AlGaN/GaN
High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum well electron blocking layers
... in GaN-based HEMTs will inevitably induce the spillover of transport electrons at high-drain- voltage conditions, and that becomes a growing ...tional AlGaN/GaN HEMT, due mainly to the insufficient ...
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Impact of Buffer Mole Fraction on Algan/ Gan HEMT with Different Gate Voltage
... composite AlGaN/GaN buffer were investigate. The sandwich of AlGaN and GaN mainly depends on Al mole fraction as it defines the band gap and lattice constant of ...of AlGaN buffers ...
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AlGaN/GaN MISHEMTs with AlN gate dielectric grown by thermal ALD technique
... make AlGaN/GaN HEMTs suitable for RF and power applications ...conventional AlGaN/GaN HEMTs using Schottky gates suffer from low turn-on voltage due to low Schottky barrier between gate metal ...
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Near surface processing on AlGaN/GaN heterostructures: a nanoscale electrical and structural characterization
... of AlGaN/GaN het- erostructures, combining conventional electrical analyses of HEMTs with advanced nanoscale characterization techniques as transmission electron microscopy (TEM), atomic force microscopy ...
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A Physics-Based AlGaN/GaN HFET Compact Model for Implementation in Circuit Simulators.
... down is reversible over the RF cycle and the device is not damaged. RF breakdown is, in fact, a fundamental phenomenon that limits the RF performance of these devices under high power operation. Breakdown in ...
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Performance and Reliability Modeling of AlGaN/GaN Hetero-junction Field Effect Transistors.
... in AlGaN/GaN HFETs are included in which TCAD is used to model the nonlinear source resistance effect in the HFET channel using the 2-D numerical device simulator Silvaco TM ...of GaN is simulated ...
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Numerical Optimization for Source-Drain Channel Resistance of AlGaN/GaN HEMTS
... Knowing the behavior of the 2DEG density as a function of the gate voltage, one can obtain the 2D electron mobility as a function of the gate voltage along the channel [21]. On the other hand, from the charge transport ...
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Thermal Analysis of AlGaN/GaN HEMT: Measurement and Analytical Modeling Techniques
... AlGaN/GaN HEMTs are the focus of attention in wireless communication and power electronics applications for high frequency, high temperature and high power performance. After much advancement and ...
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Large Signal Equivalent Circuit Model for Package AlGaN /GaN HEMT
... 2. SMALL-SIGNAL EQUIVALENT CIRCUIT MODEL In order to include the package effect of large gate periphery device, the parasitic parameters should be taken good consideration for high frequency application. Jarndal and ...
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AlGaN/GaN MOSHFETs using ALD Dielectrics: A Study in Performance and Reliability.
... encompasses AlGaN/GaN device ...to AlGaN as a barrier layer, and is capable of delivering higher output current density and lower on-resistance owing to its strong spontaneous polarization [97], ...
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Synthesis of titanium nitride for self aligned gate AlGaN/GaN heterostructure field effect transistors
... As an evaluation method for the gate-first process, we fabricated AlGaN/GaN HFETs with ohmic metals which were deposited first followed by the deposition of gate elec- trodes. The deposited ohmic and gate ...
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A scattering rate approach to the understanding of absorption line broadening in near-infrared AlGaN/GaN quantum wells
... Grier, A, Cooper, JD, Lever, L, Valavanis, A, Ikonic, Z, Indjin, D, Harrison, P, Edmunds, C, Shao, J, Tang, L, Gardner, G, Zakharov, D, Manfra, MJ and Malis, O A scattering rate approach to the understanding of ...
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Sulfuric acid and hydrogen peroxide surface passivation effects on AlGaN/GaN high electron mobility transistors
... the overall gate leakage current. The chemical treatment can form a very effective and easy method to reduce high gate leakage currents in GaN/AlGaN/GaN HEMTs. After the treatment, the device ...
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Electrical Characterization of Traps in AlGaN/GaN FAT HEMT’s on Silicon Substrate by C V and DLTS Measurements
... In summary, we have investigated static measurements and defect analysis on FAT-HEMT AlGaN/GaN realized on Si substrate grown by MBE. Defects analysis per- formed on these transistors by C-V characteristics ...
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NOISE PARAMETER EXTRACTION FOR SYMMETRIC DUAL MATERIAL GATE ALGAN/GAN MODFET FOR LNA DESIGN
... DMG AlGaN/GaN MODFET incorporating field plate to obtain better field distribution and performance of device is shown in ...and GaN channel ...
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Coherent vertical electron transport and interface roughness effects in AlGaN/GaN intersubband devices
... in AlGaN/GaN heterostructures is critical to optimizing their performance and ultimately real- izing high-quality optoelectronic ...of AlGaN/GaN heterostructures is the large built-in ...
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A High Accuracy AlGaN/GaN Reverse Blocking CRD (RB CRD) with Hybrid Trench Cathode
... in AlGaN/GaN metal – oxide – semiconductor high-electron-mobility ...normally-off GaN double-channel metal-oxide- semiconductor high-electron-mobility ...
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Study of electronic transport parameters on the heterojunction of AlGaN/GaN, grown on Sapphire: two layer model
... In the present work the authors have used the heterojunction of AlGaN/GaN in which from doped and has higher band gap AlGaN electron get transferred to the undoped and lower band gap GaN. ...
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Coherent vertical electron transport and interface roughness effects in AlGaN/GaN intersubband devices
... could potentially allow emission at higher THz frequen- cies, while the higher conduction band discontinuity (1.75 eV compared to 1 eV in AlGaAs/GaAs) could re- duce leakage currents, and therefore enable higher tem- ...
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Gate leakage current induced trapping in AlGaN/GaN Schottky gate HFETs and MISHFETs
... 10. Verzellesi G, Morassi L, Meneghesso G, Meneghini M, Zanoni E, Pozzovivo G, Lavanga S, Detzel T, Häberlen O, Curatola G: Influence of buffer carbon doping on pulse and AC Behavior of insulated-gate field-plated power ...
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