (001) substrate. The first of them consists of 300 nm of GaAs buffer layer deposited at 580˚C followed by 2.4 monolayers (MLs) of ...
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Light scattering from solid-state quantum emitters: Beyond the atomic picture
... single quantum emitter is one of the fundamental processes of quantum ...in self-assembled quantum dots (QDs) [3–6], coherent scattering attracts interest as the scattered light ...
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