GaAs/AlGaAs quantum well structures
Intersubband terahertz transitions in Landau level system of cascade GaAs/AlGaAs quantum well structures in strong tilted magnetic field
... Recently, the possibility to achieve a population inver- sion in the system of Landau levels (LL) in cascade quantum well structures in strong magnetic field under a condition of sequential resonant ...
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Room temperature spin diffusion in (110) GaAs/AlGaAs quantum wells
... (110)-grown GaAs/AlGaAs QW, the DP spin relaxation mechanism is not efficient for electron spins parallel to the growth direction because the spin orientation of electrons is parallel to the direction of ...
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Influence of doping density on electron dynamics in GaAs/AlGaAs quantum cascade lasers
... The subband energies and wave functions were calcu- lated by solving the envelope function Schrödinger equation in an effective mass approximation with conduction band dispersion nonparabolicity taken into account via ...
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Laterally pumped GaAs/AlGaAs quantum wells as sources of broadband terahertz radiation
... Typical quantum well structures have a limited number of bound states 共subbands兲, of the order of 10 or so, and including all of them present no difficulties on the computational ...real ...
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Measurement of the spin temperature of optically cooled nuclei and GaAs hyperfine constants in GaAs/AlGaAs quantum dots
... studied structures, the most efficient nuclear spin pumping mechanism is via resonant optical injection of spin polarized excitons into the high-energy type B dots with a subsequent tunneling and relaxation into ...
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Micro photoluminescence of GaAs/AlGaAs triple concentric quantum rings
... rings structures with good rota- tional symmetry appeared, with inner, middle and outer ring diameters of around 80 nm, 140 nm and 210 nm respectively, while heights were around 7 nm for the inner rings, 4 nm for ...
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Novel structures for lattice mismatched infrared photodetectors
... combine GaAs and AlGaAs multiplication regions with a ...the quantum efficiencies currently exhibited are very low (0.01% for the GaAs design and ...the AlGaAs design). These low ...
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Characterisation of temperature dependent parameters of multi quantum well (MQW) Ti/Au/n AlGaAs/n GaAs/n AlGaAs Schottky diodes
... sophisticated structures such as superlattices (SL’s), quantum wells (QW’s), quantum dots (DQ’s), quantum wires (QW’s), ...the GaAs/Al x Ga 1-x ...
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Development of AlGaAs /GaAs/ AlGaAs Step Quantum well to produce Tunable Photo Detector and Electro Absorption Modulator for noise reduction
... in quantum well devices is one of the most important factor in the design of the quantum structures and is proportional to the amount of incident light that is absorbed in the ...as ...
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Optical Gain and Confinement in Gaas/Algaas Structure Quantum Well Lasers
... semiconductor quantum well (QW) structures due to the virtue of their novel electronic optical ...in quantum well and partly because of greater population inversion at a given carrier ...
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Gain optimization in optically pumped AlGaAs unipolar quantum-well lasers
... in quantum wells (QWs) by Kazarinov and Suris in 1971 [1], there has been considerable research effort in this ...the quantum cascade laser (QCL), demonstrated by Faist et ...the GaAs–AlGaAs ...
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Droplet etching of deep nanoholes for filling with self aligned complex quantum structures
... in AlGaAs surfaces and subsequent hole filling with ...like quantum dot molecules ...high quantum dot uniformity and narrow luminescence linewidth, which are often found in applications, set limits ...
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Electron Microscopy Studies of Non Local Effects' Impact on Cathodoluminescence of Semiconductor Laser Structures
... Spatially and spectrally resolved cathodoluminescence (CL) studies performed in a scanning electron microscope (SEM) or a scanning transmission electron microscope (STEM) are widely applied to determine the luminescence ...
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Tuning of Rashba/Dresselhaus Spin Splittings by Inserting Ultra Thin InAs Layers at Interfaces in Insulating GaAs/AlGaAs Quantum Wells
... excitation, has been effectively tuned by changing the well width of QWs and by inserting a one-monolayer-thick InAs layer at interfaces of GaAs/AlGaAs QWs. Reflectance difference spectroscopy (RDS) ...
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Anisotropic in plane spin splitting in an asymmetric (001) GaAs/AlGaAs quantum well
... The properties of spins in semiconductor materials have attracted much more attentions since the invention of spintronics and spin-based quantum information [1-3]. In those fields, the spin-orbit coupling (SOC) ...
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Excitation energy dependent nature of Raman scattering spectrum in GaInNAs/GaAs quantum well structures
... 7. Balkan N, Mazzucato S, Erol A, Hepburn CJ, Potter RJ, Boland-Thoms A, Vickers A, Chalker PR, Joyce TB, Bullough TJ: Effect of fast thermal annealing on the optical spectroscopy in MBE- and CBE-grown GaInNAs/ ...
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MBE grown GaAsBi/GaAs multiple quantum well structures : structural and optical characterization
... rst quantum well (QW). The nominal well thickness in every sample was 8 ...each well/barrier interface for 1 min to allow excess Bi ...
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Dynamic nuclear polarization in InGaAs/GaAs and GaAs/AlGaAs quantum dots under nonresonant ultralow-power optical excitation
... conductor quantum dots (QDs) where quantum degrees of freedom of single charge particles and photons are ad- ...In quantum dots nuclear spins are capable of producing ef- fective (Overhauser) ...
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Ultra High Purity Gallium and Indium for Emerging Iii-V Epitaxial Nanoelectronics Materials Technologies: An Overview
... of GaAs and InP devices coupled with lattice match and tailorable material properties of GaAs ternary and quaternary based multi-layered epi-structures make them very special candidates in ...of ...
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GaAs-Based Superluminescent Light-Emitting Diodes with 290-nm Emission Bandwidth by Using Hybrid Quantum Well/Quantum Dot Structures
... spectral bandwidth devices. Based on this newly observed effect, we then report on the first hybrid QW/QD SLD, which is capable of emitting an emission bandwidth of 290 nm centered at 1200 nm with a corresponding output ...
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