• No results found

a-Si:H resistivity

Study of Rice Husk Ash as Potential Source of Acid Resistance Calcium Silicate

Study of Rice Husk Ash as Potential Source of Acid Resistance Calcium Silicate

... of Si/Ca were adjusted each time to obtain silica rich calcium silicate ...of Si/Ca, the heat treatment improves the acid resistivity of calcium silicate whereas at lower molar ratios the heat ...

7

Improved Resistivity and Surface Morphology of Laser Treated Cr/Pd Metal Contact Sputter Deposited on Si

Improved Resistivity and Surface Morphology of Laser Treated Cr/Pd Metal Contact Sputter Deposited on Si

... Firstly, Si substrates were cut into small pieces of 1cm × 1 cm size. The substrates then were cleaned by heating the samples in acetone solution at 55C. Cr (5 nm) was deposited on Si followed by Pd (100 ...

5

Hydrogeophysical Parameters Estimation for Aquifer Characterisation in Hard Rock Environment: A Case Study from Yaounde, Cameroon

Hydrogeophysical Parameters Estimation for Aquifer Characterisation in Hard Rock Environment: A Case Study from Yaounde, Cameroon

... bulk resistivity at pumping sites has been obtained from krigged estimates of aquifer re- sistivity data from VES stations (Figure ...1 h followed by a recovery phase, which was maintained until the water ...

10

High Pressure- Temperature Electrical Resistivity Experiments on Fe-Si Alloys Bearing on Conductive Heat Flow at the Top of the Outer Core

High Pressure- Temperature Electrical Resistivity Experiments on Fe-Si Alloys Bearing on Conductive Heat Flow at the Top of the Outer Core

... electrical resistivity saturation phenomena that was not considered in previous ...of resistivity by application of temperature makes resistivity values at high T to depart from the regular linear ...

173

Discussion on the Method of Evaluating Oil and Water Layers by Using Ratio of Deep Resistivity and Flush Zone Resistivity

Discussion on the Method of Evaluating Oil and Water Layers by Using Ratio of Deep Resistivity and Flush Zone Resistivity

... zone resistivity to quantitatively evaluate the oil content of the ...using resistivity ratio is presented. The principle is that the resistivity ratio of the pure water layer with 100% water ...

6

Effect of Sintering Time on the Structural, Magnetic and Electrical Transport Properties of Mg0 35Cu0 20Zn0 45Fe1 94O4 Ferrites

Effect of Sintering Time on the Structural, Magnetic and Electrical Transport Properties of Mg0 35Cu0 20Zn0 45Fe1 94O4 Ferrites

... Electrical and dielectric properties were carried out by using Keithley Electrometer and Hewlett Packart im- pedance analyzer (HP 4291A). For electrical and dielec- tric measurements, the pellet shaped samples were well ...

11

Thermoelectric Properties of Si2Ti Type Al Mn Si Alloys

Thermoelectric Properties of Si2Ti Type Al Mn Si Alloys

... electrical resistivity definitely indicates the presence of a narrow energy gap or a narrow pseudogap in the vicinity of the Fermi ...electrical resistivity so as to increase with increasing temper- ...

9

Macroporous Silicon Formation on Low-resistivity p-type c-Si Substrate by Metal-catalyzed Electrochemical Etching

Macroporous Silicon Formation on Low-resistivity p-type c-Si Substrate by Metal-catalyzed Electrochemical Etching

... Macroporous silicon with large aperture size was fabricated on p-type c-Si substrate with the resistivity of about 0.1-3 ohm·cm by metal–catalyzed electrochemical etching (MCECE). Firstly, Ag nanoparticle ...

7

Crossover from first-to-second-order ferromagnetic transition in 	narrowband manganite Sm1-xSrxMnO3 (x = 0.48)

Crossover from first-to-second-order ferromagnetic transition in narrowband manganite Sm1-xSrxMnO3 (x = 0.48)

... increasing H, resistivity substantially decreases, MIT shifts toward the higher temperature, and the width of the hysteresis narrows down ...different H as shown in Figure 1 ...different H ...

8

Crossover from first-to-second-order ferromagnetic transition in narrowband manganite Sm

Crossover from first-to-second-order ferromagnetic transition in narrowband manganite Sm

... increasing H, resistivity substantially decreases, MIT shifts toward the higher temperature, and the width of the hysteresis narrows down ...different H as shown in Figure 1 ...different H ...

8

Change in Surface Conductivity of Elastically Deformed p Si Crystals Irradiated by X Rays

Change in Surface Conductivity of Elastically Deformed p Si Crystals Irradiated by X Rays

... A fourfold increase in compression rate (from 8 to 32 μm/min) leads to the changes in the nature of the de- pendence of the resistivity on the load (Fig. 3b). There is a small (<0.2%) decrease in the resistance ...

7

Dielectric properties of porous silicon for use as a substrate for the on chip integration of millimeter wave devices in the frequency range 140 to 210 GHz

Dielectric properties of porous silicon for use as a substrate for the on chip integration of millimeter wave devices in the frequency range 140 to 210 GHz

... the Si nanostructures (in our case, we considered a native oxide thickness of ...a Si skeleton thickness of 10 nm), better agreement is achieved between our experimental results and the calculated ...

8

Maximum entropy mobility spectrum of two dimensional hole gas in strained Si1 x/Si heterostructures

Maximum entropy mobility spectrum of two dimensional hole gas in strained Si1 x/Si heterostructures

... Analysis of the magnetic-field-dependent resistivity tensors reveals a two-dimensional hole gas 2DHG in the Si/SiGe/Si quantum well, carriers in the boron-doped cap layer, and an unknown[r] ...

213

Formation Behavior of Nanoclusters in Al Mg Si Alloys with Different Mg and Si Concentration

Formation Behavior of Nanoclusters in Al Mg Si Alloys with Different Mg and Si Concentration

... Figure 13 shows relationships between micro-Vickers hardness and electrical resistivity changes due to the Cluster (1) formation for naturally aged various alloys with different Si concentration. The ...

7

On the formation of blisters in annealed hydrogenated a Si layers

On the formation of blisters in annealed hydrogenated a Si layers

... of Si-hydrogen bonds of any type, i.e. the total amount of bonded H, decreases by increasing the annealing time, which suggests that the annealing caused the break of some of the bonds of H to ...

7

Germanosilicide Contacts to Ultra-shallow P+N Junctions of Nanoscale CMOS Integrated Circuits by Selective Deposition of In-situ Doped Silicon-Germanium Alloys

Germanosilicide Contacts to Ultra-shallow P+N Junctions of Nanoscale CMOS Integrated Circuits by Selective Deposition of In-situ Doped Silicon-Germanium Alloys

... than that of NiSi probably due to the incorporation of both Ge and Pt, which suggests that the phase formed is Ni(Pt) germanosilicide. At higher temperatures, similar to the observation in pure Ni and Pt cases, the ...

173

Electrochemical Deposition of Flower-Like Nickel Nanostructures on Well-Defined n-Si (111):H

Electrochemical Deposition of Flower-Like Nickel Nanostructures on Well-Defined n-Si (111):H

... preferentialy and distribution of the deposits on n- Si(111) is perfectly uniform. When high growth rates are observed, it can be seen that, growth does not take place in preferential directions hence spherical ...

6

Surface reactions during plasma enhanced chemical vapor deposition of silicon and silicon based dielectrics

Surface reactions during plasma enhanced chemical vapor deposition of silicon and silicon based dielectrics

... surface Si-H bond and increasing the potential energy of the ...a Si (1) -H bond distance of 1.69Å and a Si(2)-H distance of ...between H abstraction by H and ...

180

Measurement and Control of In-plane Surface Chemistry at the Si/SiO2 Interface.

Measurement and Control of In-plane Surface Chemistry at the Si/SiO2 Interface.

... One of the most important inventions of the 20th century is the transistor, invented at Bell Laboratories in 1947 by William Shockley, John Bardeen and Walter Brattain. It is the basis of modern electronics. These first ...

101

A Novel Photoelectrochemical Sensor Based on Gr-SiNWs-Si/Pt Electrode for Sensing of Hydroquinone

A Novel Photoelectrochemical Sensor Based on Gr-SiNWs-Si/Pt Electrode for Sensing of Hydroquinone

... the Si/Pt (curve c, ...and Si/Pt ...the Si and the Pt side, respectively, and thus measureable current signals can be ...and Si/Pt exhibited rectifying properties with weak voltage dependence ...

15

Show all 10000 documents...

Related subjects