Bipolar transistors
Impact of ex situ and in situ cleans on the performance of bipolar transistors with low thermal budget in situ phosphorus doped polysilicon emitter contacts
... twins. Bipolar transistors fabricated using this high defect den- sity silicon emitter contact have an emitter resistance as low as 21 m even after a light emitter anneal of 30 s at 900 ...Si bipolar ...
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Silicon Germanium Heterojunction Bipolar Transistors for Extremely Low Noise Applications
... Although their broadband noise performance is excellent, a limiting problem with HEMT devices is inherent gain fluctuations that are linked to trapping phenomena associated with surface states [7]. These gain ...
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Temperature dependence of breakdown and avalanche multiplication in In0.53Ga0.47As diodes and heterojunction bipolar transistors
... A N In Ga As lattice matched to InP is used in het- erojunction bipolar transistors (HBTs) and high electron mobility transistors for high-speed electronics. The onset of avalanche multiplication can ...
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A novel technique for CAD-optimization of analog circuits with bipolar transistors
... the bipolar transistors should be selected among sev- eral device types offered by the fabrication foundry, which have only few (or even no) adjustable parameters (X-FAB AG, ...
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110GHz fT Silicon Bipolar Transistors Implemented using Fluorine Implantation for Boron Diffusion Suppression
... circuit bipolar transistors, and then on electron lithography for submicrometer integrated ...emitter bipolar transistors, high-speed bipolar and BiCMOS technologies, gate delay ...
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Optoelectronic mixing in heterojunction bipolar transistors
... all bipolar transistors are designed to have very thin bases so that most o f the injected electrons from the emitter can diffuse through the base and reach the reverse-biased base-collector junction with ...
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Design, characterisation, and numerical simulation of double heterojunction bipolar transistors for microwave power applications
... region from a wide bandgap at the emitter end to a narrow bandgap at the collector end. The electric field produced inside the base adds a drift component to [r] ...
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Characterization of integrated bipolar transistors using computer aided measurements and optimisation
... diode capacitance C Id be obtained using optimization, cou bc' the author concludes that, the low frequency measurements on these components is not essential... This is to avoid approxim[r] ...
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Generation of short electrical pulses based on bipolar transistors
... The use of rf-transistors as key components in comb gener- ators provides a new, more comfortable and more cost ef- fective way of generating short electrical pulses as compared to step-recovery diodes (HP, 1988). ...
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AC voltage sag-swell compensator based on unified non-inverting and inverting output voltage AC chopper
... gate bipolar transistors (IGBTs) are employed, and an inner inductor L and output capacitor C are used as energy storage elements to extend the voltage output ...
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Ordering of In and Ga in Epitaxially Grown In0 53Ga0 47As Films on (001) InP Substrates
... InGaAs, one of the III-V ternary alloys, is utilized in electronic devices such as high electron-mobility transistors HEMT17 or hetero bipolar transistors HBT.18 The atomic ordering in I[r] ...
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Piezoelectric Transformers to the Future Integrated IGBT Gate Drivers
... In the coming area of ubiquitous computing, nanotechnology, increasingly compact or miniaturized power sources and preferably mobile & satellite systems are expected. In this paper, the application of piezoelectric ...
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Leakage Current Mechanisms in SiGe HBTs Fabricated Using Selective and Nonselective Epitaxy
... circuit bipolar transistors, and then on electron lithography for sub-micron integrated cir- ...emitter bipolar transistors, high-speed bipolar and BiCMOS technologies, gate delay ...
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Development of a gate drive with overcurrent protection circuit using IR2110 for fast switching half bridge converter
... gate bipolar transistors (IGBTs) and metal oxide semiconductor field effect transistors (MOSFETs)) are still major components of power electronic converters, considerable attempts are being made to ...
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The influence of BF2 and F implants on the 1/f noise in SiGe HBTs with a self aligned link base
... heterojunction bipolar transistors (HBTs), there is some evidence to suggest that the link base can be a source of noise if it is not correctly opti- mized [12], ...in transistors annealed at 975 C ...
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Optimizing the train-catenary electrical interface in AC railways through dynamic control reconfiguration
... Insulated-Gate Bipolar Transistors (IGBT) based con- verters (single H-bridges, interleaved bridges or mul- tilevel converters) operate under some kind of pulse- width modulation (PWM) ...
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Bipolar-valued Fuzzy Finite Switchboard State Machines
... of bipolar fuzzy valued sets, the present author [6] introduced the concepts of bipolar fuzzy finite state machines, bipolar successors, bipolar subsystems and studied related ...for ...
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Bipolar Soft Topological Spaces
... this bipolar soft set in decision making ...of bipolar soft set along with some operations and application of ...of bipolar soft sets. In [11], another definition of bipolar soft sets was ...
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Amyloid Precursor-Like Protein 2 deletion-induced retinal synaptopathy related to congenital stationary night blindness: structural, functional and molecular characteristics
... when bipolar cells are generated and con- nections with ganglion cells are ...and bipolar cells are located ...and bipolar cells, APLP2 im- munostaining was ...
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Design Methodology for Operational Trans-Conductance Amplifier by using Multi Objective Optimization Techniques
... Izi is the normalization current, μ, Cox and n are manufacturing technology parameters, W / L represents the dimensions of the transistors and φt is the thermal voltage. From the above equations it can be observed ...
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