GaAs quantum-well lasers
Linewidth enhancement factor and modulation bandwidth of lattice matched 1 5 micron InGaAsN/GaAs quantum well lasers
... single- quantum-well structures have been calculated using microscopic theory including many-body effects and a 10x10 effective-mass ...InGaNAs/GaAs quantum wells have a much lower linewidth ...
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Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1 3 μm Quantum Dot Lasers
... 1.3-μm quantum dot (QD) laser was de- veloped; however, there has been no distinct development or progress on quantum dot growth since then up till ...1.3-μm quantum dot laser has once again become a ...
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Ultrasmall microdisk and microring lasers based on InAs/InGaAs/GaAs quantum dots
... Microrings and microdisks with a semiconductor AlGaAs pedestal were fabricated. The active region of the lasers was based on InAs/InGaAs/GaAs quantum dots emitting near 1.3 μm with high confinement ...
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Optically pumped intersublevel midinfrared lasers based on InAs-GaAs quantum dots
... Bragg stack. A practical difficulty with this approach is that the total width of semiconductor layers is about 100 m, which makes it somewhat impractical for the whole structure to be grown by the slow molecular beam ...
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Energy Levels of InGaAs/GaAs Quantum Dot Lasers with Different Sizes
... In this paper, we have studied the strain, band-edge, and energy levels of cubic InGaAs quantum dots (QDs) surrounded by GaAs. It is shown that overall strain value is larger in InGaAs-GaAs ...
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Temperature-dependent modulated reflectance of InAs/InGaAs/GaAs quantum dots-in-a-well infrared photodetectors
... atomic-like quantum confinement, self-assembled semiconductor quantum dots (QDs) are par- ticularly attractive from a fundamental research perspective and also for their industrial applications in ...
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Thermal Effects and Small Signal Modulation of 1 3 μm InAs/GaAs Self Assembled Quantum Dot Lasers
... We investigate the influence of thermal effects on the high-speed performance of 1.3-μm InAs/GaAs quantum-dot lasers in a wide temperature range (5–50°C). Ridge waveguide devices with 1.1 mm cavity ...
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Crystallographic Orientation-dependent Optical Properties of InGaSb/GaAs Quantum Well Architecture
... A quantum well (QWs), literally a potential well with only discrete energy values, comprised of Gallium Arsenide (GaAs) and of related III-V materials exhibits appreciable current conducting ...
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Observation of the transition from lasing driven by a bosonic to a fermionic reservoir in a GaAs quantum well microcavity
... The effect of the in-plane electric field on PL is illustrated in Fig. 3(c) which shows line spectra at 𝑘 ∥ = 0 for increasing bias at a constant excitation power of 21.4mW when polariton and photon lasers are ...
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Excitation energy dependent nature of Raman scattering spectrum in GaInNAs/GaAs quantum well structures
... measurements with different excitation sources have revealed that the excitation energy is the decisive mechanism on the nature of the Raman scattering spectrum. When the excitation energy is close to the electronic band ...
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Temperature and electron density dependence of spin relaxation in GaAs/AlGaAs quantum well
... intrinsic GaAs QW [22] and bulk CdTe crystal [23,24] at room ...bulk GaAs has also observed a peak in spin-dephasing times [25], and this peak has been attributed to the influence of electron screening and ...
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MBE grown GaAsBi/GaAs multiple quantum well structures : structural and optical characterization
... multiple quantum well p–i–n diodes were grown by molecular beam ...multiple quantum well regions with clearly de fi ned well periodicities were ...63 well diodes. Calculations of ...
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Optical Gain and Confinement in Gaas/Algaas Structure Quantum Well Lasers
... a quantum well structure, the two dimensional nature of the density of states changes the gain ...a quantum well is constant in the whole ...as well, causing a considerable ...
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Stimulated Emission in AlxGa1-xAs -GaAs Single and Multiple Quantum Well Heterostructure.
... the quantum-well system and the process of the interaction between the hot electrons and the phonons are studied by the stimulated emission from the ...the quantum-well ...the quantum ...
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Anisotropic in plane spin splitting in an asymmetric (001) GaAs/AlGaAs quantum well
... We observed the anisotropic in-plane spin splitting of the conduction-band electron in an asymmetric (001) GaAs/ AlGaAs quantum well using TRKR technique with applied magnetic fields. It is confirmed ...
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Self-consistent solutions to the intersubband rate equations in quantum cascade lasers: Analysis of a GaAs/AlxGa1-xAs device
... cascade lasers have been the focus of much research since they were developed in ...a GaAs/AlGaAs structure, which is a material more commonly used in com- pound ...operational quantum cas- cade ...
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Electron Microscopy Studies of Non Local Effects' Impact on Cathodoluminescence of Semiconductor Laser Structures
... One of the CL spectra in Fig. 3(c) was measured in short- circuit conditions in an external circuit. It reveals that no CL signal is measured for wavelengths related to the excitation in a quantum well. ...
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The Capacitance Modulated by the Convolution between Optical and Electrical Signals Using the GaAsN/GaAs Quantum Well
... 0.02 Hz), which is easier to measure. A complicated and expensive lock-in amplitude system is not required to achieve this function. A device with light responsive conductance, such as a GaAsN/GaAs QW is ...
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A THEORETICAL EVALUATION OF VARIATION OF BINDING ENERGY OF THE GROUND STATE FOR A DONOR IN QUANTUM WELL IN THE PRESENCE OF TITLED MAGNETIC FIELD
... square well potential under the influence of externally applied titled magnetic field is obtained by using a variational ...of GaAs quantum well were studied as a function of the well ...
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Experimental verification of the very strong coupling regime in a GaAs quantum well microcavity
... expectation value. The ratio / is then used as a variational parameter to find the polariton energies. As a result, LP and UP are characterized by different with . can significantly exceed due to photon-mediated mixing ...
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