AlGaAs-GaAs quantum-well structures
Intersubband terahertz transitions in Landau level system of cascade GaAs/AlGaAs quantum well structures in strong tilted magnetic field
... Recently, the possibility to achieve a population inver- sion in the system of Landau levels (LL) in cascade quantum well structures in strong magnetic field under a condition of sequential resonant ...
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Micro photoluminescence of GaAs/AlGaAs triple concentric quantum rings
... DE-ring structures are reported in litera- ture ...via quantum confined Stark effect induced by charge defects in the TCQR environment [25] is very ...
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Room temperature spin diffusion in (110) GaAs/AlGaAs quantum wells
... (110)-grown GaAs/AlGaAs QW, the DP spin relaxation mechanism is not efficient for electron spins parallel to the growth direction because the spin orientation of electrons is parallel to the direction of ...
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Electron Microscopy Studies of Non Local Effects' Impact on Cathodoluminescence of Semiconductor Laser Structures
... Spatially and spectrally resolved cathodoluminescence (CL) studies performed in a scanning electron microscope (SEM) or a scanning transmission electron microscope (STEM) are widely applied to determine the luminescence ...
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Influence of doping density on electron dynamics in GaAs/AlGaAs quantum cascade lasers
... The subband energies and wave functions were calcu- lated by solving the envelope function Schrödinger equation in an effective mass approximation with conduction band dispersion nonparabolicity taken into account via ...
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Development of AlGaAs /GaAs/ AlGaAs Step Quantum well to produce Tunable Photo Detector and Electro Absorption Modulator for noise reduction
... in quantum well devices is one of the most important factor in the design of the quantum structures and is proportional to the amount of incident light that is absorbed in the ...as ...
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Laterally pumped GaAs/AlGaAs quantum wells as sources of broadband terahertz radiation
... Typical quantum well structures have a limited number of bound states 共subbands兲, of the order of 10 or so, and including all of them present no difficulties on the computational ...real ...
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Gain optimization in optically pumped AlGaAs unipolar quantum-well lasers
... in quantum wells (QWs) by Kazarinov and Suris in 1971 [1], there has been considerable research effort in this ...the quantum cascade laser (QCL), demonstrated by Faist et ...the GaAs–AlGaAs ...
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Characterisation of temperature dependent parameters of multi quantum well (MQW) Ti/Au/n AlGaAs/n GaAs/n AlGaAs Schottky diodes
... sophisticated structures such as superlattices (SL’s), quantum wells (QW’s), quantum dots (DQ’s), quantum wires (QW’s), ...the GaAs/Al x Ga 1-x ...
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Droplet etching of deep nanoholes for filling with self aligned complex quantum structures
... in AlGaAs surfaces and subsequent hole filling with ...like quantum dot molecules ...high quantum dot uniformity and narrow luminescence linewidth, which are often found in applications, set limits ...
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Optical Gain and Confinement in Gaas/Algaas Structure Quantum Well Lasers
... multiple quantum wells as active region will provokes the optical gain expansion as the maximum gain get on higher standard according to the quantum well structures wells ...
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Measurement of the spin temperature of optically cooled nuclei and GaAs hyperfine constants in GaAs/AlGaAs quantum dots
... studied structures, the most efficient nuclear spin pumping mechanism is via resonant optical injection of spin polarized excitons into the high-energy type B dots with a subsequent tunneling and relaxation into ...
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Novel structures for lattice mismatched infrared photodetectors
... combine GaAs and AlGaAs multiplication regions with a ...the quantum efficiencies currently exhibited are very low (0.01% for the GaAs design and ...the AlGaAs design). These low ...
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Tuning of Rashba/Dresselhaus Spin Splittings by Inserting Ultra Thin InAs Layers at Interfaces in Insulating GaAs/AlGaAs Quantum Wells
... excitation, has been effectively tuned by changing the well width of QWs and by inserting a one-monolayer-thick InAs layer at interfaces of GaAs/AlGaAs QWs. Reflectance difference spectroscopy (RDS) ...
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MBE grown GaAsBi/GaAs multiple quantum well structures : structural and optical characterization
... rst quantum well (QW). The nominal well thickness in every sample was 8 ...each well/barrier interface for 1 min to allow excess Bi ...
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Dynamic nuclear polarization in InGaAs/GaAs and GaAs/AlGaAs quantum dots under nonresonant ultralow-power optical excitation
... semiconductor quantum dots: In- GaAs/GaAs and ...InP/GaInP quantum dots ...interface GaAs/AlGaAs dots are generally found to be smaller (up to ∼40 ...in GaAs/AlGaAs ...
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GaAs-Based Superluminescent Light-Emitting Diodes with 290-nm Emission Bandwidth by Using Hybrid Quantum Well/Quantum Dot Structures
... Figure 2 shows the PC spectra as a function of applied reverse bias and an EL spectrum at a current density of 1.4 kA cm −2 for the hybrid QW/QD laser sample, mea- sured normal to the surface of an optical access mesa ...
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Ultra High Purity Gallium and Indium for Emerging Iii-V Epitaxial Nanoelectronics Materials Technologies: An Overview
... For GaAs ICs, the main heterostructure devices under investigation are HEMTs, HBTs and ...on GaAs/AlGaAs or InP/GaInAs structures devices ...the AlGaAs and the GaAs ...
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Growth and Characterisation of GaAs/AlGaAs Core-shell Nanowires for Optoelectronic Device Applications
... The sidewalls of GaAs nanowires were found to transform to {110} facets at high temperature as a result of surface atom migration. The rate of the facet transformation was found to be controlled by temperature and ...
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Optimization of GaAs Nanowire Pin Junction Array Solar Cells by Using AlGaAs/GaAs Heterojunctions
... of GaAs nanowire pin junction array solar cells by introducing AlGaAs/GaAs ...heterejunctions. AlGaAs is used for the p type top segment for axial junctions and the p type outer shell for ...
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