GaAs nanowires
Electrical and Optical Properties of Au Catalyzed GaAs Nanowires Grown on Si (111) Substrate by Molecular Beam Epitaxy
... polycrystalline GaAs on Si (111) surface, and the taper-shaped GaAs nanowires will be formed ...by GaAs zinc blende ...of GaAs are ...growth GaAs nanowires that measured ...
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Effect of a GaAsP Shell on the Optical Properties of Self-Catalyzed GaAs Nanowires Grown on Silicon
... single GaAs/GaAsP and uncapped GaAs nanowires grown on Si substrates using catalyst-free MBE ...of nanowires with a GaAsP layer. When compared to similar uncapped GaAs single ...
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Growth of Inclined GaAs Nanowires by Molecular Beam Epitaxy: Theory and Experiment
... Abstract The growth of inclined GaAs nanowires (NWs) during molecular beam epitaxy (MBE) on the rotating substrates is studied. The growth model provides explicitly the NW length as a function of radius, ...
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Probability of twin formation on self catalyzed GaAs nanowires on Si substrate
... self-catalyzed GaAs nanowires (NWs). Self-catalyzed GaAs NWs were grown on a Si substrate under various arsenic pressures using molecular beam epitaxy and the vapor-liquid-solid ...
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Vapor-liquid solid mechanism using gold colloids for the growth of GaAs nanowires
... The growth-time dependence of the wire growth process indicates that the most likely mechanism for the nanowire growth is vapor-liquid-solid (VLS) mechanisms. This procedure is similar to the ones reported by Hiruma [3] ...
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Quantitative study of GaAs nanowires catalyzed by Au film of different thicknesses
... those nanowires were measured to be less than 30 ...of nanowires gener- ally occurs preferentially at the triple-phase line at the catalyst/nanowire interface, where wurtzite and zinc- blende nuclei present ...
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n Type Doping of Vapor–Liquid–Solid Grown GaAs Nanowires
... GaAs nanowires were grown on GaAs (111)B substrates by metal – organic vapor phase (MOVPE) epitaxy in an AIX200 RF system with fully non-gaseous source config- uration ...the nanowires were ...
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Polarized recombination of acoustically transported carriers in GaAs nanowires
... bulk GaAs [5] - suggests that recom- bination takes place in a zinc blende region at the top of the nanowire, opposite to the acoustic ...the nanowires probably created during the cool- ing down after ...
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Morphological engineering of self assembled nanostructures at nanoscale on faceted GaAs nanowires by droplet epitaxy
... Fabrication of advanced artificial nanomaterials is a long-term pursuit to fulfill the promises of nanomaterials and it is of utter importance to manipulate materials at nanoscale to meet urgent demands of nanostructures ...
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Tuning Nonlinear Mechanical Mode Coupling in GaAs Nanowires Using Cross-Section Morphology Control.
... The origin of linear frequency pulling for large drive amplitude in the system discussed here is unclear, but could arise for a number of reasons. These include entering the strong bending regime for a nanowire (rather ...
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MOCVD Growth of High Quality and Density Tunable GaAs Nanowires on ITO Catalyzed by Au Nanoparticles Deposited by Centrifugation
... density-tunable GaAs nanowires (NWs) are directly grown on indium tin oxide (ITO) using Au nanoparticles (NPs) as catalysts by metal organic chemical vapor deposition ...of GaAs NWs at 430 °C were ...
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Effect of Catalyst Diameter on Vapour Liquid Solid Growth of GaAs Nanowires
... GaAs nanowires were grown on (111)B GaAs substrates using the vapour-liquid-solid (VLS) ...resulting nanowires, which had a cone-like shape, was carried ...
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Growth and Photovoltaic Properties of High Quality GaAs Nanowires Prepared by the Two Source CVD Method
... In order to compare and contrast our two-source method versus the conventional single-source CVD growth, the growth system schematics as well the result- ing morphology of GaAs NWs are shown in detail in Fig. 1. ...
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Structural Investigation of Uniform Ensembles of Self Catalyzed GaAs Nanowires Fabricated by a Lithography Free Technique
... ZB GaAs(111) reflections are clearly seen in all of the spectra, disregarding spectrum of sample NW4 which has too small NWs to gain adequate in- tensity from GaAs(111) ...The GaAs(111) re- flections ...
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Lattice parameter accommodation between GaAs(111) nanowires and Si(111) substrate after growth via Au assisted molecular beam epitaxy
... between GaAs nanowires [NWs] grown by Au-assisted molecular beam epitaxy and the underlying Si(111) ...structure GaAs islands grow with a gradually increasing lattice parameter over a transition ...
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Growth and Characterisation of GaAs/AlGaAs Core-shell Nanowires for Optoelectronic Device Applications
... semiconductor nanowires have been investigated as key components for future electronic and optoelectronic devices and systems due to their direct band gap and high electron ...planar GaAs material system ...
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A High Diffusive Model for Nanomaterials
... i.e. GaAs nanowires and ZnO nanoparticles on which terahertz time-resolved spectroscopy has revealed different time transport regimes with high diffusion pro- cesses at short times of the order of the ...
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Role of Sb in the epitaxial growth of Au-nucleated III-V nanowires
... in nanowires by growth conditions and seed particle engineering, but has not been achieved in standard III-V nanowires until ...growing nanowires “naturally” in the <111>A ...gold-seeded ...
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Submonolayer InGaAs/GaAs quantum dot solar cells
... Submonolayer (SML) QDs are grown by depositing strained InAs with less than one monolayer coverage on the GaAs matrix. They have emerged as an alternative low-dimensional nanostruc- ture to the conventional ...
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Measurement of the spin temperature of optically cooled nuclei and GaAs hyperfine constants in GaAs/AlGaAs quantum dots
... [19] Atkinson, P., Zallo, E., and Schmidt, O. G. In- dependent wavelength and density control of uniform GaAs/AlGaAs quantum dots grown by infilling self- assembled nanoholes. J. Appl. Phys. 112, 054303 (2012). ...
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