GaAs-AlGaAs
Dynamic nuclear polarization in InGaAs/GaAs and GaAs/AlGaAs quantum dots under nonresonant ultralow-power optical excitation
... and GaAs/AlGaAs ...In GaAs dots low-power DNP is systemat- ically found to be less efficient than in InGaAs dots: we attribute this to the dark-bright exciton mixing stem- ming from the low-symmetry ...
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Development of AlGaAs /GaAs/ AlGaAs Step Quantum well to produce Tunable Photo Detector and Electro Absorption Modulator for noise reduction
... Epitaxial crystal growth techniques such as Molecular beam epitaxy or MOCVD allows to have monolayer upto 3 armstrong control in the chemical composition of the crystal. Nearly every semiconductor crystal such as ...
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Anisotropic in plane spin splitting in an asymmetric (001) GaAs/AlGaAs quantum well
... anisotropy of the in-plane spin splitting. We found that this anisotropy is more than 19% in this single asym- metric (001) GaAs/AlGaAs QW. We also checked the photogenerated spin concentration dependence ...
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Micro photoluminescence of GaAs/AlGaAs triple concentric quantum rings
... A systematic optical study, including micro, ensemble and time resolved photoluminescence of GaAs/AlGaAs triple concentric quantum rings, self-assembled via droplet epitaxy, is presented. Clear emission ...
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Temperature and electron density dependence of spin relaxation in GaAs/AlGaAs quantum well
... two GaAs/AlGaAs QWs with different structural ...designed GaAs/AlGaAs QW comparing with the symmetrical one, indicating the strong effect of Rashba SO coupling on spin ...in ...
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Comparative Study of Heterostructure Barrier Diodes in the GaAs/AlGaAs System
... Abstract: A comparative study of the electron transport property and operation of the Potential Well Barrier (PWB) diode and Planar-doped Potential-well Barrier (PPB) diode has been carried out in this study. Both diodes ...
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Nanostructure and strain properties of core-shell GaAs/AlGaAs nanowires
... ZB GaAs lattice parameters as reference, we have determined, from HRTEM images, the lattice parameters of the WZ GaAs/AlGaAs structure to be = ...the AlGaAs shell, no condensation of a new Ga ...
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Room temperature spin diffusion in (110) GaAs/AlGaAs quantum wells
... (110)-grown GaAs/AlGaAs QW, the DP spin relaxation mechanism is not efficient for electron spins parallel to the growth direction because the spin orientation of electrons is parallel to the direction of ...
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Influence of doping density on electron dynamics in GaAs/AlGaAs quantum cascade lasers
... output characteristic and carrier heating in GaAs/ AlGaAs midinfrared QCLs. The employed theoretical model is based on a fully nonequilibrium Schrödinger-Poisson analysis of the coupled scattering rate and ...
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Growth and Characterisation of GaAs/AlGaAs Core-shell Nanowires for Optoelectronic Device Applications
... planar GaAs material system has been extensively studied and used in ...Accordingly, GaAs nanowires are the prime candidates for nano-scale ...of GaAs nanowires has yet to match that of ...
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Measurement of the spin temperature of optically cooled nuclei and GaAs hyperfine constants in GaAs/AlGaAs quantum dots
... in GaAs/AlGaAs quantum dots with high accu- racy using a new approach enabled by manipula- tion of the nuclear spin states with radiofrequency ...Moreover, GaAs hyperfine material con- stants are ...
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Laterally pumped GaAs/AlGaAs quantum wells as sources of broadband terahertz radiation
... were considered, a digitally graded, quasiparabolic well and a simple square well, and their performance was compared. Despite the higher overall emitted power from the square well system, the emission spectrum of the ...
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Theoretical analysis of GaAs/AlGaAs quantum dots in quantum wire array for intermediate band solar cell
... A GaAs quantum dot (QD) array embedded in a AlGaAs host material was fabricated using a strain-free approach, through combination of neutral beam etching and atomic hydrogen-assisted molecular beam epitaxy ...
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Theory of Zero Resistance States Generated by Radiation in GaAs/AlGaAs
... Mani observed zero-registance states similar to those quantum-Hall-effect states in GaAs/AlGaAs but without the Hall resistance plateaus upon the application of radiations [R. G. Mani, Physica E 22, 1 ...
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Mid-infrared detection in p-GaAs/AlGaAs heterostructures with a current blocking barrier
... interfacial work function at the heterojunction. Therefore, the spectral range of the photodetector can be tailored by controlling x. Depending on their energy, the holes can escape to either the S-O band or the H-H/L-H ...
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Measurement of the spin temperature of optically cooled nuclei and GaAs hyperfine constants in GaAs/AlGaAs quantum dots
... quantum dot structure. On the other hand, as we show below, the precise knowledge of the elec- tron wavefunction F (r, z) is not required for the calculations of the hyperfine shifts (based on Supplementary Eq. 2). It is ...
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Ion beam effects in GaAs-AlGaAs materials and devices
... With protons, the strong dynamic annealing in AlGaAs and the small size of the damage clusters means that increasing the irradiation temperature has very little effect on the overlap of [r] ...
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Optical Gain and Confinement in Gaas/Algaas Structure Quantum Well Lasers
... A great attention has been drawn on semiconductor quantum well (QW) structures due to the virtue of their novel electronic optical properties. The exceedingly high optical gain at very low current densities is a main ...
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Non-universality of scaling exponents in quantum Hall transitions
... in GaAs/AlGaAs heterostructures, scattering processes are usually dominated by ionized impurities in the donor layer, which are separated from the 2DES by a spacer layer which makes the correlation length ...
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Self-consistent solutions to the intersubband rate equations in quantum cascade lasers: Analysis of a GaAs/AlxGa1-xAs device
... Quantum cascade lasers have been the focus of much research since they were developed in 1994. 1,2 They have traditionally been based on a InGaAs/AlInAs structure so that the growth could be lattice matched to InP ...
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