GaAs multiple quantum wells
Optical and spin properties of localized and free excitons in GaBi ₓAs₁-ₓ /GaAs multiple quantum wells
... In this paper, we have investigated the effect of disorder on the optical and spin properties of GaBiAs/GaAs multiple quantum wells (MQWs). We have observed an anomalous negative diamagnetic ...
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MBE grown GaAsBi/GaAs multiple quantum well structures : structural and optical characterization
... GaAsBi/GaAs multiple quantum well p–i–n diodes were grown by molecular beam ...that multiple quantum well regions with clearly de fi ned well periodicities were ...40 wells were ...
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Picosecond acoustics in single quantum wells of cubic GaN/(Al,Ga)N
... semiconductor quantum wells (QWs) ...nitride quantum wells are performed on multiple QWs based on wurtzite (hexagonal) h -GaN and its ...or GaAs-based phononic chips, thus, ...
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Tuning of Rashba/Dresselhaus Spin Splittings by Inserting Ultra Thin InAs Layers at Interfaces in Insulating GaAs/AlGaAs Quantum Wells
... In this paper, we tune the RD ratio by changing the well widths and by inserting an ultra-thin InAs layer with a thickness of one monolayer (ML) at interfaces of GaAs/AlGaAs multiple ...
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Aperiodic and Asymmetric Multiple Quantum Well Photonic Devices: A Novel Transfer Matrix Based Model
... of GaAs/AlGaAs layers with 30/48/48/52/12/42/14/32/18/40/20/36/24/36/26/36/28/52/48A 0 thickness ...two wells of the first structure have widely different ...adjacent wells are coupled through the ...
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Spin relaxation and carrier recombination in GaInNAs multiple quantum wells
... for quantum well and quan- tum dot lasers operating at technologically important wavelengths (whilst simultaneously benefitting from the maturity of GaAs-based technology), and have been the subject of ...
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Room temperature spin diffusion in (110) GaAs/AlGaAs quantum wells
... Transient spin grating experiments are used to investigate the electron spin diffusion in intrinsic (110) GaAs/AlGaAs multiple quantum well at room temperature. The measured spin diffusion length of ...
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Acceptor binding energy in delta-doped GaAs/AlAs multiple-quantum wells
... -doped GaAs/AlAs MQWs were grown by molecular beam epitaxy with doping at the quantum-well center, on a semi-insulating ~100! GaAs substrate in a VG V80 H reactor equipped with all solid ...the ...
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Stimulated Emission in AlxGa1-xAs -GaAs Single and Multiple Quantum Well Heterostructure.
... in quantum wells shifts in energy as a function of well width[14, 15] and at least 10 17 /cm 3 impurities doping concentration are needed to support the stimulated ...
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Low-frequency noise properties of beryllium δ-doped GaAs/AlAs quantum wells near the Mott transition
... doped GaAs/AlAs QWs for developing THz sensors and sources has stimulated extensive scientific ...d-doped GaAs/AlAs multiple QWs have been studied, 23 the effect of quantum well confinement on ...
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Aperiodic Fibonacci Series Multiple Quantum Wells Lead to Topological Quantum Computation
... chain multiple quantum wells structures ...exotic quantum phases of matter that host quasiparticles with non-Abelian anyons partially due to the possibility of topological quantum ...
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Photoreflectance and surface photovoltage spectroscopy of beryllium-doped GaAs/AlAs multiple quantum wells
... -doped GaAs/ AlAs multiple quantum well 共QW兲 structures designed for sensing terahertz 共THz兲 ...the quantum index has shown that an average half monolayer well width fluctuations is mostly ...
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ADAPTIVE COLOR FILTER ARRAY INTERPOLATION ALGORITHM BASED ON HUE TRANSITION AND EDGE DIRECTION
... of multiple quantum wells with alternating thin layers of wider and narrower ...potential wells. As the dimensions of the potential wells are reduced to the order of 10 nm, the movement ...
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Decoherence and Entanglement Simulation in a Model of Quantum Neural Network Based on Quantum Dots
... the quantum neural network (QNN) was first formulated by ...of quantum neural networks have been considered, see the reviews [2, ...keep quantum coherence for sufficiently long ...
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An analysis of Hall mobility in as grown and annealed n and p type modulation doped GaInNAs/GaAs quantum wells
... the quantum well and the holes in the wide GaAs barriers due to the full ionization of acceptors further away from the depletion regions as well as the thermionic emission of holes from the quantum ...
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Optical properties of GaN nanorods containing a single or multiple InGaN quantum wells
... three-well multiple InGaN quantum well or a single quantum well, have been performed by photoluminescence (PL) and cathodoluminescence (CL) hyperspectral ...the quantum well emission varied ...
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Low Temperature Photoluminescence Measurement of Extremely Thin InGaAs/GaAs Multi Quantum Wells Grown by Molecular Beam Epitaxy
... Crystalline properties were analyzed with a PAN analytical X’Pert Pro Material and Research Diffractometer. It provides monochromatic Cu-Kα1 radiation (λ=1.5406 Å) of 19 arc sec divergence, which is formed by a ¼° ...
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Molecular beam epitaxy and properties of GaAsBi/GaAs quantum wells grown by molecular beam epitaxy: effect of thermal annealing
... on GaAs attract more and more attention because of their peculiar electronic ...to GaAs efficiently decreases the gap energy of this semiconductor [1] through a change in its valence band properties and ...
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Strain Controlled Recombination in InGaN/GaN Multiple Quantum Wells on Silicon Substrates
... InGaN/GaN multiple quantum well (MQW) light-emitting diodes grown on silicon substrates which were designed with different tensile stress controlling architecture like periodic Si δ -doping to the n-type ...
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Effect of hydrogen treatment temperature on the properties of InGaN/GaN multiple quantum wells
... InGaN/GaN multiple quantum wells ...InGaN quantum well (QW) for blue and green LEDs is below 800 °C to benefit indium incorporation [8, ...GaN quantum barrier (QB) is usually 50–150 °C ...
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