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GaAs semiconductor quantum well

Electron Microscopy Studies of Non Local Effects' Impact on Cathodoluminescence of Semiconductor Laser Structures

Electron Microscopy Studies of Non Local Effects' Impact on Cathodoluminescence of Semiconductor Laser Structures

... Spatially and spectrally resolved cathodoluminescence (CL) studies performed in a scanning electron microscope (SEM) or a scanning transmission electron microscope (STEM) are widely applied to determine the luminescence ...

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Ultrashort electromagnetic pulse control of intersubband quantum well transitions

Ultrashort electromagnetic pulse control of intersubband quantum well transitions

... of semiconductor quantum ...ductor quantum well with electromagnetic pulses with a duration of few cycles and even a single ...double GaAs/AlGaAs quantum well structure, ...

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Ultrafast dynamics in InAs quantum dot and GaInNAs quantum well semiconductor heterostructures

Ultrafast dynamics in InAs quantum dot and GaInNAs quantum well semiconductor heterostructures

... novel quantum confined material systems (quantum wells and more recently quantum dots) for device ap- ...and semiconductor optical amplifiers ...mode-locked semiconductor lasers, which ...

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Circularly polarized lasing in chiral modulated semiconductor microcavity with GaAs quantum wells

Circularly polarized lasing in chiral modulated semiconductor microcavity with GaAs quantum wells

... Figure 2 shows that the measured emission in the las- ing mode shows as well a pronounced linear polarization along x direction in Fig. 1c, i.e., along the (110) crystallo- graphic direction of the AlGaAs and ...

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Anisotropic in plane spin splitting in an asymmetric (001) GaAs/AlGaAs quantum well

Anisotropic in plane spin splitting in an asymmetric (001) GaAs/AlGaAs quantum well

... The properties of spins in semiconductor materials have attracted much more attentions since the invention of spintronics and spin-based quantum information [1-3]. In those fields, the spin-orbit coupling ...

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Stimulated Emission in AlxGa1-xAs -GaAs Single and 
Multiple Quantum Well Heterostructure.

Stimulated Emission in AlxGa1-xAs -GaAs Single and Multiple Quantum Well Heterostructure.

... extrinsic semiconductor properties and is shown to be particularly suitable for the centres responsible for the shallow donor and acceptor species by which the electrical properties are usually ...

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Transverse magnetic focussing of heavy holes in a (100) GaAs quantum well

Transverse magnetic focussing of heavy holes in a (100) GaAs quantum well

... The control of the electron ’ s spin degree of freedom is central to the development of spin-based electronics, as well for spin- based quantum computation [ 1 – 3 ] . Key to both of these fi elds is the ...

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Optical Gain and Confinement in Gaas/Algaas Structure Quantum Well Lasers

Optical Gain and Confinement in Gaas/Algaas Structure Quantum Well Lasers

... on semiconductor quantum well (QW) structures due to the virtue of their novel electronic optical ...in quantum well and partly because of greater population inversion at a given ...

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Excitation energy dependent nature of Raman scattering spectrum in GaInNAs/GaAs quantum well structures

Excitation energy dependent nature of Raman scattering spectrum in GaInNAs/GaAs quantum well structures

... corresponds to transverse (268 cm − 1 ) and longitudinal optic phonons (291 cm −1 ) and does not exhibit any change with an increasing N amount or the type of sam- ples. Therefore, it is obvious that they are related to ...

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Experimental verification of the very strong coupling regime in a GaAs quantum well microcavity

Experimental verification of the very strong coupling regime in a GaAs quantum well microcavity

... In semiconductor microcavities with embedded quantum wells, the strength of light-matter coupling critically depends on the system parameters and has a strong impact on the physical ...and quantum ...

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Observation of the transition from lasing driven by a bosonic to a fermionic reservoir in a GaAs quantum well microcavity

Observation of the transition from lasing driven by a bosonic to a fermionic reservoir in a GaAs quantum well microcavity

... To exclude the contribution of a photo-induced voltage due to illumination of the Schottky-contacts, we have recorded current-voltage characteristics at different excitation powers that are plotted in Fig. 3(a). To allow ...

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A study of photomodulated reflectance on staircase like, n doped GaAs/Alx
              Ga1−xAs quantum well structures

A study of photomodulated reflectance on staircase like, n doped GaAs/Alx Ga1−xAs quantum well structures

... The importance of the photomodulated reflectance spec- troscopy in complicated semiconductor QW structures and hence in QWIPs has been verified by the experi- mental and the theoretical results obtained from this ...

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Temperature-dependent modulated reflectance of InAs/InGaAs/GaAs quantum dots-in-a-well infrared photodetectors

Temperature-dependent modulated reflectance of InAs/InGaAs/GaAs quantum dots-in-a-well infrared photodetectors

... atomic-like quantum confinement, self-assembled semiconductor quantum dots (QDs) are par- ticularly attractive from a fundamental research perspective and also for their industrial applications in ...

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Temperature and electron density dependence of spin relaxation in GaAs/AlGaAs quantum well

Temperature and electron density dependence of spin relaxation in GaAs/AlGaAs quantum well

... group semiconductor heterostructures, has been studied extensively both theoretically and experimentally ...as well as hyperfine inter- actions, have been well established to describe spin relaxation ...

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The Capacitance Modulated by the Convolution between Optical and Electrical Signals Using the GaAsN/GaAs Quantum Well

The Capacitance Modulated by the Convolution between Optical and Electrical Signals Using the GaAsN/GaAs Quantum Well

... Jia-Feng Wang was born in Kaohsiung, Taiwan in 1984. He received his M. S. degree from National Changhua Education University, Changhua, Taiwan in 2008. He is pursuing PhD in National Chiao Tung University, Hsinchu, ...

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Optical and Mechanical Characterization of InAs/GaAs Quantum Dot Solar Cells

Optical and Mechanical Characterization of InAs/GaAs Quantum Dot Solar Cells

... a semiconductor bandgap show promise in this ...InAs quantum dot (QD) nanostructures embedded in a GaAs p-i-n solar cell device to investigate the effects of these unique ...as well as many ...

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A THEORETICAL EVALUATION OF VARIATION OF BINDING ENERGY OF THE GROUND STATE FOR A DONOR IN QUANTUM WELL IN THE PRESENCE OF TITLED MAGNETIC FIELD

A THEORETICAL EVALUATION OF VARIATION OF BINDING ENERGY OF THE GROUND STATE FOR A DONOR IN QUANTUM WELL IN THE PRESENCE OF TITLED MAGNETIC FIELD

... dimensional semiconductor hetrostructure. These includes quantum wells 1-4 , quantum wires 5-8 and quantum dots 9-12 ...of semiconductor multilayer quasi-two dimensional systems as ...

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Dilute magnetic semiconductor quantum-well structures for 
magnetic field tunable far-infrared/terahertz absorption

Dilute magnetic semiconductor quantum-well structures for magnetic field tunable far-infrared/terahertz absorption

... pare quantum-well structures based upon these materials, op- erating as photodetectors, against bolometers, the latter has a very high responsivity at a few kelvin and does not require an external magnetic ...

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Observation of microwave induced resistance oscillations in a high mobility two dimensional hole gas in a strained Ge/SiGe quantum well

Observation of microwave induced resistance oscillations in a high mobility two dimensional hole gas in a strained Ge/SiGe quantum well

... While MIRO have been actively investigated for more than a decade [1], their observation has remained unique to n-type GaAs/AlGaAs. Indeed, experiments on microwave photoresis- tance in p-type GaAs/AlGaAs ...

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Decoherence and Entanglement Simulation in a Model of Quantum Neural Network Based on Quantum Dots

Decoherence and Entanglement Simulation in a Model of Quantum Neural Network Based on Quantum Dots

... a quantum neural network based on quantum dots using numerical method of path integral ...the quantum neural network using an array of single-electron quantum dots with dipole-dipole ...

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