GaAs quantum wells
Circularly polarized lasing in chiral modulated semiconductor microcavity with GaAs quantum wells
... We report the elliptically, close to circularly polarized lasing at ~ ω = 1.473 and 1.522 eV from an AlAs/AlGaAs Bragg microcavity with 12 GaAs quantum wells in the active region and chiral-etched ...
5
Nonlinear dynamics of non equilibrium holes in p type modulation doped GaInNAs/GaAs quantum wells
... Nonlinear charge transport parallel to the layers of p -modulation-doped GaInNAs/GaAs quantum wells (QWs) is studied both theoretically and experimentally. Experimental results show that at low ...
5
Molecular beam epitaxy and properties of GaAsBi/GaAs quantum wells grown by molecular beam epitaxy: effect of thermal annealing
... on GaAs attract more and more attention because of their peculiar electronic ...to GaAs efficiently decreases the gap energy of this semiconductor [1] through a change in its valence band properties and ...
5
Exciton localization and structural disorder of GaAs1−xBix/GaAs quantum wells grown by molecular beam epitaxy on (311)B GaAs substrates
... in GaAs results in important changes of its physical properties such as significant band gap energy reduction (about 88 meV / Bi % 1,3-5 ) and increase of the spin-orbit band ...in GaAs, the energy levels ...
14
Observation of hybrid Tamm plasmon exciton polaritons with GaAs quantum wells and a MoSe2 monolayer
... towards combining the unique physics inherent to two- dimensional materials with the well matured device platform in III–V optoelectronics and polaritonics. We demonstrate that both types of excitations enter the strong ...
6
An analysis of Hall mobility in as grown and annealed n and p type modulation doped GaInNAs/GaAs quantum wells
... lowest value which is an indication of transport that takes place in GaAs barrier layer. Results also indicated that alloy scattering and interface scattering are dominant mechan- isms that explain the behavior of ...
6
Linewidth enhancement factor and modulation bandwidth of lattice matched 1 5 micron InGaAsN/GaAs quantum well lasers
... single- quantum-well structures have been calculated using microscopic theory including many-body effects and a 10x10 effective-mass ...InGaNAs/GaAs quantum wells have a much lower linewidth ...
9
Optical and spin properties of localized and free excitons in GaBi ₓAs₁-ₓ /GaAs multiple quantum wells
... III- V dilute bismide semiconductor material has attracted much attention in recent years due to its potential applications for near infrared wavelength photonics and spintronics [1-20]. The incorporation of Bi has been ...
21
Acoustic phonon generation and detection in GaAs/Al0 3Ga0 7As quantum wells with picosecond laser pulses
... a GaAs 共 100 兲 substrate using MOVPE 共 metallor- ganic vapor phase epitaxy 兲 ...buried GaAs quantum wells of different thickness were incorporated in order to exploit their different excitonic ...
13
Room temperature spin diffusion in (110) GaAs/AlGaAs quantum wells
... (110) GaAs quantum wells at room ...in GaAs(110) quantum ...(110) GaAs quantum wells: Anisotropy and intersubband ...
7
Decoherence and Entanglement Simulation in a Model of Quantum Neural Network Based on Quantum Dots
... artificial quantum neural network – the quantum dots. Quantum dots (QD) are small conductive regions of semiconductor heterostructures (typically less than hundred nanometers) that contain a precisely ...
6
Ultra High Purity Gallium and Indium for Emerging Iii-V Epitaxial Nanoelectronics Materials Technologies: An Overview
... In MOVPE, a major replacement effort for the highly toxic As- and P- sources and perfection of safety issues has been underway for some time, but hydride sources remain dominant due to cost considerations. Oxygen ...
16
Low Temperature Photoluminescence Measurement of Extremely Thin InGaAs/GaAs Multi Quantum Wells Grown by Molecular Beam Epitaxy
... the quantum well and the In composition of the quantum well layer was obtained from the rocking curve ...multi quantum wells, photoluminescence, HRXRD, AFM, Dark ...
9
Measurement of the spin temperature of optically cooled nuclei and GaAs hyperfine constants in GaAs/AlGaAs quantum dots
... fully quantum de- scription of the QD electron-nuclear spin system, which is still ...existing quantum models [5, 12, 13, 16] employ significant simplifications ...
8
Bipolar Effects in Photovoltage of Metamorphic InAs/InGaAs/GaAs Quantum Dot Heterostructures: Characterization and Design Solutions for Light Sensitive Devices
... -GaAs/substrate interface is opposite to that in the rest of the MBE-grown structure (see the Fig. 3). Hence, the excitation in the n + -GaAs layer and substrate (above 1.36 eV) gives an opposite PV signal ...
9
Thermal dissociation of free and acceptor-bound positive trions from magnetophotoluminescence studies of high quality GaAs/AlxGa1-xAs quantum wells
... Trions (or ,,charged excitons”) predicted by Lam- pert in 1958 [1] have not been unambiguously iden- tified in bulk materials, mainly because of the small binding energy of the additional electron or hole to the neutral ...
10
Quantum interference effects in p Si1−xGex quantum wells
... WL and EEI effects Weak localisation effects reveal themselves as an increas- ing resistance as temperature is lowered (T < 2 K for Sample II and T < 20 K for Samples III and IV), a negative magneto-resistance (MR) ...
5
Transport anisotropy in Ge quantum wells in the absence of quantum oscillations
... One important question is whether the surface roughness can also result in huge anisotropy in our Ge quantum wells in tilted B . First, B -induced anisotropy is known to be temperature independent [7,9], ...
6
Optical and Mechanical Characterization of InAs/GaAs Quantum Dot Solar Cells
... of quantum confined material within a solar ...band. Quantum well structures would otherwise be useful for this concept except that the isolation requirement of the intermediate band can only be ideally ...
162
Low-frequency noise properties of beryllium δ-doped GaAs/AlAs quantum wells near the Mott transition
... the quantum well width, barrier height, impurity position, and ...or quantum wells—in this case, the nature of the impurity states may change drastically, with strongly interacting impurities forming ...
8