III-V semiconductor
III-V semiconductor nanowire for solid oxide fuel cells
... of III-V semiconductor nanowire layer on GaAs substrate as an anode electrodes using metal organic chemical organic vapor deposition ...the III-V nanowires grow with less defect ...
6
Effects of ionizing radiation on nanomaterials and III-V semiconductor devices.
... by III-V devices or nanomaterials employed in ...of III-V semiconductor devices and epitaxially grown InAs quantum dots arrays are ...
170
Realization of III–V Semiconductor Periodic Nanostructures by Laser Direct Writing Technique
... In summary, 1D nanolines with the line width of 50 nm quarter of the optical diffraction limit were obtained on GSBT films, and 150 nm in line width on GaAs sub- strates, which are much smaller than the best results ...
10
High-Coherence Hybrid Si/III-V Semiconductor Lasers
... index III-V, thus causing a net redshift of the emission wavelength (blue and red traces), compared to the laser on the shallower etched die (purple ...
194
III V semiconductor waveguides for photonic functionality at 780 nm
... or about 4.6 dB cm -1 . Having an effective refractive index of 3.50 (±0.04), these guides had a maximum intrinsic finesse of 92 when high-reflection-coated at one end. This optical propagation loss included any ...
10
Emerging III-V Semiconductor Compound Materials for Future High-Speed and Low Power Applications: A Review and Challenges
... Group III–V compound semiconductors due to their exceptional electron transport and high mobility are very actively being researched as channel materials for future scaled CMOS ...both III–V ...
7
III V Semiconductor Nanostructures for Photoelectochemical Water Splitting
... The PEC tandem cell (Z scheme), consisting of photoactive- anode and cathode components with complementary energy band gaps, has been perceived to be an ideal and alternative approach for unassisted water splitting. A ...
164
Study of the effect of spin orbit interaction on band structures in III-V semiconductor compounds
... ZONE 1-INDUSTRIAL ZONES: According to the standards prescribed by the Noise Pollu- tion (Regulation and Control) Rules, 2000, the permissible limit of noise level (LA[r] ...
5
Design and Characterisation of III-V Semiconductor Nanowire Lasers
... sample III are slightly tapered and have irregular cross-section ...sample III is expected to be only slightly reduced as a result of the lower growth temper- ature ...
200
Ion scattering spectroscopy of III V semiconductor surfaces
... actually occurs in LEED. Generally, ab initio structural solution is not possible, and an iterative approach is required, starting from an assumed structure based on a kinematic approximation, which is modelled, compared ...
163
Surface Localization of Buried III–V Semiconductor Nanostructures
... 2e–g show the top surface morphology that results after capping the nanostructures with a 100-nm thick GaAs layer and posterior deposition of different amounts of InAs material.. Compari[r] ...
5
Thermodynamic Calculation of Phase Equilibria in As Fe In Ternary System Based on CALPHAD Approach
... The information on the phase equilibria is fundamental in the development of electronic devices.8–11 Especially, the isothermal section for metal/III-V semiconductor in low temperature r[r] ...
6
Real-time characterization of III-V compound semiconductor epitaxy: application to '6.1' materials
... Molecular beam epitaxy was first developed by Arthur [50]and Cho [51] for the growth of III-V semiconductor epitaxial layers. In contrast with other techniques, MBE is elegantly simply in concept. In ...
168
Optics at the Nanoscale: Light Emission in Plasmonic Nanocavities
... to III-V semiconductor core materials, we illustrated that active plasmonic core-shell nanowire resonators are a promising design for fast, bright, and directional on-chip light ...
144
III-V Compound Semiconductor Nanowire Terahertz Detectors
... of III-V nanowire synthesis, property manipulation and device fabrication over the last ten years has proven the potential of III-V semiconductor nanowires as nano-building blocks for ...
180
Frequency Noise Control of Heterogeneous Si/III V Lasers
... In Chapter 3, we demonstrated the reduction of frequency noise in our heterogeneous Si/III-V laser through modal engineering in the heterogeneous Si/III-V structure. Here, we investigate the ...
148
Study of brainstem auditory evoked potentials in early (grade I) essential hypertensive patients
... and V, Interpeak latency I-III, III-V and I-V, amplitude ratio V/I in essential hypertensive patients as compared to control ...
5
High performance III V MOSFET with nano stacked high k gate dielectric and 3D fin shaped structure
... various III-V materials [4,5], as well as realization of III-V MOSFETs ...Up-to-date III-V MOSFET technologies have demonstrated significant performance enhancement and have ...
5
Interference with a quantum dot single-photon source and a laser at telecom wavelength
... Embedding a QD in a vertical p-i-n diode 19 provides a useful tool to control the emission properties by application of an electric field across the dot layer. This control ranges from tunability of the emission ...
5
Semiconductor Nanofabrication via Metal-Assisted Chemical Etching: Ternary III-V Alloys and Alternative Catalysts
... the number of holes injected at the Au/semiconductor interface both increase with temperature. As injected holes diffuse from their injection sites at a higher rate with increasing temperature [51], the size of ...
272