GaN/InGaN/GaN
Facet recovery and light emission from GaN/InGaN/GaN core-shell structures grown by metal organic vapour phase epitaxy on etched GaN nanorod arrays
... characterise the optical properties of the GaN/InGaN/GaN core-shell structures, shown in Figure 12(b). This technique measures the full emission spectrum from successive local- ised regions ...
11
Optical properties and resonant cavity modes in axial InGaN/GaN nanotube microcavities
... individual InGaN/GaN nanotube [white dashed line in ...The GaN near-band-edge (NBE) emission around ...the InGaN SQW emission extracted for various nanotubes are presented in ...The ...
12
Fabrication of vertical GaN/InGaN heterostructure nanowires using Ni Au bi metal catalysts
... the GaN/InGaN COHN can be tuned for the entire visible light wavelength ...the InGaN shells [13]. The InGaN shell in the COHN is also helpful in achieving efficient radiative recombination of ...
6
Luminescence studies on green emitting InGaN/GaN MQWs implanted with nitrogen
... As-grown sample. Figure 1 (a) shows the RT PL and PLE spectra at RT and the visual appearance (in inset) of the as-grown InGaN/GaN MQW sample under He-Cd excitation at 14 K. The green band (GB) emission ...
6
Recombination Pathways in Green InGaN/GaN Multiple Quantum Wells
... In summary, temperature-dependent SSPL and TRPL spectra were studied for the green emission from InGaN/GaN MQW LED structure. S-shaped behavior of the SSPL peak position with increasing temperature was ...
6
Blue light emission from the heterostructured ZnO/InGaN/GaN
... Figure 4 illustrates the possibility of white light from the ZnO/InGaN/GaN heterostructured LEDs by the Commission International de l'Eclairage (CIE) x and y chromaticity diagram. Point D is the equality ...
5
Quantum well engineering in InGaN/GaN core-shell nanorod structures
... ing InGaN by metal organic vapour phase epitaxy (MOVPE), the InN content can be controlled by means of the temperature in the ...of InGaN/GaN core-shell nanorods grown at varying temperatures and ...
7
Substrate Free InGaN/GaN Nanowire Light Emitting Diodes
... encapsulated into PDMS layer. After metal deposition to p-GaN, a thick PDMS cap layer was spin-coated and the membrane was manually peeled from the sapphire substrate, flipped upside down onto a steel holder, and ...
6
InGaN/GaN multilayer quantum dots yellow green light emitting diode with optimized GaN barriers
... 10-layer InGaN/GaN QDs as the active region was grown, which was labeled as sample ...the GaN barrier, only the In precursor was shut off, while the same fluxes as in the growth of InGaN QDs ...
8
The effect of free standing GaN substrate on carrier localization in ultraviolet InGaN light emitting diodes
... for InGaN-based UV-LED de- vices to develop fully their ...the InGaN-based UV-LEDs were grown on sapphire substrate by hetero-epitaxial techniques, such as metal-organic chemical vapor deposition ...of ...
7
Analysis of defect-related inhomogeneous electroluminescence in InGaN/GaN QW LEDs
... ) GaN template on sapphire with a 2 µm layer of undoped GaN followed by a 3 µm layer of silicon-doped GaN, a 5 period InGaN/GaN multiple quantum well (MQW) region (well width = ...doped ...
9
Fabrication of InGaN/GaN MQWs Vertical Blue Light-Emitting Diodes Using Laser Lift-Off Technique
... of InGaN QW and GaN barrier were ~ 3 nm and 10 nm ...in InGaN QW and thickness were optimized to obtain the dominant wavelength ~ 460 ...vertical GaN blue LED, first a metal layer composed of ...
5
Optical properties of GaN nanorods containing a single or multiple InGaN quantum wells
... from GaN nanorods of diameter between 80 and 350 nm, containing either a three-well multiple InGaN quantum well or a single quantum well, have been performed by photoluminescence (PL) and ...
5
Analysis of the stability of InGaN/GaN multiquantum wells against ion beam intermixing
... conventional InGaN/GaN nanostructures under more adaptable conditions for industrial scalability, ...in InGaN/GaN MQWs with 35 keV N + ions, comparing the behavior with ...
17
Optical and Structural Characterization of InGaN/GaN Multiple Quantum Wells by Epitaxial Lateral Overgrowth
... of InGaN/GaN MQWs. For this purpose, a GaN template grown by the ELO is desirable because it has a designed distribution in the dislocation ...
6
Observation of V Defects in Multiple InGaN/GaN Quantum Well Layers
... horizontal InGaN QWs, successively decreasing the number of the sidewall stripes with increasing height of the V, and the apical angle of the V-shape (see ...
5
Surface Morphology Evolution Mechanisms of InGaN/GaN Multiple Quantum Wells with Mixture N2/H2 Grown GaN Barrier
... It is obvious that the evolution trend of RMS surface roughness is highly consistent with that of pits size, which may relate to the growth mode affected by the formed pits. Once the pits are formed, indium atoms will ...
8
InGaN/GaN quantum wells grown on polar and nonpolar GaN substrates
... between GaN and sapphire, the main substrate for commercial LEDs, is 13% ...emissions, InGaN QWs’ immunity to the structural defects drew much research attention in the last ...in InGaN layers. Phase ...
116
Preparation of a Periodic Polystyrene Nanosphere Array Using the Dip Drop Method with Post deposition Etching and Its Application of Improving Light Extraction Efficiency of InGaN/GaN LEDs
... of InGaN/GaN blue LED are difficult to obtain through experimental ...for InGaN/GaN blue LEDs without and with the PS NS array window layers with various periods in the x and y di- ...
9
Influence of stress on optical transitions in GaN nanorods containing a single InGaN/GaN quantum disk
... homo-epitaxial GaN templates, the degree of strain relaxation in the overall structure will depend on the diameter and height of the nanorods, with complete strain relaxation occurring when their height exceeds ...
8