Si substrate
Probability of twin formation on self catalyzed GaAs nanowires on Si substrate
... We attempted to control the incorporation of twin boundaries in self-catalyzed GaAs nanowires (NWs). Self-catalyzed GaAs NWs were grown on a Si substrate under various arsenic pressures using molecular beam ...
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Controllable synthesis of ZnO nanostructures on the Si substrate by a hydrothermal route
... bare Si substrate, on the Si sub- strate coated with seed layer deposited by RF magnetron sputtering (40 nm in thickness), and on the Si substrate coated with seed layer deposited by ...
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Growth and characterization of TiO2 nanotubes from sputtered Ti film on Si substrate
... synthesis. Si wafer with approximately 650-nm-thin Ti film was diced into 1 × 2-cm-sized ...The Si is electrically isolated due to the thermally grown SiO 2 , and hence, the Si substrate ...
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Monolithically multi-color lasing from an InGaN microdisk on a Si substrate
... In this study, we demonstrate a monolithic multi-color laser optically pumped at room temperature with a low threshold from a single InGaN microdisk on a Si substrate, which has never been achieved in the ...
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Microstructure and adhesion characteristics of a silver nanopaste screen printed on Si substrate
... transmission electron microscope [TEM] (JEOL Ltd., Akishima, Tokyo, Japan). Two types of thermal analysis were performed on the Ag nanopaste: differential scanning calorimeter [DSC] and thermo-gravimetric analysis [TGA]. ...
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STEM Moiré Observation of Lattice Relaxed Germanium Grown on Silicon
... the Si substrate. The Si there and the high-angle-annular-dark-filed (HAADF) STEM image (Figure 3) suggests that the Ge film is compositionally ...
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1 Room-Temperature H 2Gas Sensing Characterization
... porous silicon (G-doped/p-Si) substrate are investigated utilizing graphene as a catalyst material.. 56.[r] ...
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Growth of GaN nanowall network on Si (111) substrate by molecular beam epitaxy
... [11,12], ZnO [13,14], and NiO [15] nanowalls have been investigated. Kesaria et al. reported the growth of a GaN nanowall network on a sapphire substrate [16-18]. In these papers, transformation among the GaN ...
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Mercury Cadmium Telluride (HgCdTe) pin Photodetector on Si/SOI Substrate
... on Si involved growing CZT buffer layers by molecular beam epitaxy (MBE) for liquid phase epitaxy (LPE) MCT ...on Si, but poor morphology and reproducibility has so far prevented this from becoming a viable ...
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Dynamics of Optically Generated Carriers in Si (100) and Si (111) Substrate Grown GaAs/AlGaAs Core Shell Nanowires
... THz-TDS measurements were performed to shed light on the drift of photoexcited carriers by the surface deple- tion field. The logarithmic THz emission spectra and the corresponding time domain data (inset) generated from ...
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Silicon Nanostructures Produced by Modified MacEtch Method for Antireflective Si Surface
... This work pertains to the method for modification of silicon (Si) wafer morphology by metal-assisted chemical etching (MacEtch) technique suitable for fabrication of antireflective Si surfaces. For this ...
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Enhancement of intrinsic emission from ultrathin ZnO films using Si nanopillar template
... on Si substrates were harvested by carrying out rf sputtering for 10 s, as shown in Figure ...the Si nanopillars are created by a subsequent dry etching ...the Si nanopillars obtained from the ...
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The Effects of Fabrication Prameters and Electroforming Phenomenon on CdTe/Si (p) Heterojunction Photovoltaic Solar Cell
... on Si substrate by molecular beam epitaxy has been reported, which indicates that II-VI semiconductor alloys based on CdTe and grown on Si substrates may give good cell performance ...n-type ...
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Dielectric properties of porous silicon for use as a substrate for the on chip integration of millimeter wave devices in the frequency range 140 to 210 GHz
... porous Si (por- osity and morphology) with its dielectric properties and we will compare them with results obtained by a broad- band extraction method, based on the measurement of the S-parameters of coplanar ...
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Interfacial strain-induced self-organization in semiconductor dielectric gate stacks. I. Strain relief at the Si-SiO2 interface
... the Si substrate, and second, their number can be reduced by more than a factor of 50 by a postmetallization anneal 共 PMA 兲 in a hydrogen-containing ...the Si forbidden band gap that are revealed by ...
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Nanogrids and Beehive Like Nanostructures Formed by Plasma Etching the Self Organized SiGe Islands
... the Si substrate and that of the SiGe thin film are in perfect alignment, indicating that the SiGe thin film is completely commensurate with the Si ...and substrate are very narrow, indicative ...
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Characterization of photovoltaics with In2S3 nanoflakes/p Si heterojunction
... p-Si substrate exhibit a rough surface. The EDS line pro- files indicate that the film consists of indium and sulfur. The atomic concentrations of In = 56.6% and S = 43.4% are calculated from the EDS ...
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Annealing effect and photovoltaic properties of nano ZnS/textured p Si heterojunction
... p-Si substrate was studied for the first time in this ...p-Si substrate. Jiang et al. [16] fabricated SnS/α-Si hetero- junction photovoltaic devices, and the junction exhibited a ...
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Silicon diffusion control in atomic layer deposited Al2O3/La2O3/Al2O3 gate stacks using an Al2O3 barrier layer
... ment. The cross-sectional HRTEM images for annealed samples S1 and S4 are displayed in Figure 3. Both of the films exhibit an amorphous structure up to an annealing temperature of 700°C [17]. Compared with Figure 3b, a ...
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Design and fabrication of silicon on silicon carbide substrates and power devices for space applications
... (Si/SiC) substrate solution promises to combine the benefits of silicon-on-insulator (SOI) technology ...hybrid Si/SiC substrate show that the high thermal conductivity of the SiC offers a ...
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