InAs/GaAs quantum dots
Symmetry of k·p Hamiltonian in pyramidal InAs/GaAs quantum dots: Application to the calculation of electronic structure
... pyramidal InAs/GaAs quantum ...the quantum number of total quasi-angular momentum and giving the selection rules for interaction with electromagnetic ...self-assembled quantum ...
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Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1 3 μm Quantum Dot Lasers
... semiconductor quantum dot lasers have been improved with progress in active layer ...formed InAs quantum dots grown on GaAs had been intensively promoted in order to achieve ...
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Spatial regularity of InAs GaAs quantum dots : quantifying the dependence of lateral ordering on growth rate
... The lateral ordering of arrays of self-assembled InAs-GaAs quantum dots (QDs) has been quantified as a function of growth rate, using the Hopkins-Skellam index (HSI). Coherent QD arrays have a ...
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Temperature dependence of the photoluminescence of self assembled InAs/GaAs quantum dots in pulsed magnetic fields
... self-assembled InAs / GaAs quantum dots as a function of temperature 共 T 兲 ...by dots with a lower PL ...low-energy dots are larger in size only in the growth direction and not ...
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Growth parameters of InAs/GaAs quantum dots grown by MOVPE
... Quantum dots are zero dimensional structures and therefore have superior transport and optical properties compared to either 2-dimensional or 3-dimensional ...structures. Quantum dots show ...
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Temperature dependency of resonance fluorescence from InAs/GaAs quantum dots : dephasing mechanisms
... We report a study on temperature-dependent resonant fluorescence from InAs/GaAs quantum dots. We combined spectral and temporal measurements in order to identify sources of dephasing. In the ...
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Long wavelength room temperature luminescence from InAs/GaAs quantum dots with an optimized GaAsSbN capping layer
... An extensive study on molecular beam epitaxy growth conditions of quaternary GaAsSbN as a capping layer (CL) for InAs/GaAs quantum dots (QD) was carried out. In particular, CL thickness, ...
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Radiative Recombination Mechanisms of Large InAs/GaAs Quantum Dots
... large InAs/GaAs quantum dots were investigated by low-temperature photoluminescence as a function of the excitation-power ...by dots must be considered, and the usual equation I PL ...
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Ultrasmall microdisk and microring lasers based on InAs/InGaAs/GaAs quantum dots
... on InAs/InGaAs/GaAs quantum dots emitting around ...of quantum dots providing high confinement energy both for electrons and ...
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Optical and Mechanical Investigation of InAs /GaAs Quantum Dots Solar Cells and InAs Nanowires for the Application of Photovoltaic Device
... and quantum dots peaks (953 nm and 973 nm) under 0V bias shown in the Figure ...the GaAs band edge show a slight red shift with increasing reverse bias ...the GaAs band edge. The ...
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Optically pumped intersublevel midinfrared lasers based on InAs-GaAs quantum dots
... The dots considered here are in the strong confinement regime where the electron-electron interaction energy (which is of the order of 10 meV per electron pair [32]) is much smaller than the effective confinement ...
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Optical characterization of In flushed InAs/GaAs quantum dots emitting a broadband spectrum with multiple peaks at ~1 μm
... the GaAs layer and the capture of these carriers by QDs through InAs ...the InAs WL to the GS state through the ES states of the QD, as discussed in the next ...of InAs/GaAs QDs is ~1 ...
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Magnetophotoluminescence study of the influence of substrate orientation and growth interruption on the electronic properties of InAs/GaAs quantum dots
... the dots, such that the pho- toluminescence ( PL ) energy, the PL intensity, or the PL line- width can change according to the substrate ...the dots are also influenced by introducing a growth inter- ...
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Wetting layer evolution and its temperature dependence during self assembly of InAs/GaAs quantum dots
... main InAs distribution processes. The newly deposited InAs can be incorporated into the WL and QDs or re-evaporated through the indium desorption ...
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Investigation of Carrier Conduction Mechanism over InAs/InP Quantum Dashes and InAs/GaAs Quantum Dots Based p i n Laser Heterostructures
... SEM images of the long wavelength laser heterostructure in the p-i-n diode were presented in Figure 3, demonstrating good morphology. For the electrical cha- racteristics, the temperature dependent J-V measurement was ...
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Suppression of dislocations by Sb spray in the vicinity of InAs/GaAs quantum dots
... (100) GaAs substrates with a 200-nm-thick GaAs buffer ...with InAs/GaAs QDs capped by GaAs was named sample 1, and the other sam- ple with InAs/GaAs QDs spayed by Sb flux ...
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Influence of p-doping on the temperature dependence of In As/GaAs quantum dot excited state radiative lifetime
... p-doped InAs/GaAs quantum dots (QDs) is estimated from measurements of time-integrated and time-resolved luminescence from both ground and excited ...
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Temperature-dependent modulated reflectance of InAs/InGaAs/GaAs quantum dots-in-a-well infrared photodetectors
... atomic-like quantum confinement, self-assembled semiconductor quantum dots (QDs) are par- ticularly attractive from a fundamental research perspective and also for their industrial applications in ...
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Photoelectric Properties of InAs/GaAs Quantum Dot Photoconductive Antenna Wafers
... In conclusion, we presented a detailed study of the IR photoconductivity in self-assembled InAs/GaAs quantum dots. A compact semiconductor QD laser was used as a narrowband coherent pump ...
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Characterization and Effect of Thermal Annealing on InAs Quantum Dots Grown by Droplet Epitaxy on GaAs(111)A Substrates
... on GaAs(111)A surface along [ 21¯ 1] direction before In ...on GaAs (001) surface [3]. Unlike the case of GaAs(001), where surface is typically terminated with an excess of As, on GaAs(111)A ...
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