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Graphene field-effect transistors

Terahertz Frequency Comb in Graphene Field-Effect Transistors

Terahertz Frequency Comb in Graphene Field-Effect Transistors

... Graphene Field-effect transistors (GFETs) are excellent candidates for all- electric, low-power radiation sources and detectors based on integrated circuit ...

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Uniformly Nanopatterned Graphene Field Effect Transistors with Enhanced Properties

Uniformly Nanopatterned Graphene Field Effect Transistors with Enhanced Properties

... a graphene nano- structure that can open up a bandgap in a large sheet of single-layer graphene ...patterned graphene is prepared by self-assembled mask lithography using a floating AAO that can be ...

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Effects of Energy Relaxation via Quantum Coupling Among Three Dimensional Motion on the Tunneling Current of Graphene Field Effect Transistors

Effects of Energy Relaxation via Quantum Coupling Among Three Dimensional Motion on the Tunneling Current of Graphene Field Effect Transistors

... The parabolic band effective mass theory is used to investigate the quantum feature of electrons in the in- version layer of metal-oxide-semiconductor field-effect transistors (MOSFETs), quantum ...

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Chemical Vapour Deposition Graphene Field-Effect Transistors for Detection of Human Chorionic Gonadotropin Cancer Risk Biomarker

Chemical Vapour Deposition Graphene Field-Effect Transistors for Detection of Human Chorionic Gonadotropin Cancer Risk Biomarker

... levels of hCG antigen demonstrated the limit of detection of the GFET sensors to be below 1 pg/mL 17.. using four-probe electrical measurements.[r] ...

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Investigation of electronic properties of graphene/Si field effect transistor

Investigation of electronic properties of graphene/Si field effect transistor

... date, graphene-based electronics, including graphene field-effect transistors (GFETs) [5,6], nanoelectromechanical systems [7], mo- lecular sensors [8], graphene-based ...

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Influence of post annealing on the off current of MoS2 field effect transistors

Influence of post annealing on the off current of MoS2 field effect transistors

... crease of the off current. Under vacuum conditions, the off current actually decreased by average 10 2 level and this change is elaborated in Additional file 1: Figure S3. Therefore, it is guessed that adsorption was ...

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Analytical modeling of uniaxial strain effects on the performance of double gate graphene nanoribbon field effect transistors

Analytical modeling of uniaxial strain effects on the performance of double gate graphene nanoribbon field effect transistors

... The effect of strain on the electronic structure and transport properties of graphene sheets and its ribbons have been studied both theoretically [9-11] and experimentally ...of graphene on ...

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A Theoretical Description Of Graphene Based Transistors

A Theoretical Description Of Graphene Based Transistors

... nanotube field- effect transistor (CNTFET) refers to a field-effect transistor that utilizes a single carbon nanotube or an array of carbon nanotubes as the channel material instead of bulk ...

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I-V characteristics model for Carbon Nanotube Field Effect Transistors

I-V characteristics model for Carbon Nanotube Field Effect Transistors

... CNTs are cylindrical molecules formed from hexagonal structures of hybridized carbon atoms. They belong to the family of fullerenes, allotropic forms of carbon [10, 11]. CNTs are described as hollow cylinders arising ...

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Effect of ribbon width on electrical transport properties of graphene nanoribbons

Effect of ribbon width on electrical transport properties of graphene nanoribbons

... on graphene because of its superior electrical ...patterning graphene into a nanoribbon can open a bandgap that can be tuned by changing the ribbon width, imparting semiconducting ...the effect of ...

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Chemical and biological sensors based on defect-engineered graphene mesh field-effect transistors

Chemical and biological sensors based on defect-engineered graphene mesh field-effect transistors

... For graphene mesh pH sensors, this issue has been solved through a simple pro- cess of passivating the edge ...how graphene mesh edge defects can improve sensors’ sensitivity and response time and also ...

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Improved performance of InSe field effect transistors by channel encapsulation

Improved performance of InSe field effect transistors by channel encapsulation

... of graphene and other two-dimensional (2D) materials has raised expectations for a revolution in electronics and optoelectronics ...However, graphene has a zero band gap, which prevents its use in many ...

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Optimization of Lift Off Process in Electrode Patterning for Graphene based Field Effect Transistor

Optimization of Lift Off Process in Electrode Patterning for Graphene based Field Effect Transistor

... First graphene was successfully produced by mechanical exfoliation and electrically characterized by Andre Geim and Konstantin Novoselov at University of Manchester in ...then, graphene based field ...

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Nanoparticles of Cu2ZnSnS4 as performance enhancing additives for organic field-effect transistors

Nanoparticles of Cu2ZnSnS4 as performance enhancing additives for organic field-effect transistors

... organic field-effect transistors (OFETs), which utilise small molecules 1–3 or polymers 4–6 to achieve high charge carrier mobilities in excess of 40 cm 2 V 1 s 1 ...as graphene, 8,9 which acts as an ...

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High-performance, low-operating-voltage organic field-effect transistors with low pinch-off voltages

High-performance, low-operating-voltage organic field-effect transistors with low pinch-off voltages

... between the molecular layer and the dielectric, because of the strong electric field used to inject the charges. The drain current saturated when the charges in the accumulation channel around the drain electrode ...

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All-electric all-semiconductor spin field-effect transistors

All-electric all-semiconductor spin field-effect transistors

... present an all-electric and all-semiconductor spin field effect transistor, in which these obsta- cles are overcome by employing two quantum point contacts as spin injectors and detectors. Distinct ...

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Flexible Graphene Devices with an Embedded Back Gate

Flexible Graphene Devices with an Embedded Back Gate

... of graphene plotted against the applied strain at different gate ...of graphene is an in- creasing function of strain for all measured values of the gate ...of graphene to applied strain can be tuned ...

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Ambipolar Organic Field Effect Transistors Based on Indigo Derivatives

Ambipolar Organic Field Effect Transistors Based on Indigo Derivatives

... axis (Fig. 4(e)). This is obviously due to the I…I interaction; the HOMO is most seriously influenced because the HOMO spread to the iodine atoms considerably (Fig. 2). Since this interchain interaction is comparable to ...

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Tunnel Field Effect Transistors for Ultra Low Power Applications

Tunnel Field Effect Transistors for Ultra Low Power Applications

... achieving the drain current is 3.2x10 -6 . So, the proposed device is having the better performance compared to Structure Double Gate-n-TFET (DG n-TFET).The electron concentration in the TFET is high, so high leakage ...

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Low noise narrow band amplification with field effect transistors

Low noise narrow band amplification with field effect transistors

... The noise factor F is defined as the ratio of the total output noise power in the amplifier load to the noise power at the output due to the thermal noise of the source resistance... The[r] ...

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