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Semiconductor nanowires

Stable defects in semiconductor nanowires

Stable defects in semiconductor nanowires

... Semiconductor nanowires are commonly described as being defect-free due to their ability to expel mobile defects with long-range strain ...in semiconductor nanowires in regions of imperfect ...

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Transfer printing of semiconductor nanowires with lasing emission for controllable nanophotonic device fabrication

Transfer printing of semiconductor nanowires with lasing emission for controllable nanophotonic device fabrication

... Semiconductor nanowires (NW) have revolutionized the field of photonics allowing a wide range of novel ultra-small devices with key impact across scientific disciplines, ...of semiconductor NWs, ...

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Novel optoelectronic devices based on single semiconductor nanowires (nanobelts)

Novel optoelectronic devices based on single semiconductor nanowires (nanobelts)

... Semiconductor nanowires (NWs) or nanobelts (NBs) have attracted more and more attention due to their potential application in novel optoelectronic ...– semiconductor field-effect transistor (MESFET) ...

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Semiconductor Nanowires: Optical Properties and All-Optical Switching

Semiconductor Nanowires: Optical Properties and All-Optical Switching

... Semiconductor nanowires, one-dimensional semiconductor structures with nanometer-scale dimensions, have received significant attention in the last ...making nanowires the ideal morphology for ...

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Diameter Dependent Ultrasonic Characterization of InAs Semiconductor Nanowires

Diameter Dependent Ultrasonic Characterization of InAs Semiconductor Nanowires

... InAs semiconductor nanowires at the room ...InAs nanowires validating the interaction poten- tial ...the nanowires are determined using the elastic constants for different diameters of the ...

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Synthesis of long group IV semiconductor nanowires by molecular beam epitaxy

Synthesis of long group IV semiconductor nanowires by molecular beam epitaxy

... Semiconductor nanowires (NWs) consist of a solid rod with a diameter usually smaller than 100 nm and a length that can vary from the nanometer to the milli- meter-scale depending on the technique used to ...

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Determining factors of thermoelectric properties of semiconductor nanowires

Determining factors of thermoelectric properties of semiconductor nanowires

... of semiconductor heterostructures and nanostructures can significantly improve their thermoelectric ...ZnO nanowires and 20 times in 12-Å-diameter Si nanowires, compared with the ...of ...

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Growth of High Material Quality Group III Antimonide Semiconductor Nanowires by a Naturally Cooling Process

Growth of High Material Quality Group III Antimonide Semiconductor Nanowires by a Naturally Cooling Process

... InSb nanowires using a sophisticate tech- nique such as MOVPE or CBE is normally very small and is hard to control, the heating temperature and heating period can be tuned in a wide range for the growth of InSb ...

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Coupling of Semiconductor Nanowires with Neurons and Their Interfacial Structure

Coupling of Semiconductor Nanowires with Neurons and Their Interfacial Structure

... Semiconductor nanowires have high aspect ratio, high surface area, and single crystallinity and thus are ideal building blocks for many devices on a nanometer scale [1, ...of nanowires with neurons ...

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Interface Engineering to Control Charge Transport in Colloidal Semiconductor Nanowires and Nanocrystals

Interface Engineering to Control Charge Transport in Colloidal Semiconductor Nanowires and Nanocrystals

... I would not be here writing this thesis if it were not for the support of many, very patient and dedicated people. My first thanks goes to my adviser, Cherie Kagan. I’m not sure she knew how much work I would be, so I am ...

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Semiconductor nanowires self assembled from colloidal CdTe nanocrystal building blocks: optical properties and application perspectives

Semiconductor nanowires self assembled from colloidal CdTe nanocrystal building blocks: optical properties and application perspectives

... The authors are deeply indebted to all the colleagues and collaborators who have contributed to the work on semi- conductor nanowires discussed in this article, and in particular to Jianhong Zhang, Andrey A. ...

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Advances in Crystal Growth and Assembly for Imparting Novel Photonic Properties to Semiconductor Nanowires

Advances in Crystal Growth and Assembly for Imparting Novel Photonic Properties to Semiconductor Nanowires

... example, semiconductor, metal or dielectric) or origin of the one-dimensional substrate (vapor – liquid – solid (VLS) grown, top-down etched, and so on) and independent of the shell deposition process (chemical ...

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Nonradiative step facets in semiconductor nanowires

Nonradiative step facets in semiconductor nanowires

... of nanowires for functional applications is their high perfection, which results from surface image forces that act on line defects such as dislocations, rendering them unstable and driving them out of the ...in ...

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Tunneling magnetoresistance in Si nanowires

Tunneling magnetoresistance in Si nanowires

... Fortunately, the problem of the spin polarization of the electrodes can be circumvented by an appropriate tunnel barrier choice. In fact, in crystalline insulators the exponential decay of the wave function of the ...

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Indium Antimonide Nanowires: Synthesis and Properties

Indium Antimonide Nanowires: Synthesis and Properties

... the approaches used for growing InSb nanowires use InAs or other semiconductor nanowires as stems. In this way, a recent approach study was published on the strain relaxation mechanism on such ...

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Hydrothermal Synthesis and Properties of Diluted Magnetic Semiconductor Zn1 xMnxO Nanowires

Hydrothermal Synthesis and Properties of Diluted Magnetic Semiconductor Zn1 xMnxO Nanowires

... and grows along the [0001] orientation. The presence of Mn in the lattice was confirmed by the EELS measure- ment, the spectrum shows that Zn and Mn coexist along with O (Figure 3(b)). The Mn-L3/L2 intensity ratio in- ...

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Power semiconductor device

Power semiconductor device

... H. Shinohara et al.: “Si metal-oxide-semiconductor field-effect transistor on Si-on-SiC directly bonded wafers with high thermal conductance”, Applied Physics Letters, volume 93, page 122110 (2008) and Y. Sasada ...

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Selective Synthesis of Fe2O3 and Fe3O4 Nanowires Via a Single Precursor: A General Method for Metal Oxide Nanowires

Selective Synthesis of Fe2O3 and Fe3O4 Nanowires Via a Single Precursor: A General Method for Metal Oxide Nanowires

... nanowires with the diameter of about 100 nm and the length of tens of micrometers have been selectively synthesized by a microemulsion-based method in combination of the calcina- tions under different atmosphere. ...

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SEMICONDUCTOR TECHNICAL DATA

SEMICONDUCTOR TECHNICAL DATA

... • Temperature Hysteresis: Output deviation at any temperature within the operating temperature range, after the temperature is cycled to and from the minimum or maximum operating temper[r] ...

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Semiconductor Business Presentation

Semiconductor Business Presentation

... and high image quality Technology fostered with leading Technology fostered with leading process development and production process development and production. Technology for:[r] ...

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