(0001) sapphire substrates
Large scale fabrication of nanopatterned sapphire substrates by annealing of patterned Al thin films by soft UV nanoimprint lithography
... nanopatterned sapphire substrates were fabricated by annealing of patterned Al thin ...underlying sapphire single crystal to consume the oxide ...on sapphire substrates after ...
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Influence of patterned sapphire substrates with different symmetry on the light output power of InGaN based LEDs
... patterned sapphire substrates (PSSs) [2-6], epi- taxial lateral overgrowth (ELOG) [7,8], surface structure [9-11], semi/non-polar quantum wells (QWs) [12-15], and so ...
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Nanoscratch Characterization of GaN Epilayers on c and a Axis Sapphire Substrates
... of sapphire used as a substrate for GaN is c-axis ...on sapphire substrates generally exhibit a large lattice mismatch ...(1120) sapphire is less (2%) than that on c-axis (0001) ...
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Enhancement of InGaN Based Light Emitting Diodes Performance Grown on Cone Shaped Pattern Sapphire Substrates
... patterned sapphire (CPSS) by using metal organic chemical vapor deposi- tion ...planar sapphire substrates (USS) indicates that the crystalline quality was improved significantly and the internal ...
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Effect of Annealing Temperature and Atmosphere to Surface Solid Phase Reaction of Sapphire Substrates and Spin Coated Copper Nitrate Gel Films
... A copper source solution was prepared by dissolving 2.42 g of copper(II) nitrate trihydrate in 25 mL of 2-methoxyethanol. The solution was stirred for 24 h to produce a light blue and homogenous solution. The solution ...
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Interfactant action of an amphiphilic polymer upon directing graphene oxide layer formation on sapphire substrates
... Quality assured surface pre‑treatment may greatly enhance adhesive interactions and, thus, the performance and durability of material joints. This holds true as well for substrates used in coating processes as for ...
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Modulus and Hardness Change of Silicon and Sapphire Substrates by TiC/VC Multilayer Coatings
... to a critical force (or stress). Then plastic deformation starts (“pop-in”), whereby the nature of this process re- mains to be identified. Coating sapphire and silicon with TiC/VC MuLs changes the resistance ...
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Micromorphology of AlN Epilayers on Sapphire Substrates
... the sapphire substrate can open a new perspective and allow new interesting research on electro-physical, mechanical, and thermal properties, for the future expansion, both in breadth and ...
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Structure and Properties of VO2 and TiO2 Based Epitaxial Heterostructures Integrated with Silicon and Sapphire Substrates.
... Thin film heterostructures constitute the backbone of solid state device technology. Next generation solid state devices will require integration of various functions on practical substrates, particularly on ...
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Effects of substrate annealing on the gold catalyzed growth of ZnO nanostructures
... c-plane sapphire substrates and their characteristic parameters are shown in Figure 1 andTable 1 ...received substrates and those annealed at 1,000°C exhi- bit a rough surface morphology with ...
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Investigation of Europium Doped Wide Band Gap Oxides and an Annealing Study of the Amorphous Oxide Semiconductor - Indium Gallium Zinc Oxide
... The electronic, optical and luminescent properties of europium doped wide band gap oxide thin films and the electronic properties of indium gallium zinc oxide (IGZO), a novel amorphous oxide semiconductor were ...
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Measurement of Impact Ionization Coefficients in GaN.
... Electron and hole impact ionization coefficients in GaN as a function of electric field were first modeled based upon Monte Carlo simulations [11] [12]. Cao et. al. [13] have calculated the impact ionization effect in ...
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High temperature MBE of graphene on sapphire and hexagonal boron nitride flakes on sapphire
... on sapphire are conducting with a resistance per square between 10 and 200 kX depending on the layer thicknesses and growth ...on sapphire substrates at lower MBE growth ...
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High temperature MBE of graphene on sapphire and hexagonal boron nitride flakes on sapphire
... on sapphire are conducting with a resistance per square between 10 and 200 kX depending on the layer thicknesses and growth ...on sapphire substrates at lower MBE growth ...
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Enhanced Light Emission due to Formation of Semi polar InGaN/GaN Multi quantum Wells
... InGaN/GaN multi-quantum wells (MQWs) are grown on (0001) sapphire substrates by metal organic chemical vapor deposition (MOCVD) with special growth parameters to form V-shaped pits simultaneously. ...
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Annealing of an AlN buffer layer in N2-CO for growth of a high-quality AlN film on sapphire
... 1650 °C was 0.49 nm. Figure 4 shows the FWHMs of the (a) (0002)- and (b) ( 1012 )-plane XRCs for the AlN bu ff er layers after annealing at various temperatures. The dotted line shows the FWHM of the XRC for the AlN bu ff ...
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Growth and Characterization of Epitaxial ZnO Thin Films on GaN(0001) Epilayers and ZnO{0001} Substrates Using Metalorganic Chemical Vapor Depositon
... Oxygen, the most obvious source of this reactant has also been studied while utilizing DEZ as the zinc source. In one report, a comparison of films grown varying the total chamber pressure from 0.05 torr to 6 torr while ...
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Growth and Fabrication of GaN/InGaN Violet Light Emitting Diode on Patterned Sapphire Substrate
... GaN/InGaN based violet light emitting diodes (LEDs), emitting at 430 nm, have been grown on conventional single side polished (SSP) and patterned sapphire substrates (PSS). Characteristics of the epitaxial ...
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Growth and Characterization of ZnO and ZnO-Based Alloys MgxZn1-xO and MnxZn1-xO
... In this work, high quality single-crystalline MgZnO films had been grown epitaxially on sapphire substrates by using pulsed laser deposition. Mg content achieved by our nonequilibrium growth method is ...
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Some Properties of Group III Nitride Thin Films Directly Grown on Non Single Crystalline Substrates by Using a Molecular Beam Epitaxy Apparatus
... Figure 9 shows the Mott-Schottky plots about the Mg-doped GaN thin films obtained from the ECV meas- urements. The directions of the slopes in these plots are clearly different between the cases of the Mg-doped GaN thin ...
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