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1073 K

Liquidus Surfaces and Isothermal Section at 1073 K in the CaO Fe2O3 (0  50 mol%)B2O3 Pseudo Ternary System

Liquidus Surfaces and Isothermal Section at 1073 K in the CaO Fe2O3 (0 50 mol%)B2O3 Pseudo Ternary System

... mixed to obtain the objective compositions. The mixture was melted in air at 1723 K for 2.7 ks in a Pt crucible placed in an electric furnace, and was directly poured on a steel plate to prepare a specimen. The ...

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The Effect of Water Vapor on High Temperature Oxidation of Fe Cr Alloys at 1073 K

The Effect of Water Vapor on High Temperature Oxidation of Fe Cr Alloys at 1073 K

... The oxidation of Fe-Cr alloys was investigated in dry and humid environments at 1073 K under the oxygen pressure of 1:1 10 14 Pa. The oxide scale formation at early stage is strongly influenced by the ...

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Isothermal Section of Ga Ru Cu Ternary Phase Diagram at 1073 K: Formation of New Ternary Phase, Ga4Ru3Cu, and Its Structural Relation with the GaRu β Phase

Isothermal Section of Ga Ru Cu Ternary Phase Diagram at 1073 K: Formation of New Ternary Phase, Ga4Ru3Cu, and Its Structural Relation with the GaRu β Phase

... High-purity Ga (grains, 99.99999 wt.%), Ru (powder, 99.9 wt.%), and Cu (powder, 99.9 wt.%) (Kojundo Chemical Laboratory Co., Ltd., Saitama, Japan) were melted by the arc-melting method on a water-cooled Cu hearth ...

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Microstructure Development of Oxide Scale during Steam Oxidation of the Fe 20Cr 30Ni 2Nb (at%) Austenitic Steel at 1073 K

Microstructure Development of Oxide Scale during Steam Oxidation of the Fe 20Cr 30Ni 2Nb (at%) Austenitic Steel at 1073 K

... during the heating. Flow rate of the gas stream was 1.7 © 10 ¹ 6 m 3 s ¹ 1 (100 mL/min). When temperature reached at around 850 K, the electromotive force was generated on the cell. Measurement was proceeded at ...

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Oxidation of Boron Carbide Silicon Carbide Composite at 1073 to 1773 K

Oxidation of Boron Carbide Silicon Carbide Composite at 1073 to 1773 K

... composite after oxidation in an oxygen atmosphere at 1073 K for 86.4 ks. The intensity of carbon peaks near the oxide/ composite interface was stronger than that of the gas/oxide interface. The carbon was ...

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Martensitic Transformation and Microstructure of Sputter Deposited Ni–Mn–Ga Films

Martensitic Transformation and Microstructure of Sputter Deposited Ni–Mn–Ga Films

... A systematic study of the thickness effect on the martensitic transformation (MT), in combination with the direct observations of film substructure, is presented in this work. Two series of the submicron Ni–Mn–Ga thin films ...

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Influence of Primary Recrystallization Texture on Selective Growth of Goss Grains

Influence of Primary Recrystallization Texture on Selective Growth of Goss Grains

... clarify the mechanism of the selective growth of Goss grain for the development of highly grain-oriented electrical steel. The authors have already reported experimental data supporting HE model through an investigation ...

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Effect of Aging Time on Shape Memory Properties
of Sputtered Ni rich Ni2MnGa Alloy Films

Effect of Aging Time on Shape Memory Properties of Sputtered Ni rich Ni2MnGa Alloy Films

... each temperature. It is clear that the constraint-aged 400 W– 1073 K-films show the TWME. The width of thermal hystere- sis, which decreases with increasing aging time, is about 2 K when the aging ...

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Preparation of a Cr coating on low-carbon steel by electrodeposition in a NaCl-KCl-NaF-Cr2O3 molten salt

Preparation of a Cr coating on low-carbon steel by electrodeposition in a NaCl-KCl-NaF-Cr2O3 molten salt

... According to the results of the electrochemical experiments, low-carbon steel sheets (wC=0.20%, wMn=0.24%, wP=0.03%, wS=0.02%, and wSi=0.11%) were used as the electrochemical deposition substrate with dimensions of 20 ...

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Aging behavior in Co Cr Mo C alloys

Aging behavior in Co Cr Mo C alloys

... at 1073 K to 1373 K for ...at 1073 K caused the progressive formation of very fine precipitates along intra-granular striation and the ...1373 K, -phase was mainly formed on ...

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Molten Salt Pulse Electrodeposition of Silicon on Low Silicon Steel

Molten Salt Pulse Electrodeposition of Silicon on Low Silicon Steel

... By single factor experiment method, the effect of electro- deposition parameters including average current density, duty cycle, frequency, deposition temperature and deposition time on the composition and microstructure ...

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Effects of Porosity and Temperature on Oxidation Behavior in Air of Selected Nuclear Graphites

Effects of Porosity and Temperature on Oxidation Behavior in Air of Selected Nuclear Graphites

... this work, three brands of nuclear graphite for HTGR (i.e., HSM-SC, IG-11, and NBG-18) are oxidized under 873 and 1073 K in open air, and their weight loss curves are obtained. The acceleration of oxidizing ...

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Annealing of Amorphous Sm5Fe17 Melt Spun Ribbon

Annealing of Amorphous Sm5Fe17 Melt Spun Ribbon

... The melt-spun ribbon wrapped with tantalum foil was annealed under an argon atmosphere for 0.1–1 h at temper- atures between 773 K and 1073 K. The composition of the melt-spun ribbon was examined by ...

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Mechanical Properties and Shape Memory Behavior of Ti Mo Ga Alloys

Mechanical Properties and Shape Memory Behavior of Ti Mo Ga Alloys

... reverse martensitic transformation finish temperature (Af) should be below body temperature. The Af temperature decreased with increasing Mo and Ga content. Ti-7Mo-4Ga was selected using the result of bending test as ...

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Magnetic Field Induced Two Way Shape Memory Effect of Ferromagnetic Ni2MnGa Sputtered Films

Magnetic Field Induced Two Way Shape Memory Effect of Ferromagnetic Ni2MnGa Sputtered Films

... sputtering apparatus using four kinds of Ni–Mn–Ga targets. After separating from the substrate, the films were heat-treated at 1073 K for 3.6 ks for homogenization and aged at 673 K for 3.6 ks in a ...

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Evaporation Behaviors of Cu(In,Ga)Se2 Semiconductor Compound via Pyrometallurgical Chlorination Process Utilizing Ammonium Chloride

Evaporation Behaviors of Cu(In,Ga)Se2 Semiconductor Compound via Pyrometallurgical Chlorination Process Utilizing Ammonium Chloride

... and 1073 K, respectively. For the reaction at 673 K, indium and gallium chlorides were deposited in the temperature zone around 400 K, while selenium chloride was concentrated in the lower ...

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Disbonding in Joint of Carbon to Nickel

Disbonding in Joint of Carbon to Nickel

... 2123 K with a much higher strength used for comparison, bonding was also performed under 17 MPa at 1073 K for ...1273 K for ...at 1073 K was reheated at the same temperature, it ...

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Thermoelectric Properties of NaxCo2O4 Prepared by the Polymerized Complex Method and Hot Pressing

Thermoelectric Properties of NaxCo2O4 Prepared by the Polymerized Complex Method and Hot Pressing

... 973, 1073 and 1173 K for ...at 1073 K was as high as that for the sample prepared by the SSR ...1173 K, the degrees of the c-axis orientation were lower than that of the sample at ...

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Light Absorption by Metals with Porous Surface Layer Formed by Oxidization Reduction Treatment

Light Absorption by Metals with Porous Surface Layer Formed by Oxidization Reduction Treatment

... Light absorption measurements were carried out for the copper substrates oxidized at 1073 K and then reduced at different temperatures, the results of which are shown in Fig. 4. For comparison, light ...

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Syngas Production and Losses Encountered in Gasification of Rice Husks

Syngas Production and Losses Encountered in Gasification of Rice Husks

... Table 1 shows the comparison between the results of gaseous compositions available from literature and pre- dicted values using this model relations. The [15] model presented results using an equilibrium model in a ...

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