Silicon and Germanium
Temperature-dependent refractive index of silicon and germanium
... and germanium are perhaps the two most well-understood semiconductor materials in the context of solid state device technologies and more recently micromachining and ...using silicon and germanium at ...
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Revising morphology of 〈111〉-oriented silicon and germanium nanowires
... Figure 6 The surface energy of the Si(011), Si(112), Ge(011) and Ge(112) surfaces versus the in-plane lattice parameter (or strain ε ). “additional space” at edges. It is also not necessary to siz- ably change a in order ...
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A Chlorine-Free Protocol for Processing Silicon, Germanium, and Tin
... for germanium, high dispersion in the environment making extraction of the element ...of germanium metal or tin metal to element tetrachloride ...replaces germanium tetrachloride and tin ...
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Silicon and Germanium Nanostructures for Photovoltaic Applications: Ab Initio Results
... Received: 16 June 2010 / Accepted: 1 July 2010 / Published online: 18 July 2010 Ó The Author(s) 2010. This article is published with open access at Springerlink.com Abstract Actually, most of the electric energy is being ...
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Measuring Silicon and Germanium Band Gaps using Diode Thermometers
... Semiconductors are an integral part of modern elec- tronic devices. From computers and cellphones to cal- culators and digital watches, almost all the technology we use in our every day lives is associated with a semi- ...
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Silicon and Germanium Nanostructures for Photovoltaic Applications: Ab-Initio Results
... Abstract Actually, most of the electric energy is being produced by fossil fuels and great is the search for viable alternatives. The most appealing and promising technology is photovoltaics. It will become truly ...
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Investigating the Influence of Doping Graphene with Silicon and Germanium on the Adsorption of Silver (I)
... Then, IR and frontier molecular orbital calculations were implemented on them and some important parameters such as adsorption energy, Gibbs free energy changes, enthalpy variations, the thermodynamic equilibrium ...
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Comparative Study of Silicon and Germanium Doping-less Tunnel Field Effect Transistors
... need for any doping, the source and drain regions are formed by choosing appropriate work functions for the source and drain metal electrodes. It requires only a low thermal budget. The ON state current can be improved ...
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Oxidation of Germanium and Silicon surfaces (100): a comparative study through DFT methodology
... into germanium surface. Germanium results will be compared to previous conclusions relative to the stability of Si and SiGe oxidized structures having one and two oxygen atoms incorporated in similar ...
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Transport in silicon germanium heterostructures
... of silicon-germanium research, the highest mobilities have been observed in systems with relatively low sheet carrier densities, meaning that the overall con- ductivity of the system is not necessarily ...
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Quantitative Evaluation of an Epitaxial Silicon Germanium Layer on Silicon
... of silicon-germanium on a silicon substrate (Si x Ge y /Si) have been investigated and successfully applied in complementary metal oxide semiconductors (CMOS) [1] [2], sensors [3], photodetectors and ...
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MATHEMATICAL MODELING OF THE DISSOLUTION PROCESS OF SILICON INTO GERMANIUM MELT
... The silicon source placed at the top of the melt dissolves under the applied temperature profile into the germanium melt in the opposite direction to the gravity-induced buoyancy ...the silicon ...
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Characteristic and analysis of silicon germanium material as MEMS pressure sensor
... The silicon based pressure sensor is one of the major applications of the piezoresistive ...a silicon based piezoresistive pressure ...poly-Silicon Germanium in which germanium is about ...
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Polycrystalline Silicon Germanium Emitters for Gain Control, With Application to SiGe HBTs
... Steven Hall (M’93) received the Ph.D. degree in integrated injection logic in the GaAs/AlGaAs materials system from the University of Liverpool, U.K., in 1987. He then joined the lecturing staff, University of Liverpool, ...
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Nonlinear photonics in silicon germanium waveguides for mid-infrared supercontinuum generation
... In the third chapter, we actually demonstrated the high-coherence of an octave-spanning mid-IR supercontinuum generated in our silicon germanium-on-silicon integrated platform. The coherence property ...
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The development and optimization of potential germanium on silicon single photon avalanche diodes
... using Germanium and especially Silicon, is the low cost in production and the obvious compatibility when integrating these devices onto other platforms which will generally also be Silicon ...a ...
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Properties and benefits of fluorine in silicon and silicon-germanium devices, Journal of Telecommunications and Information Technology, 2007, nr 2
... the silicon-germanium layer that has been attributed to vacancy-fluorine ...the silicon-germanium layer. When applied to silicon bipolar transistors, fluorine has delivered a record f T ...
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High performance planar germanium-on-silicon single-photon avalanche diode detectors
... all- silicon devices operating at shorter ...planar germanium-on-silicon (Ge-on-Si) single-photon avalanche diode (SPAD) detectors for short- wave infrared ...
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Developing radiation hardening by design methodologies for single event mitigation in silicon-germanium bicmos technologies
... total germanium content and buffer layer thicknesses), films will relax forming misfit dislocations within the film that are unsuitable for transistor operation as illustrated in Figure ...the ...
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The high pressure phase transformations of silicon and germanium at the nanoscale
... 1.1.1 Silicon The series of known high pressure induced phase transformations in Si is shown in Fig. 1.2. Subjecting dc-Si, to ∼11.3 GPa of pressure causes it to phase transform to the metallic β-Sn structure. ...
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