Band-structure in quantum wells
Nonparabolic band effects in GaAs/AlxGa1 xAs quantum dots and ultrathin quantum wells
... the quantum physics in these structures is necessary to control the perfor- mance of nanoscale devices and to design and fabricate new heterostructures with specific ...the band structure by ...
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Quantum interference effects in p Si1−xGex quantum wells
... components of the resistance tensor were measured on Hall bars in magnetic fields up to 11 T. The lowest measurement temperatures were 33 mK for Sample I and 335 mK for the others. The hole mobility was ∼ 1 × 10 4 cm −2 ...
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Verification of band offsets and electron effective masses in GaAsN/GaAs quantum wells : Spectroscopic experiment versus 10 band k p modeling
... the band structure of III–V semiconductor such as GaAsN we employed the kp ...conduction band states means that the conventional 8-band kp model is not able to describe the band ...
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Magnetophotoluminescence of negatively charged excitons in narrow quantum wells
... narrow quantum-well regime. A descrip- tion of the samples’ band structure can be found ...As band-gap illumination was used to deplete the electron density in the GaAs QW 共 optical depletion ...
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Spin relaxation and carrier recombination in GaInNAs multiple quantum wells
... conduction band edge mass, 6 which has been shown to increase almost linearly with increasing nitrogen concentration up to a value of ...the band structure calculations of the so-called cluster-state ...
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The Einstein relation in quantum wells and quantum well wires: simplified theory and a suggestion for experimental determination
... energy band models on the DMR in quantum confined materials can be assessed from this work and this simplified analysis also covers various dimensionally reduced compounds in the quantum regime ...
Rashba spin splitting and terahertz quantum Hall effect for heavy holes in strained germanium quantum wells
... electronic band structure and crystal structure, Section ...the band structure of bulk ...valence band in semiconductors, its influence on the calculation of the band ...
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Bismuth Quantum Dots in Annealed GaAsBi/AlAs Quantum Wells
... /GaAs quantum wells [26] and correlates with XRD data which indicated the Bi content of ...PL band has an inner structure, which reveals itself at low ...
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Electron Subband Structure and Mobility Trends in P-n Delta-Doped Quantum Wells in Si
... The latter equation summarizes the model for the conduction band bending profile. Instead of carrying out numerically troublesome self- consistent calculations, we simply solve Schr¨ odinger-like effective mass ...
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Electron-Hole Recollisions in Driven Quantum Wells
... GaAs quantum wells To study excitons in GaAs, it is useful to build quantum wells (QWs) into the structure of the ...the band and the exciton structure in nontrivial ...
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Type II quantum wells with tensile strained GaAsSb layers for interband cascade lasers with tailored valence band mixing
... The entire structure is terminated by the same GaSb or GaAs 0.08 Sb 0.92 layer, respectively. In order to measure photoluminescence (PL) and photo- reflectance (PR) in a wide spectral range, we used a setup based ...
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Recombination Pathways in Green InGaN/GaN Multiple Quantum Wells
... valence band are pumped onto conduc- tion band to generate excited carriers that far beyond the bandgap of InGaN well by absorbing the incident UV photons, and then parts of excited carriers relax to the ...
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Electronic properties of quantum wells for field effect transistor applications
... layer thicknesses. In addition the input file contained values specifying the applied gate bias, the size of the iterative step and the convergence criteria for the routine. After successful convergence of the ...
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Optimization of electron Raman scattering in double rectangular quantum wells
... electronic structure of nanostructures and other materials can be studied through the use of Raman scattering processes con- sidering different polarizations of incident and emitted radiation[4, ...double ...
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Spin photocurrent spectra induced by Rashba and Dresselhaus type circular photogalvanic effect at inter band excitation in InGaAs/GaAs/AlGaAs step quantum wells
... QW structure will not only destroy the structure inver- sion symmetry by a step potential, but also introduce an additional interface compared to symmetrical ...
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“Smart Design” of Quantum Wells and Double Quantum Wells Structures
... (quantum wells and superlattices) based on the combination of Inverse Scattering Problem Method and the direct solution of the eigenvalue prob- lem for the Schrödinger equation with reconstructed ...
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Intersubband Transitions in Quantum Wells
... Proceedings of a NATO Advanced Research Workshop on Intersubband Transitions in Quantum Wells,.. held September 9-14,1991, in Cargese, France.[r] ...
The atomic structure of polar and non-polar InGaN quantum wells and the green gap problem
... The green gap in nitride LEDs may in part be attributed to in- ternal electric fields due to the large spontaneous and piezo- electric polarisations that produce high fields of ∼ 10 6 Vcm 1 across the QWs. The active ...
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Transport anisotropy in Ge quantum wells in the absence of quantum oscillations
... Ge quantum well in tilted magnetic fields up to 18 T and at temperatures up to 8 ...no quantum oscillations are seen rules out the formation of stripes as a possible ...though quantum oscillations ...
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Quantum Supercurrent Transistors in Silicon Quantum Wells Confined by Superconductor Barriers
... S-Si-QW-S structure is revealed by the find- ings of the quantization of the supercurrent and the multiple Andreev reflection (MAR) observed both across and along the Si-QW plane thereby identifying the spin ...
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