GaSb-GaAs
Atomic column scanning transmission electron microscopy analysis of misfit dislocations in GaSb/GaAs quantum dots
... including GaSb/Si 2D layers [29] or GaSb/GaAs 2D layers ...the GaAs substrate and not to a relaxed GaSb ...relaxed GaSb layer would show a strain value equal to the lattice ...
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Effect of an in situ thermal annealing on the structural properties of self assembled GaSb/GaAs quantum dots
... of GaSb/GaAs QDs has changed the morphology of the buried ...the GaAs substrate delimited by the threading dislocation has been found to be Sb-rich as well, although in a small amount in comparison ...
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Type II GaSb/GaAs Quantum Ring Intermediate Band Solar Cell
... type-II GaSb/GaAs quantum ring (QR) nanostructures, systematically studying their electrical and optical performance under different test ...conventional GaAs single junction solar ...
147
Open circuit voltage increase of GaSb/GaAs quantum ring solar cells under high hydrostatic pressure
... of GaSb/GaAs QR SC under hydrostatic pressure, where the transition energies increase with application of pressure without modifying the thermal distribution of the ...bulk GaAs, GaSb wetting ...
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Type II GaSb/GaAs quantum rings with extended photoresponse for efficient solar cells
... of GaSb/GaAs QDs difficult, leading to the formation of relaxed QDs containing defects and to the generation of dislocations due to the build-up of internal ...grow GaSb QRs rather than QDs 12 ...
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Characterization of 6 1 Å III V materials grown on GaAs and Si: a comparison of GaSb/GaAs epitaxy and GaSb/AlSb/Si epitaxy
... and dark current measurements, GaSb p-i-n structures grown on GaAs and Si substrates using IMF.. arrays were compared with an equivalent structure grown lattice matched on native GaSb..[r] ...
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Properties of Doped GaSb Whiskers at Low Temperatures
... The GaSb epitaxial layers, or quantum dots grown on lattice-matched, semi-insulating substrates, are used in high-speed devices due to their advantages such as low density of dislocations and defects [3, ...Hence, ...
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Structural Analysis of Highly Relaxed GaSb Grown on GaAs Substrates with Periodic Interfacial Array of 90° Misfit Dislocations
... the GaSb/GaAs interface along [1-10] using cross-sectional transmission electron micrograph (XTEM) and to calculate the TD density using KOH etching as shown in ...bulk GaSb deposited on GaAs ...
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Novel structures for lattice mismatched infrared photodetectors
... on GaSb/GaAs and GaSb/AlSb/Si mis- matched ...(on GaSb) was also grown for ...on GaSb) by factors of ~15 and ~80, for the GaSb/GaAs case and for the GaSb/Si case, ...
163
Silicon based single quantum dot emission in the telecoms C‑band
... Figure 5 shows spectra for an excitation range of 0.4 to 300 µW (≡ 6 to 4500 Wcm -2 ) for a pillar fabricated from the GaAs substrate sample. This sample was chosen for detailed study as the higher PL efficiency ...
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Porosity in Group IV-IV and III-V Alloys Induced by Ion Irradiation in the Nuclear Stopping Regime
... Chapter 7: Void Evolution and Porosity in GaSb/ GaAs1-xSbx Alloys 181 Figure 7.2a, b shows the thickness and the step height of the voided layer in the GaAs 0.25 Sb 0.75 alloy as a funct[r] ...
223
GaSb based solar cells for multi junction integration on Si substrates
... lattice-matched GaSb control solar cells were grown by MBE in a VARIAN GEN II ...the GaSb (001) – (2x5) to (1x3) change of reconstruction ...nm GaSb buffer ...The GaSb growth rate, set by the ...
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Submonolayer InGaAs/GaAs quantum dot solar cells
... Submonolayer (SML) QDs are grown by depositing strained InAs with less than one monolayer coverage on the GaAs matrix. They have emerged as an alternative low-dimensional nanostruc- ture to the conventional ...
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Growth and fabrication of InAs/GaSb type II superlattice mid wavelength infrared photodetectors
... than GaSb, and proper interface layers, in typical InSb, have to be inserted between the InAs and GaSb layers for strain balance and (2) interface control is extremely important to obtain high-quality ...
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A study of GaSB-based resonant cavity photodetectors
... The usual convention for IR detectors is to speak o f a black-body responsivity, R[T, f] and a spectral responsivity, R(A,, f], where the former represents tlie o[r] ...
231
Materials integration for high-performance photovoltaics by wafer bonding
... spectrum splitting solar design, the quantum well solar cell, seeks, through the use of quantum well structures, to collect sub-bandgap photons by creating a structure that has engineered separations of energy states in ...
303
Evolution of morphology and microstructure of GaAs/GaSb nanowire heterostructures
... that GaAs NW should have a tapering shape, and this tapering morphology can also be verified by the TEM image of Figure 2a, ...top GaSb nanoplate (see Figure 5e). Besides, ex- cept for the GaSb shell ...
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Rolled Up Nanotech: Illumination Controlled Hydrofluoric Acid Etching of AlAs Sacrificial Layers
... Abstract The effect of illumination on the hydrofluoric acid etching of AlAs sacrificial layers with systematically varied thicknesses in order to release and roll up InGaAs/ GaAs bilayers was studied. For ...
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N incorporation and associated localized vibrational modes in GaSb
... Based on the band gaps of GaAs and GaN (1.5 and 3.4 eV, respectively) and Vegard’s law, one would expect the band gap to increase, not decrease, as N is added to GaAs. To understand this unusual effect, ...
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Electroreflectance of GaSb from 0 6 to 26 eV
... Schottky barrier electroreflectance spectra are reported for GaSb from 0.6 to 26 eV. Accurate energies are determined for a number of critical points between the sp3 and Ga−3d valence bands and the conduction ...
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