Doped GaAs
Acceptor binding energy in delta-doped GaAs/AlAs multiple-quantum wells
... -doped GaAs/AlAs multiple-quantum wells ~MQWs! with doping at the well center, there have been few reports of either experimental or theoretical ...of GaAs/AlAs MQWs with Be d -doped at the ...
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Low-frequency noise properties of beryllium δ-doped GaAs/AlAs quantum wells near the Mott transition
... Be doped GaAs/AlAs QWs, both above and below the Mott transition, have been investi- gated for temperatures varying from 77 K to 350 K and over the frequency range from 10 Hz to 20 ...AlAs/ GaAs ...
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Remote impurity scattering in modulation doped GaAs/AlxGa1 xAs heterojunctions
... in a semi-infinite array 380 Å thick placed 400 Å behind the line ~ see the inset to Fig. 4 ! . For illustrative purposes, we have assumed that the 2.2 3 10 11 cm 2 2 electrons in the 2DEG come from impurities closest to ...
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Photoreflectance and surface photovoltage spectroscopy of beryllium-doped GaAs/AlAs multiple quantum wells
... in GaAs/ AlAs MQWs has already been investigated theoretically 9 and experimentally by far- infrared absorption 7,10 and photoluminescence 9,11 ...-doped GaAs/ AlAs structures is of particular ...
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Electrical characteristics of silicon-doped GaAs lateral p-n junctions
... heavily doped n-type samples where Si-Y defects were not ...Si-doped GaAs grown at low temperatures and therefore containing large quantities of gallium vacancies revealed high concentrations of Si-X ...
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Effect of the Doping Layer Concentration on Optical Absorption in Si δ Doped GaAs Layer
... - doped semiconductor structures have been of great interest because of their technological utility in electronic and photonic devices ...of GaAs at high donors ...- doped as a representative example ...
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A study of photomodulated reflectance on staircase like, n doped GaAs/Alx Ga1−xAs quantum well structures
... Experimental results on reflectivity (R), PL, and PR spectra of ANA14 and IQE14 structures are given in Figure 3. Calculated PR spectra are also included in the figure. The R spectra are given just for information and ...
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Organisation of p-type two dimensional semi-conductor structures for FET applications
... 6.16 - Effective mass as a function of hole density in a graded QW structure 6.17 - Theoretical electron transport mobility in 5-doped GaAs.. 6.18 - Theoretical electron quantu[r] ...
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Nonlinear dynamics of non equilibrium holes in p type modulation doped GaInNAs/GaAs quantum wells
... During the past decade, dilute nitrides, particularly the quaternary material system of GaInNAs/GaAs, have attracted a great deal of attention, both because of unu- sual physical properties and potential ...
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A GaAs-based self-aligned stripe distributed feedback laser
... p-doped GaAs was overgrown to in fi ll and planarize the index-coupled DFB grating, before 600 nm n-doped GaInP ( lattice-matched to GaAs ) opto-electro- nic con fi nement layer, and 20 nm of ...
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Electron transport in a GaPSb film
... delta- doped GaAs single quantum well [19] and the work per- formed by Yildiz et ...delta-doped GaAs [13], the observation of non-monotonic T dependence of n , that is, it first decreases and ...
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Electronic Coupling in Nanoscale InAs/GaAs Quantum Dot Pairs Separated by a Thin Ga(Al)As Spacer
... In summary, vertical energy transfer for InAs/GaAs QD pair structures with and without an AlGaAs barrier was compared. Low-temperature PL measurements show that the QD peaks shift to the blue and the relative PL ...
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Bipolar Effects in Photovoltage of Metamorphic InAs/InGaAs/GaAs Quantum Dot Heterostructures: Characterization and Design Solutions for Light Sensitive Devices
... GaAs QD structures in the case of electrically active si-GaAs substrate. Both nanostructures manifest a bipolar PV caused by a competition of the components originated from the oppositely sloped band ...
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Rolled Up Nanotech: Illumination Controlled Hydrofluoric Acid Etching of AlAs Sacrificial Layers
... a GaAs substrate with an AlAs sacrificial layer) releases from the substrate as the sacrificial layer is preferentially removed by the HF at a previously defined starting edge and begins to roll up in order to ...
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Measurement of the spin temperature of optically cooled nuclei and GaAs hyperfine constants in GaAs/AlGaAs quantum dots
... in GaAs/AlGaAs quantum dots with high accu- racy using a new approach enabled by manipula- tion of the nuclear spin states with radiofrequency ...Moreover, GaAs hyperfine material con- stants are measured ...
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Effects of Annealing on GaAs/GaAsSbN/GaAs Core Multi shell Nanowires
... (111) GaAs peak and did not exhibit any other distinct peak as reported previously [11] on as- grown nitride core-shell ...lattice-matched GaAs/GaAsSbN/ GaAs core-shell structure, which suggests that ...
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Nano structure fabrication of GaAs using AFM tip induced local oxidation method: different doping types and plane orientations
... p-type GaAs(100) and GaAs(711), respectively, with a doping concentration of approximately 10 19 cm -3 , at room temperature during the ...the GaAs reactive surface by applying a negative bias ...
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Optical and Mechanical Characterization of InAs/GaAs Quantum Dot Solar Cells
... State of the art triple junction solar cells have achieved in excess of 43% efficiency. In order to extend this beyond a multijunction-only design, novel approaches to photon conversion must be sought and realized. Two ...
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Performance assessment of multijunction solar cells incorporating GaInNAsSb
... The efficiency improvement upon adding GaInNAsSb junction to a double- or triple-junction cell shows clear dependence on the illumination spectrum. When GaInP/ GaAs/Ge triple-junction cells are compared with ...
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Effect of Interfacial Bonds on the Morphology of InAs QDs Grown on GaAs (311) B and (100) Substrates
... Self-assembled quantum dots (QDs) have been intensively studied over the past decades in both fundamental and application fields. To date, several systems have exhibited great optical properties and find their ...
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