InGaAs-GaAs:B
Post-growth spectral tuning of InGaAs/GaAs quantum dot infrared photodetectors
... The argument of (1.12) shows the periodicity in the wavevector in these solutions. Therefore all higher values can be reduced into the first Brillouin zone, which is defined as −π/a ≤ k ≤ π/a . Actually, only half of ...
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Long nuclear spin polarization decay times controlled by optical pumping in individual quantum dots
... single InGaAs/ GaAs quantum dot in the regime of optically induced nuclear spin bistability in magnetic field of 1 – 3 ...single InGaAs dots at B ext 艋 ...
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Design and characterization of high optical quality InGaAs/GaAs/AlGaAs-based polariton microcavities
... FIG. 4. Angle-resolved photoluminescence spectrum of emission from sam- ple 4 with non-resonant excitation (a) and above threshold (b) showing fitted polariton dispersion (dashed) and deduced exciton- and ...
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Ultrasmall microdisk and microring lasers based on InAs/InGaAs/GaAs quantum dots
... 10. Maximov MV, Tsatsul ’ nikov AF, Volovik BV, Sizov DS, Shernyakov YM, Kaiander IN, Zhukov AE, Kovsh AR, Mikhrin SS, Ustinov VM, Alferov ZI, Heitz R, Shchukin VA, Ledentsov NN, Bimberg D, Musikhin YG, Neumann W: Tuning ...
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Energy Levels of InGaAs/GaAs Quantum Dot Lasers with Different Sizes
... Figure. 4 depicts the Γ and Heavy-Hole (HH) band-edges of each point of QDs with different sizes on x-z plane in the middle cross-section of the structure. As it is observed, both conduction and valence band-edges have ...
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Effect of detuning on the phonon induced dephasing of optically driven InGaAs/GaAs quantum dots
... the on-resonance experiments. 4 The pulse-area of Fig. 3(a) is scaled to match the model, which reproduces the data quite well. To aid the interpretation, the inset of Fig. 3(b) shows a calculation in the case of ...
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Dynamic nuclear polarization in InGaAs/GaAs and GaAs/AlGaAs quantum dots under nonresonant ultralow-power optical excitation
... IV B we present experimental results on DNP in InGaAs/GaAs QDs and discuss the mechanism of DNP via second-order recombination of dark ...in GaAs/AlGaAs dots are shown and the difference of ...
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Submonolayer InGaAs/GaAs quantum dot solar cells
... and GaAs reference cell. Compared to the GaAs reference cell, the additional spectral response at 960 nm is observed for both SML QDSC and ...the GaAs bandgap ( 10%) is comparable to the sub-bandgap ...
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InGaAs/GaAs Quantum Dot Solar Cells by Metal Organic Chemical Vapour Deposition
... QD layers could result in more strain and possible formation of defects in the quantum dots region which act as non-radiative recombination centres. Also, there is a chance to form strain-induced dislocations that ...
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Photoconductivity Relaxation Mechanisms of InGaAs/GaAs Quantum Dot Chain Structures
... of InGaAs/GaAs sample shown in ...the InGaAs coverage and ...the GaAs (001) ...of InGaAs QD chains (b) and QWR (a) in the GaAs ...the GaAs spacer layers were ...
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Exciton Dynamics in Stacked InGaAs/GaAs Quantum Rings Under Resonant Excitation
... [3,5,13,14]. It is worth noting that the temperature at which the tunneling effect begins (i.e., the process of carriers transfer between QR families begin), 10 K, is much smaller than that found for QR (T 40 K) in Ref. ...
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Single photon emission up to liquid nitrogen temperature from charged excitons confined in GaAs based epitaxial nanostructures
... The rapidly evolving field of secure quantum communi- cation, data transmission, and processing on the single pho- ton level requires utilization of the single photon source (SPS). 1–3 It has been proven that a ...
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Impact of phonon scattering in Si/GaAs/InGaAs nanowires and FinFets : a NEGF perspective
... Abstract This paper reviews our previous theoretical stud- ies and gives further insight into phonon scattering in 3D small nanotransistors using non-equilibrium Green function methodology. The focus is on very small ...
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Vol 8, No 6 (2019)
... The method of obtaining a crystal by pulling from the melt does not ensure the uniformity of the composition along the length of the crystal. The crystal has a characteristic gradient in the distribution of the original ...
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Cooperative Effects in the Photoluminescence of (In,Ga)As/GaAs Quantum Dot Chain Structures
... these InGaAs QDs are formed in chains along the [0-11] ...the GaAs spacer between adjacent QD layers was thick enough (approximately 60 MLs thick) to prevent any vertical QD ...
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Graphitic platform for self catalysed InAs nanowires growth by molecular beam epitaxy
... and InGaAs [4,5] grown by metal- organic chemical vapour deposition (MOCVD), GaAs [6] NWs grown by molecular beam epitaxy (MBE), ZnO NWs [7,8], as well as thin films such as GaN on graphite substrates via ...
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Linewidth enhancement factor and modulation bandwidth of lattice matched 1 5 micron InGaAsN/GaAs quantum well lasers
... of InGaAs/InP QW lasers is smaller than that of InGaNAs/GaAs QW lasers, but the values are much larger for the InGaNAs system as shown in ...for InGaAs resulting in a higher modulation current ...
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Quantum dot cascade laser
... using InGaAs/GaAs/InAs/InAlAs material system can realize controllable InAs QDs on tensile-strained InAlAs layers; second, the population inversion is achieved be- tween lower levels of coupled InAs QDs and ...
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Correlating Photoluminescence and Structural Properties of Uncapped and GaAs-Capped Epitaxial InGaAs Quantum Dots
... he dimensions of the major and minor axes at the height of 1 nm in GID data comes out to be 48 nm and 26.7 nm giving eccentricity of 0.83 and only at the height of 1.9 nm we get the values of major and minor axes as 37 ...
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Excitation Transfer in Vertically Stacked in (Ga)As/GaAs Quantum Rings
... semble (i.e., two different size families), being similar in each of the three stacked layers, in average. For the 1.5 nm spacer, the spectra are red shift with respect to the emission of sample with 4.5 nm spacer. This ...
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