AlGaAs-GaAs quantum wells
Room temperature spin diffusion in (110) GaAs/AlGaAs quantum wells
... (110)-grown GaAs/AlGaAs QW, the DP spin relaxation mechanism is not efficient for electron spins parallel to the growth direction because the spin orientation of electrons is parallel to the direction of ...
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Spin photocurrent spectra induced by Rashba and Dresselhaus type circular photogalvanic effect at inter band excitation in InGaAs/GaAs/AlGaAs step quantum wells
... P circ = (I σ + −I σ − )/(I σ + +I σ − ), and n is the refractive index of the QWs material. It can be seen from Figure 3 that the experimental data agree well with the phenomeno- logical theory of CPGE. In the fittings, ...
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Optical Gain and Confinement in Gaas/Algaas Structure Quantum Well Lasers
... multiple quantum wells as active region will provokes the optical gain expansion as the maximum gain get on higher standard according to the quantum well structures wells ...
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Observation of microwave induced resistance oscillations in a high mobility two dimensional hole gas in a strained Ge/SiGe quantum well
... in GaAs/AlGaAs ...to GaAs/AlGaAs and demonstrate that microwave photoresistance can be used to probe the energy spectrum and correlations of 2D holes in Ge/SiGe quantum ...
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Ultrashort electromagnetic pulse control of intersubband quantum well transitions
... ductor quantum well with electromagnetic pulses with a duration of few cycles and even a single ...double GaAs/AlGaAs quantum well structure, taking into account the ultrashort nature of the ...
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Temperature and electron density dependence of spin relaxation in GaAs/AlGaAs quantum well
... Spin dynamics and the related physics in semiconduc- tors have drawn much attention in the past years because of its importance to realize novel spin-electro- nic devices [1]. In recent years, electron spin relaxation in ...
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Nonparabolic band effects in GaAs/AlxGa1 xAs quantum dots and ultrathin quantum wells
... In conclusion, we have studied the effects of conduction band nonparabolicity on the exciton properties in GaAs/ AlGaAs QDs and very thin QWs and in QDs using high field magneto-PL. It is found that the ...
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Development of AlGaAs /GaAs/ AlGaAs Step Quantum well to produce Tunable Photo Detector and Electro Absorption Modulator for noise reduction
... as GaAs, AlGaAs have been grown by epitaxial ...of Quantum well where electronic properties can be altered. Quantum well systems are used for high performance devices such as transistors, ...
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Circularly polarized lasing in chiral modulated semiconductor microcavity with GaAs quantum wells
... planar GaAs waveguide or a semiconductor microcavity (MC) with embedded light-emitting achiral InAs quantum dots (QD) allows to achieve light emis- sion with a high degree of circular polarization (DCP), ...
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Characterisation of temperature dependent parameters of multi quantum well (MQW) Ti/Au/n AlGaAs/n GaAs/n AlGaAs Schottky diodes
... Schottky diodes are the basic building component in many semiconductor devices (field effect transistors, solar cells, photodetectors, Gunn diodes, microwave diodes, etc...) and integrated circuits, hence the intense ...
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Room temperature strong coupling in a semiconductor microcavity with embedded AlGaAs quantum wells designed for polariton lasing
... an AlGaAs QW-based, vertically emitting ...the AlGaAs QWs in the conduction band which results in an estimated exciton binding energy exceeding 25 meV, necessary for room temperature stable ...a ...
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Observation of hybrid Tamm plasmon exciton polaritons with GaAs quantum wells and a MoSe2 monolayer
... Device fabrication. Figure 1a depicts a graphical illustration of our microcavity device: it consists of an AlAs/AlGaAs distributed Bragg reflector (DBR) (30 pairs), which is characterized spectrally by its stop ...
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Tuning of Rashba/Dresselhaus Spin Splittings by Inserting Ultra Thin InAs Layers at Interfaces in Insulating GaAs/AlGaAs Quantum Wells
... In this paper, we tune the RD ratio by changing the well widths and by inserting an ultra-thin InAs layer with a thickness of one monolayer (ML) at interfaces of GaAs/AlGaAs multiple ...
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Laterally pumped GaAs/AlGaAs quantum wells as sources of broadband terahertz radiation
... to quantum cascade lasers, may operate at room temperature, or even at 400 ...graded quantum well, it appears possible to realize limited-bandwidth inco- herent terahertz sources, the spectral properties of ...
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Theoretical analysis of GaAs/AlGaAs quantum dots in quantum wire array for intermediate band solar cell
... that nonparabolic (warping) subband dispersion curves exist in the valence band, which reflects the band mixing behavior in quantum wells due to the strong coupling between heavy-hole (HH), light-hole (LH) ...
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Acceptor binding energy in delta-doped GaAs/AlAs multiple-quantum wells
... Recently, studies of the internal transition of shallow im- purities fresh impetus due to the potential applications in far-infrared detectors and a solid state terahertz laser. 1–5 Con- finement of such impurities in ...
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Controlled suppression of the photoluminescence superlinear dependence on excitation density in quantum dots
... semiconductor quantum dots (QDs) are zero-dimensional structures, being solid state systems with an atomic-like density of ...for quantum infor- mation ...for quantum cryptography [1], lasers [2,3], ...
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Growth and Characterisation of GaAs/AlGaAs Core-shell Nanowires for Optoelectronic Device Applications
... shell thickness is required to prevent the carriers generated in GaAs core from tunnelling through the AlGaAs shell and recombining at the free surface of GaAs cap layer. Beyond this thickness, the ...
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Optimization of GaAs Nanowire Pin Junction Array Solar Cells by Using AlGaAs/GaAs Heterojunctions
... of GaAs nanowire pin junction array solar cells by introducing AlGaAs/GaAs ...heterejunctions. AlGaAs is used for the p type top segment for axial junctions and the p type outer shell for ...
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Exciton localization and structural disorder of GaAs1−xBix/GaAs quantum wells grown by molecular beam epitaxy on (311)B GaAs substrates
... structural disorder and exciton localization. The Raman scattering results demonstrate that the relative intensity of TO and LO GaAs phonon modes changes with increasing Bi composition which indicates possible ...
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