GaAs quantum well
The effect of magnetic field on the impurity binding energy of shallow donor impurities in a Ga1−xInx Ny As1−y/GaAs quantum well
... is well known that a magnetic field considerably affects the optical and electronic properties of ...GaInNAs/GaAs quantum well (QW) under the magnetic ...
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Observation of the transition from lasing driven by a bosonic to a fermionic reservoir in a GaAs quantum well microcavity
... recombination as well as exciton formation. The kink in the photocurrent and reduced slope for large excitation powers indicate a sudden increase of one of the loss channels. Since the kink coincides with the ...
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Crystallographic Orientation-dependent Optical Properties of InGaSb/GaAs Quantum Well Architecture
... A quantum well (QWs), literally a potential well with only discrete energy values, comprised of Gallium Arsenide (GaAs) and of related III-V materials exhibits appreciable current conducting ...
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Excitation energy dependent nature of Raman scattering spectrum in GaInNAs/GaAs quantum well structures
... causes a large redshift of the band gap; therefore, in- corporation of N into the III-V lattice brings more flexibility to tailor the band gap of the material [5]. However, the optical quality of dilute nitrides is ...
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Experimental verification of the very strong coupling regime in a GaAs quantum well microcavity
... 0.62 Ω is presented in Figure 3. Fig. 3(a) shows reflectance spectra at 0T and 5T where again both polariton dips are shifted to higher energies with increasing magnetic field. At 5T, the diamagnetic shift of the LP ...
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The Capacitance Modulated by the Convolution between Optical and Electrical Signals Using the GaAsN/GaAs Quantum Well
... 0.02 Hz), which is easier to measure. A complicated and expensive lock-in amplitude system is not required to achieve this function. A device with light responsive conductance, such as a GaAsN/GaAs QW is ...
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Transverse magnetic focussing of heavy holes in a (100) GaAs quantum well
... is the focussing path length. Figure 4 ( b ) shows the amplitude of the fi rst focussing peak as a function of the focussing path length p d 2 on a semilog plot. The exponential decay of the focussing signal gives a ...
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A THEORETICAL EVALUATION OF VARIATION OF BINDING ENERGY OF THE GROUND STATE FOR A DONOR IN QUANTUM WELL IN THE PRESENCE OF TITLED MAGNETIC FIELD
... a GaAs quantum well in the presence of magnetic field titled in the growth ...of quantum well ...of well width L 0 (A o ) keeping title angle Ѳ constant and second as a function ...
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Effects of an intense, high frequency laser field on bound states in Ga1 − xInx Ny As1 − y/GaAs double quantum well
... GaInNAs/GaAs quantum well (QW) lasers have been attracting significant scientific interest mainly due to their applications in 1.3- or 1.55-μm optical fiber communica- tion [6-12]. These lasers are ...
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Low-frequency noise properties of beryllium δ-doped GaAs/AlAs quantum wells near the Mott transition
... In this work, we complement this family of experimental techniques by showing that low-frequency noise measure- ments are useful method to extract a large variety of informa- tion investigating beryllium d-doped ...
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Anisotropic in plane spin splitting in an asymmetric (001) GaAs/AlGaAs quantum well
... 8-nm-wide GaAs quantum well, the other sloping barrier grown with content of Al changing from ...5-nm GaAs layer to avoid the oxidation of ...
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Ultrashort electromagnetic pulse control of intersubband quantum well transitions
... semiconductor quantum wells has led to the experimental observation of sev- eral interesting and potentially useful effects, such as tunneling-induced transparency [1,2], electromagneti- cally induced transparency ...
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Observation of microwave induced resistance oscillations in a high mobility two dimensional hole gas in a strained Ge/SiGe quantum well
... Observation of MIRO in Ge/SiGe opens a pathway to further interesting experiments. In particular, employing higher microwave frequencies should increase the number of observed oscillations allowing a reliable measurement ...
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Intersubband terahertz transitions in Landau level system of cascade GaAs/AlGaAs quantum well structures in strong tilted magnetic field
... Finally, the terahertz transitions between Landau levels of different subbands in resonant tunneling quantum well structures in a tilted magnetic field were considered. An effective way was proposed to lift ...
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GaAs-Based Superluminescent Light-Emitting Diodes with 290-nm Emission Bandwidth by Using Hybrid Quantum Well/Quantum Dot Structures
... spectral bandwidth devices. Based on this newly observed effect, we then report on the first hybrid QW/QD SLD, which is capable of emitting an emission bandwidth of 290 nm centered at 1200 nm with a corresponding output ...
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Bipolar Effects in Photovoltage of Metamorphic InAs/InGaAs/GaAs Quantum Dot Heterostructures: Characterization and Design Solutions for Light Sensitive Devices
... GaAs QD structures in the case of electrically active si-GaAs substrate. Both nanostructures manifest a bipolar PV caused by a competition of the components originated from the oppositely sloped band ...
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Measurement of the spin temperature of optically cooled nuclei and GaAs hyperfine constants in GaAs/AlGaAs quantum dots
... fully quantum de- scription of the QD electron-nuclear spin system, which is still ...existing quantum models [5, 12, 13, 16] employ significant simplifications ...
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Photo Ionization Cross Section and Binding Energy of Exciton in a Parabolic Quantum Well
... for a barrier heights corresponding to the Al composition x=0.3. The barrier heights of conduction band and valence band are calculated as 246.87 and 132.93 meV respectively. When L is increases, the binding energy also ...
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Optical and Mechanical Characterization of InAs/GaAs Quantum Dot Solar Cells
... of quantum confined material within a solar ...band. Quantum well structures would otherwise be useful for this concept except that the isolation requirement of the intermediate band can only be ...
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Approximate methods for the solution of quantum wires and dots : Connection rules between pyramidal, cuboidal, and cubic dots
... decreases, as expected, as the wire width increases, as a con- sequence of the inverse-of-the-well-width dependence of the one-dimensional unperturbed energies. The value of E is greater than the confining ...
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