effect transistors
Hysteresis modeling in ballistic carbon nanotube field-effect transistors
... Abstract: Theoretical models are adapted to describe the hysteresis effects seen in the electrical characteristics of carbon nanotube field-effect transistors. The ballistic transport model describes the ...
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Review on Tunnel Field Effect Transistors (TFET)
... Field Effect Transistor), reduction in supply voltage slow down the sub threshold swing which cannot be lowered by ...Field Effect Transistors) is promising alternative to MOSFET because it is a ...
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High Temperature Stable Operation of Nanoribbon Field Effect Transistors
... Abstract We experimentally demonstrated that nanorib- bon field-effect transistors can be used for stable high- temperature applications. The on-current level of the nanoribbon FETs decreases at elevated ...
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All-GaN Integrated Cascode Heterojunction Field Effect Transistors
... Abstract — All-GaN integrated cascode heterojunction field effect transistors were designed and fabricated for power switching applications. A threshold voltage of +2 V was achieved using a fluorine ...
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Ambipolar Organic Field Effect Transistors Based on Indigo Derivatives
... [14] (a) J. D. Yuen and F. Wudl, “Strong acceptors in donor–acceptor polymers for high performance thin film transistors,” Energy Environ. Sci., vol. 6, pp. 392-406, 2013; (b) Y. Zhao, Y. Guo, and Y. Liu, “Recent ...
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Progresses in organic field-effect transistors and molecular electronics
... In the past years, organic semiconductors have been extensively investigated as electronic materials for organic field-effect transistors (OFETs). In this review, we briefly summarize the current status of ...
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Uniformly Nanopatterned Graphene Field Effect Transistors with Enhanced Properties
... We have successfully fabricated and characterized highly uniform nanopatterned graphene (NPG). Thin anodized aluminum oxide nanomask was prepared by facile self-assembly technique without using polymer buffer layer, ...
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Terahertz Frequency Comb in Graphene Field-Effect Transistors
... Field-effect transistors (GFETs) are excellent candidates for all- electric, low-power radiation sources and detectors based on integrated circuit ...
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Development of a deep submicron fabrication process for tunneling field effect transistors
... The requirements placed upon next-generation devices include high on-state current, low power supply voltages, and low subthreshold swing. Tunneling Field Effect Transistors (TFETs) have been of recent ...
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I-V characteristics model for Carbon Nanotube Field Effect Transistors
... Air Carbon nanotubes CNTs have attracted great attention as potential materials for electronic devices because of their one-dimensional structure and tubular honeycomb network in the nanometer scale. They can be either ...
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Influence of post annealing on the off current of MoS2 field effect transistors
... etc.), are widely used recently for fabricating next- generation nanoelectronics [1-10]. This is because of the high electron mobility of 2D materials, compared with the original bulk material. Typically, graphene shows ...
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An Approach to Decrease Dimensions of Field Effect Transistors
... Based on obtain in previous section relations we analyzed dynamics of redistribution of dopants in a semiconductor heterostructure. Typical distributions of dopants at fixed value of annealing time and different values ...
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Junctionless ferroelectric field effect transistors based on ultrathin silicon nanomembranes
... The paper reported the fabrication and operation of nonvolatile ferroelectric field effect transistors (FeFETs) with a top gate and top contact structure. Ultrathin Si nanomembranes without source and drain ...
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Nanoparticles of Cu2ZnSnS4 as performance enhancing additives for organic field-effect transistors
... CZTS nanoparticles have been used as additives for the fabrication of solution-processed OFETs. The nanoparticle composites (5% CZTS) with 5T-TTF had a hole mobility 68% higher than devices using only the oligomer, ...
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Dependence of charge carrier injection on the interface energy barrier in short channel polymeric field effect transistors
... The influence of contact materials on the electrical characteristics of field-effect transistors made from poly(3-hexylthiophene) with short-channel lengths of 80 nm is investigated. The thermally activated ...
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Effect of UV/ozone treatment on polystyrene dielectric and its application on organic field effect transistors
... Due to the low fabrication costs and wide applications, such as large area sensor arrays, flat panel displays, and radio frequency identification tags, organic field-effect transistors (OFETs) as an ...
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CONTROLLING MECHANISMS OF SPACE-CHARGE REGION IN COMPOUND FIELD-EFFECT TRANSISTORS
... Conventionally, field-effect transistors are operated in three classical ways of switching, i.e. the common source, common drain and common gate. But these three cases are not the only ones and in no way ...
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Naphthalocyanine thin films and field effect transistors
... In this paper we investigate the growth of Nc thin films by sublimation and show that the resulting organic layers can be used to form p-type field effect transistors which can be operated under both vacuum ...
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Low noise narrow band amplification with field effect transistors
... The noise factor F is defined as the ratio of the total output noise power in the amplifier load to the noise power at the output due to the thermal noise of the source resistance... The[r] ...
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All-electric all-semiconductor spin field-effect transistors
... present an all-electric and all-semiconductor spin field effect transistor, in which these obsta- cles are overcome by employing two quantum point contacts as spin injectors and detectors. Distinct engineering ...
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