[PDF] Top 20 Optoelectronic Control of the Phase and Frequency of Semiconductor Lasers
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Optoelectronic Control of the Phase and Frequency of Semiconductor Lasers
... multiple lasers so that the total chirp bandwidth to the sum of chirp bandwidths of the individual ...a phase-coherent continuous-frequency wideband ...the frequency sweep, enabling a much ... See full document
214
The Coherence Collapse Regime of High Coherence Si/III V Lasers and the Use of Swept Frequency Semiconductor Lasers for Full Field 3D Imaging
... the frequency of the lasing mode can be found by considering the resonator as possessing two frequency de- pendent mirrors on the output ...the phase matching condition of the mode gap resonator, the ... See full document
133
Phase-locked arrays of surface-emitting graded-photonic-heterostructure terahertz semiconductor lasers
... the phase of each radiating antenna is directly linked to the phase of the supplied current ...Phasing optoelectronic devices operating at optical/infrared wavelengths is far more complex, however, ... See full document
8
Optical phase-lock loops using semiconductor lasers
... the phase of the current at each element of the array determine the pattern of the radiated beam, while the number of elements sets the resolution of the ...and phase to achieve the required ...good ... See full document
174
Studies on the Effective Physical Parameters for Chirp Reduction in Optical Injection Locked Semiconductor Lasers
... lasing frequency to the ML ...injection-locked semiconductor lasers has been theoretically ...of semiconductor lasers are ...in lasers rate equation. Then, the effects of ... See full document
5
The Optoelectronic Swept-Frequency Laser and Its Applications in Ranging, Three-Dimensional Imaging, and Coherent Beam Combining of Chirped-Seed Amplifiers
... a frequency chirp, the light undergoes unde- sired amplitude ...perature control and heat ...amplitude control and optical amplification of the weak VCSEL output, and reserve the use VOAs for ... See full document
177
Hu, Yinghong (2018): Moisture stability of hybrid perovskite solar cells. Dissertation, LMU München: Fakultät für Chemie und Pharmazie
... the phase purity regarding n is important for any 2D perovskite thin film ...to control the crystallization process in order to form 2D perovskite films with significantly reduced variation in n from the ... See full document
226
The Optoelectronic Properties of Surface-Modified Semiconductor Nanocrystal Solids
... A diagram of the full TRMC instrument and example photoconductance transient are shown in Figure 3.3. Microwaves are generated by a SiversIMA voltage-controlled oscillator (VCO). The frequency is tuned with the ... See full document
174
Frequency Noise Control of Heterogeneous Si/III V Lasers
... radian frequency of v 0 has a length of𝑁p. The phase 𝜃 represents phase fluctuation caused by lasing frequency noise due to one spontaneous emission ...direct phase noise (blue line) ... See full document
148
Ultrafast switch-on dynamics of frequency-tuneable semiconductor lasers
... with frequency-dependent reflec- tivity and loss ...respective frequency combs aligning in ...emission frequency, the refractive index of the tuning cavity is adjusted through controlled localised ... See full document
8
Photonic crystals as functional mirrors for semiconductor lasers
... quantum-dot lasers were low threshold, high temperature stability and single frequency operation all arising from the delta function density of ...quantum-dot lasers have not lived up to their ... See full document
172
Investigation and Application of Microscale Semiconductor Lasers and Cavities
... Such lasers allow for the internal laser field to interact with external materials or objects, and can be used in a variety of applications from near-field sensing of chemical and biological macromolecules, to ... See full document
156
Electronic and optical SESAM control in Cr⁴⁺:forsterite lasers
... different lasers. For example, in lasers emitting at one micron, the SESAMs are generally quantum well based In- GaAs structures ...length lasers such as Ti:Sapphire, the quantum well can be ... See full document
143
The Role of Intelligence and Locus of Control to Improve the Competence of Employee Individuals
... of control theory was developed by Rotter (1966) to measure the general expectations of individual employees for perceptions and beliefs of achieving success based on controlling the tendency of internal factors ... See full document
5
Down-Link CATV/FTTH and Up-Link FTTH Transport Systems Based on Reflective Semiconductor Optical Amplifier
... power penalty of 8.6 dB between the back-to-back case and the free- running one due to fiber dispersion-induced penalty. At a BER of 10 −9 , there exists a power penalty of 47 dB between the back-to-back case and the 3 ... See full document
12
Wide Spectral Photoresponse of Layered Platinum Diselenide Based Photodiodes
... Vertically illuminated Schottky photodetectors can be fabricated by forming simple metal − semiconductor contacts. They are advantageous for high-speed applications due to their majority-carrier-dominant current- ... See full document
7
Bifurcation scenarios in semiconductor lasers subject to optical injection
... Figure 10: Phase-space plot when Ω = − 0.1 and η = 0.022; the solution leaves the unstable equilibrium and is attracted to the stable one. Now we raise the level of the injection again, this time above the Hopf ... See full document
31
Novel optoelectronic devices based on single semiconductor nanowires (nanobelts)
... the semiconductor will bend upward at the gra- phene/semiconductor interface due to the difference be- tween their work functions, and the Fermi levels at ... See full document
7
Designing Nanomaterials For Electronic And Optoelectronic Devices Through Charge Carrier Control
... For the CdSe NC thin film photodetector fabrication, polished quartz windows are used as substrates. Gold electrodes (10 µm channel length, 150 µm channel width) are fabricated using standard photolithography processes. ... See full document
229
THz Quantum-Cascade Lasers for Heterodyne Techniques
... THz semiconductor lasers Semiconductor device requirements: ¥ Low enough energy level separation for THz photon emission ¥ More electrons at high energy than low energy i.e., a populatio[r] ... See full document
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