a-Si:H photodetector
Effect Of Annealing Temperature On The Photodetector Characteristic Of Sns /si Hetreojunction
... n-type Si wafer with crystal orientation (111) as a substrate for determining the electrical ,optoelectronic detector parameter of SnS/Si hetrojunction ...etched Si wafers by immersing and stirring ...
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Broadband Ge/SiGe quantum dot photodetector on pseudosubstrate
... of wide detection window with the cutoff wavelength of about 12 µm instead of 5 to 6 µm for Ge/Si QDIPs of similar device structure [11]. Since the sample in FTIR experiments is simultaneously exposed to a wide ...
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A Review on Silicon-Based Photodetectors
... Photodetectors are transducers that amend one of their characteristics when light energy falls on them.Photodetectors which generates more amount of current even if little amount of light falls on it and have fast ...
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Conjugated Polymer (MEH-PPV:MWCNTs) Organic Nanocomposite for Photodetector Application Isam M. Ibrahim1 Abeer H. Khalid2*
... with a wavelength range from 190-1100nm. PL measurement was done using an Agilent Tech. Fluorescence spectrophotometer. The SPECTROFLUOROMETER DETECTOR (RF- 551) ver. 2.3A programmable and scanning’ was used, to measure ...
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Wavelength Controlled Photodetector Based on Single CdSSe Nanobelt
... CdSSe nanobelts (NBs) are synthesized by thermal evaporation and then characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), transmission electron microscopy (TEM), high-resolution electron ...
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A Quaternary ZnCdSeTe Nanotip Photodetector
... Figure 7 shows XRD spectrum measured from the as- grown sample. Table 1 lists the point group II–VI semi- conductors, with various crystal structures and lattice constants, using Joint Committee on Powder Diffraction ...
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Multicolor Photodetector of a Single Er3+ Doped CdS Nanoribbon
... Er 3+ -doped CdS nanoribbons (Er-CdS NRs) are synthesized by thermal evaporation and then characterized by field emission scanning electron microscopy (FE-SEM), high-resolution transmission electron microscopy (HRTEM), ...
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An InGaAlAs-InGaAs two-color photodetector for ratio thermometry
... When exposed to the blackbody source, the mean output voltage of the transimpedance amplifier and the SNR, (taken as the ratio of the mean output voltage to the standard deviation of the output voltage) are shown in Fig. ...
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Double-barrier Superlattice Infrared Photodetector Integrated with Multiple Quantum-Well Infrared Photodetector to Improve Performance
... infrared photodetector which has a 15-period superlattice (SL) sandwiched by double barriers with multiple quantum wells (MQWs) inserted in the right side of them has ...
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Study of low dimensional SiGe island on Si for potential visible Metal-Semiconductor-Metal photodetector
... metal photodetector and to analyse the potential of the structures for optoelectronic ...MSM photodetector increases with the bias voltage and saturated gradually as the voltage reach ...
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Mercury Cadmium Telluride (HgCdTe) pin Photodetector on Si/SOI Substrate
... HgCdTe photodetector device on Si/SOI substrate using ATLAS simulation software by Silvaco ...HgCdTe photodetector on Si/SOI substrate instead of the conventional CdZnTe substrate will lead to ...
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Structural and Optical Properties for Nanostructure (Ag2O/Si & Psi) Films for Photodetector Applications
... very close to the surface and it can reveal short wavelengths (˂600 nm). The second peak is located at (750 and 800 nm) due to absorption edge of (n- PS/Si), (p-PS/Si) hetero junctions respectively to ...
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A Prototype Hadamard Imaging System
... The purpose of this thesis was to investigate the possibility of creating an inexpensive imaging system that would be suitable for imaging small animals, either the skin of mice for skin cancer studies, or potentially ...
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High White Light Photosensitivity of SnSe Nanoplate Graphene Nanocomposites
... strate. The electrode was fabricated by photolithography, and the separation between the adjacent fingers was 5 μm. The white light response of the device was mea- sured by Keithley 4200 apparatus under the periodical ...
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First Principles Study of the Band Gap Structure of Oxygen Passivated Silicon Nanonets
... of Si–O bond is much smaller than the Si–Si bond, the distance between the silicon atoms which are linked by the same oxygen atom becomes much smaller in the Si–O– Si passivated ...the ...
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Electrochemical Deposition of Flower-Like Nickel Nanostructures on Well-Defined n-Si (111):H
... Abstract In this paper the electrodeposition of nickel on n-Si(111):H substrate, in the presence of sulphuric acid, was studied. Cyclic voltammetry has been used to characterize the electrochemical behavior ...
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STEM Moiré Observation of Lattice Relaxed Germanium Grown on Silicon
... on Si substrate has many advantages com- pared with bulk Ge wafer when we think about future industrial ...onto Si because of their 4% lattice mismatch [5] ...the Si substrates because the ...
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Mechanism of Vanadium Leaching during Surface Weathering of Basic Oxygen Furnace Steel Slag Blocks: A Microfocus X-ray Absorption Spectroscopy and Electron Microscopy Study
... SEM Microanalysis. SEM analysis showed that the center of slag blocks consists of an interlocking crystalline matrix (Figure 1). EDS mapping showed that each subregion within the matrix had relatively uniform composition ...
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Cavity enhanced resonant tunneling photodetector at telecommunication wavelengths
... For weak light powers the photocurrent is a linear function of P, which means that the photocurrent is determined by the number N of photogenerated holes accumulated at the double barrie[r] ...
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A Novel Photoelectrochemical Sensor Based on Gr-SiNWs-Si/Pt Electrode for Sensing of Hydroquinone
... In previous work, we reported a copper hexacyanoferrate film modified silicon electrode which has been used in HQ determination by photocurrent measurements [21]. However, the reported sensor suffers from poor linear ...
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